STMicroelectronics STD10NM60N

Name: STD10NM60N
Brand: STMicroelectronics
SKU: 3586160-STD10NM60N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD10NM60N

Manufacturer:: STMicroelectronics

Ventron No:: 3586160-STD10NM60N

Description:: MOSFET N-CH 600V 10A DPAK

ECAD Model:

Datasheet:: STD10NM60N

Part Pictures

Specifications

STMicroelectronics STD10NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD10NM60N.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
600mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD10
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
70W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
70W
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
550m Ω @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
540pF @ 50V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
8A
Drain to Source Breakdown Voltage
600V
Avalanche Energy Rating (Eas)
200 mJ
Nominal Vgs
3 V
Height
2.4mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD10NM60N Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.
STD10NM60N Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
STD10NM60N Applications Switching applications

STD10NM60N More Descriptions

N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in DPAK package
Trans MOSFET N-CH 600V 10A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 600V 10A DPAK
MOSFET, N CH, 600V, 8A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.53ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Di
Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Product Comparison

The three parts on the right have similar specifications to STD10NM60N.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Contact Plating

Number of Channels

Case Connection

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
STD10NM60N

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

16 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Cut Tape (CT)

MDmesh™ II

e3

Active

1 (Unlimited)

2

EAR99

600mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

STD10

3

R-PSSO-G2

1

70W Tc

Single

ENHANCEMENT MODE

70W

10 ns

N-Channel

SWITCHING

550m Ω @ 4A, 10V

4V @ 250μA

540pF @ 50V

10A Tc

19nC @ 10V

12ns

10V

±25V

15 ns

32 ns

10A

3V

25V

8A

600V

200 mJ

3 V

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
STD15P6F6AG

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, STripFET™ F6

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

STD15

-

-

-

35W Tc

-

-

-

-

P-Channel

-

160m Ω @ 5A, 10V

4V @ 250μA

340pF @ 48V

10A Tc

6.4nC @ 10V

-

10V

±20V

-

-

10A

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

60V

-

-

-

-

-

STD10NM60N vs STD15P6F6AG
STD10N60M2

STMicroelectronics

-

16 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

MDmesh™ II Plus

-

Active

1 (Unlimited)

2

EAR99

600mOhm

-

-

MOSFET (Metal Oxide)

GULL WING

-

-

STD10

-

R-PSSO-G2

1

85W Tc

Single

ENHANCEMENT MODE

-

8.8 ns

N-Channel

SWITCHING

600m Ω @ 3A, 10V

4V @ 250μA

400pF @ 100V

7.5A Tc

13.5nC @ 10V

8ns

10V

±25V

13.2 ns

32.5 ns

7.5A

-

25V

-

600V

-

-

2.4mm

6.6mm

6.2mm

-

No

ROHS3 Compliant

Lead Free

-

Tin

1

DRAIN

-

-

STD10NM60N vs STD10N60M2
STD15N65M5

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

17 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

MDmesh™ V

-

Active

1 (Unlimited)

2

EAR99

340mOhm

-

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

-

-

STD15

-

R-PSSO-G2

1

85W Tc

Single

ENHANCEMENT MODE

-

30 ns

N-Channel

SWITCHING

340m Ω @ 5.5A, 10V

5V @ 250μA

816pF @ 100V

11A Tc

22nC @ 10V

8ns

10V

±25V

11 ns

30 ns

11A

-

25V

-

-

160 mJ

-

2.4mm

6.6mm

6.2mm

-

No

ROHS3 Compliant

Lead Free

650V

-

-

DRAIN

44A

650V

STD10NM60N vs STD15N65M5