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STD10NM65N

STMicroelectronics STD10NM65N

Part Number:
STD10NM65N
Manufacturer:
STMicroelectronics
Ventron No:
2484197-STD10NM65N
Description:
MOSFET N-CH 650V 9A DPAK
ECAD Model:
Datasheet:
STx10NM65N

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Specifications
STMicroelectronics STD10NM65N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD10NM65N.
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    MDmesh™ II
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    480mOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STD10
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    90W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    90W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    480m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    850pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    50 ns
  • Continuous Drain Current (ID)
    9A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    25V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain to Source Breakdown Voltage
    650V
  • Height
    2.4mm
  • Length
    6.6mm
  • Width
    6.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STD10NM65N Description
STD10NM65N belongs to the family of N-channel power MOSFETs that are manufactured by STMicroelectronics based on the generation 2 MDmesh? II technology. STD10NM65N features a verticle structure to provide the lowest on-resistance and gate charge among electronic components. Due to its specific characteristics, it is well suited for the most demanding high-frequency converters.

STD10NM65N Features
Low on-resistance 
Low gate charge
Verticle structure
Generation 2 MDmesh? II technology
Available in the DPAK package

STD10NM65N Applications
Switching applications
High-efficiency converters
STD10NM65N More Descriptions
N-channel 650 V, 0.43 Ohm, 9 A, DPAK second generation MDmesh(TM) Power MOSFET
N-Channel 650 V 0.48 Ohm Surface Mount MDmesh™ II Power MosFet - TO-252-3
Power Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 650V, 9A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.43ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
Product Comparison
The three parts on the right have similar specifications to STD10NM65N.
  • Image
    Part Number
    Manufacturer
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Pbfree Code
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Case Connection
    Drain to Source Voltage (Vdss)
    Pulsed Drain Current-Max (IDM)
    Lifecycle Status
    Factory Lead Time
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • STD10NM65N
    STD10NM65N
    STMicroelectronics
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    MDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    480mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    STD10
    3
    R-PSSO-G2
    1
    90W Tc
    Single
    ENHANCEMENT MODE
    90W
    12 ns
    N-Channel
    SWITCHING
    480m Ω @ 4.5A, 10V
    4V @ 250μA
    850pF @ 50V
    9A Tc
    25nC @ 10V
    8ns
    10V
    ±25V
    20 ns
    50 ns
    9A
    3V
    TO-252AA
    25V
    9A
    650V
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STD10PF06-1
    STD10PF06-1
    STMicroelectronics
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    SILICON
    175°C TJ
    Tube
    STripFET™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    200mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    -
    260
    30
    STD10
    3
    -
    1
    40W Tc
    Single
    ENHANCEMENT MODE
    40W
    20 ns
    P-Channel
    SWITCHING
    200m Ω @ 5A, 10V
    4V @ 250μA
    850pF @ 25V
    10A Tc
    21nC @ 10V
    40ns
    10V
    ±20V
    10 ns
    40 ns
    10A
    -
    -
    20V
    -
    -60V
    6.2mm
    6.6mm
    2.4mm
    -
    No
    ROHS3 Compliant
    Lead Free
    yes
    Tin (Sn)
    -60V
    -10A
    DRAIN
    60V
    40A
    -
    -
    -
    -
    STD10NM65N vs STD10PF06-1
  • STD15N65M5
    STD15N65M5
    STMicroelectronics
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    MDmesh™ V
    -
    Active
    1 (Unlimited)
    2
    EAR99
    340mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    -
    -
    STD15
    -
    R-PSSO-G2
    1
    85W Tc
    Single
    ENHANCEMENT MODE
    -
    30 ns
    N-Channel
    SWITCHING
    340m Ω @ 5.5A, 10V
    5V @ 250μA
    816pF @ 100V
    11A Tc
    22nC @ 10V
    8ns
    10V
    ±25V
    11 ns
    30 ns
    11A
    -
    -
    25V
    -
    -
    2.4mm
    6.6mm
    6.2mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    DRAIN
    650V
    44A
    ACTIVE (Last Updated: 7 months ago)
    17 Weeks
    650V
    160 mJ
    STD10NM65N vs STD15N65M5
  • STD1NK60-1
    STD1NK60-1
    STMicroelectronics
    Tin
    Surface Mount, Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    260
    30
    STD1NK
    3
    -
    1
    30W Tc
    Single
    ENHANCEMENT MODE
    30W
    6.5 ns
    N-Channel
    SWITCHING
    8.5 Ω @ 500mA, 10V
    3.7V @ 250μA
    156pF @ 25V
    1A Tc
    10nC @ 10V
    5ns
    10V
    ±30V
    25 ns
    19 ns
    1A
    3V
    -
    30V
    1A
    600V
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    4A
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    -
    25 mJ
    STD10NM65N vs STD1NK60-1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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