Infineon Technologies SPD03N50C3

Name: SPD03N50C3
Brand: Infineon Technologies
SKU: 2482437-SPD03N50C3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SPD03N50C3

Manufacturer:: Infineon Technologies

Ventron No:: 2482437-SPD03N50C3

Description:: MOSFET N-CH 560V 3.2A DPAK

ECAD Model:

Datasheet:: SPD03N50C3

Specifications

Infineon Technologies SPD03N50C3 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SPD03N50C3.

Package / Case
TO-252-2(DPAK)
Packaging
Tape & Reel (TR)
FET Type
N Channel
Rds On (Max) @ Id, Vgs
1.4Ω @ 2A,10V
Vgs(th) (Max) @ Id
3.9V @ 135uA
Drain to Source Voltage (Vdss)
560V
Continuous Drain Current (Id) @ 25°C
3.2A Tc
Power Dissipation-Max (Ta=25°C)
38W Tc
RoHS Status
RoHS Compliant

Description

SPD03N50C3 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet SPD03N50C3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SPD03N50C3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to SPD03N50C3.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Mount

Mounting Type

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Turn On Delay Time

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Radiation Hardening

Lead Free

Factory Lead Time

Qualification Status

Case Connection

Transistor Application

JEDEC-95 Code

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Surface Mount

Reach Compliance Code

View Compare
SPD03N50C3

Infineon Technologies

TO-252-2(DPAK)

Tape & Reel (TR)

N Channel

1.4Ω @ 2A,10V

3.9V @ 135uA

560V

3.2A Tc

38W Tc

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SPD07N20GBTMA1

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

N-Channel

400m Ω @ 4.5A, 10V

4V @ 1mA

-

-

-

RoHS Compliant

Surface Mount

Surface Mount

3

SILICON

-55°C~175°C TJ

SIPMOS®

2005

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

Tin (Sn)

AVALANCHE RATED

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

40

4

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

40W Tc

ENHANCEMENT MODE

40W

10 ns

Not Halogen Free

530pF @ 25V

7A Tc

31.5nC @ 10V

40ns

10V

±20V

30 ns

55 ns

7A

20V

200V

7A

0.4Ohm

28A

No

Contains Lead

-

-

-

-

-

-

-

-

-

SPD03N50C3 vs SPD07N20GBTMA1
SPD07N60C3BTMA1

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

N-Channel

600m Ω @ 4.6A, 10V

3.9V @ 350μA

650V

-

-

RoHS Compliant

Surface Mount

Surface Mount

-

SILICON

-55°C~150°C TJ

CoolMOS™

2003

-

yes

Obsolete

1 (Unlimited)

2

EAR99

-

AVALANCHE RATED

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

3

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

83W Tc

ENHANCEMENT MODE

83W

6 ns

-

790pF @ 25V

7.3A Tc

27nC @ 10V

3.5ns

10V

±20V

7 ns

60 ns

7.3A

20V

-

-

0.6Ohm

-

-

Lead Free

52 Weeks

Not Qualified

DRAIN

SWITCHING

TO-252AA

600V

230 mJ

-

-

SPD03N50C3 vs SPD07N60C3BTMA1
SPD04N60S5

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

N-Channel

950m Ω @ 2.8A, 10V

5.5V @ 200μA

600V

-

-

ROHS3 Compliant

-

Surface Mount

-

SILICON

-55°C~150°C TJ

CoolMOS™

-

e3

yes

Obsolete

1 (Unlimited)

2

-

MATTE TIN

AVALANCHE RATED, HIGH VOLTAGE

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

40

3

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

50W Tc

ENHANCEMENT MODE

-

-

-

580pF @ 25V

4.5A Tc

22.9nC @ 10V

-

10V

±20V

-

-

-

-

-

4.5A

0.95Ohm

9A

-

-

-

COMMERCIAL

DRAIN

SWITCHING

TO-252AA

600V

130 mJ

YES

unknown

SPD03N50C3 vs SPD04N60S5