Infineon Technologies SPB80P06P G

Name: SPB80P06P G
Brand: Infineon Technologies
SKU: 2479863-SPB80P06P G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SPB80P06P G

Manufacturer:: Infineon Technologies

Ventron No:: 2479863-SPB80P06P G

Description:: MOSFET P-CH 60V 80A TO-263

ECAD Model:

Datasheet:: SPB80P06P G

Specifications

Infineon Technologies SPB80P06P G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies SPB80P06P G.

Package / Case
PG-TO263-3
Packaging
Tape & Reel (TR)
FET Type
P Channel
Rds On (Max) @ Id, Vgs
23mΩ @ 64A,10V
Vgs(th) (Max) @ Id
4V @ 5.5mA
Drain to Source Voltage (Vdss)
60V
Continuous Drain Current (Id) @ 25°C
80A Tc
Power Dissipation-Max (Ta=25°C)
340W Tc
RoHS Status
RoHS Compliant

Description

SPB80P06P G Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet SPB80P06P G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SPB80P06P G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to SPB80P06P G.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Mount

Mounting Type

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lead Free

Number of Pins

View Compare
SPB80P06P G

Infineon Technologies

PG-TO263-3

Tape & Reel (TR)

P Channel

23mΩ @ 64A,10V

4V @ 5.5mA

60V

80A Tc

340W Tc

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SPB80N04S2-04

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

N-Channel

3.4m Ω @ 80A, 10V

4V @ 250μA

-

-

-

Non-RoHS Compliant

Surface Mount

Surface Mount

SILICON

-55°C~175°C TJ

OptiMOS™

2004

e0

Obsolete

1 (Unlimited)

2

EAR99

TIN LEAD

AVALANCHE RATED

FET General Purpose Power

40V

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

unknown

80A

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

300W Tc

ENHANCEMENT MODE

DRAIN

6980pF @ 25V

80A Tc

170nC @ 10V

10V

±20V

80A

0.0034Ohm

320A

810 mJ

Contains Lead

-

SPB80P06P G vs SPB80N04S2-04
SPB80N06S2-07

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

N-Channel

6.6m Ω @ 68A, 10V

4V @ 180μA

-

-

-

Non-RoHS Compliant

Surface Mount

Surface Mount

SILICON

-55°C~175°C TJ

OptiMOS™

2003

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

AVALANCHE RATED

FET General Purpose Power

55V

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

unknown

80A

-

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

250W Tc

ENHANCEMENT MODE

DRAIN

4540pF @ 25V

80A Tc

110nC @ 10V

10V

±20V

80A

0.0066Ohm

320A

530 mJ

Contains Lead

-

SPB80P06P G vs SPB80N06S2-07
SPB80N03S203GATMA1

Infineon Technologies

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

N-Channel

3.1m Ω @ 80A, 10V

4V @ 250μA

30V

-

-

RoHS Compliant

Surface Mount

Surface Mount

-

-55°C~175°C TJ

OptiMOS™

2003

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

300W Tc

-

-

7020pF @ 25V

80A Tc

150nC @ 10V

10V

±20V

80A

-

-

-

-

3

SPB80P06P G vs SPB80N03S203GATMA1