Fairchild/ON Semiconductor SS8050CTA
- Part Number:
- SS8050CTA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585290-SS8050CTA
- Description:
- TRANS NPN 25V 1.5A TO-92
- Datasheet:
- SS8050CTA
Fairchild/ON Semiconductor SS8050CTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SS8050CTA.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Current Rating1.5A
- Frequency100MHz
- Base Part NumberSS8050
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 80mA, 800mA
- Collector Emitter Breakdown Voltage25V
- Transition Frequency190MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)6V
- hFE Min85
- Height4.58mm
- Length4.58mm
- Width3.86mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SS8050CTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 190MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
SS8050CTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050CTA Applications
There are a lot of ON Semiconductor
SS8050CTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 190MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
SS8050CTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050CTA Applications
There are a lot of ON Semiconductor
SS8050CTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
SS8050CTA More Descriptions
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
SS8050 Series 25 V CE Breakdown 1.2 A NPN Epitaxial Silicon Transistor - TO-92
Bipolar Transistors - BJT NPN/25V/1.5A/120-200
25V 1W 1.5A 120@100mA1V 100MHz 500mV@800mA80mA NPN 150¡Í@(Tj) TO-92-3 Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 25V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 1W; DC Collector Current: 1.5A; DC Current Gain hFE: 120hFE; Tr
SS8050 Series 25 V CE Breakdown 1.2 A NPN Epitaxial Silicon Transistor - TO-92
Bipolar Transistors - BJT NPN/25V/1.5A/120-200
25V 1W 1.5A 120@100mA1V 100MHz 500mV@800mA80mA NPN 150¡Í@(Tj) TO-92-3 Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 25V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 1W; DC Collector Current: 1.5A; DC Current Gain hFE: 120hFE; Tr
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