Comchip Technology SS8050-G
- Part Number:
- SS8050-G
- Manufacturer:
- Comchip Technology
- Ventron No:
- 3813367-SS8050-G
- Description:
- NPN TRANSISTOR 1.5A 40V SOT-23 R
- Datasheet:
- SS8050-G
Comchip Technology SS8050-G technical specifications, attributes, parameters and parts with similar specifications to Comchip Technology SS8050-G.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- ConfigurationSINGLE
- Power - Max300mW
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400mV
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage25V
- Transition Frequency100MHz
- Max Breakdown Voltage25V
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
SS8050-G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
SS8050-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 100MHz
SS8050-G Applications
There are a lot of Comchip Technology
SS8050-G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
SS8050-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 100MHz
SS8050-G Applications
There are a lot of Comchip Technology
SS8050-G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
SS8050-G More Descriptions
Trans GP BJT NPN 25V 1.5A 300mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
NPN Transistors 1.5A 40V SOT-23 R
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
NPN Transistors 1.5A 40V SOT-23 R
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