Vishay Siliconix SIS412DN-T1-GE3

SIS412DN-T1-GE3 Overview
The maximum input capacitance of this device is 435pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8.7A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 30A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SIS412DN-T1-GE3 Features
a continuous drain current (ID) of 8.7A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 30A.
a threshold voltage of 1V


SIS412DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIS412DN-T1-GE3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,