SIR466DP-T1-GE3

Vishay Siliconix SIR466DP-T1-GE3

Part Number:
SIR466DP-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2479591-SIR466DP-T1-GE3
Description:
MOSFET N-CH 30V 40A PPAK SO-8
ECAD Model:
Datasheet:
SIR466DP-T1-GE3

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Part Pictures
  • SIR466DP-T1-GE3 Detail Images
  • SIR466DP-T1-GE3 Detail Images
  • SIR466DP-T1-GE3 Detail Images
  • SIR466DP-T1-GE3 Detail Images
  • SIR466DP-T1-GE3 Detail Images
  • SIR466DP-T1-GE3 Detail Images
Specifications
Vishay Siliconix SIR466DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIR466DP-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    3.5mOhm
  • Terminal Finish
    MATTE TIN
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C5
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    5W Ta 54W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    30 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.5m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2730pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    65nC @ 10V
  • Rise Time
    9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    40A
  • Threshold Voltage
    2.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    70A
  • Avalanche Energy Rating (Eas)
    45 mJ
  • Height
    1.04mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SIR466DP-T1-GE3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2730pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.Peak drain current is 70A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.4V, which means that it will not activate any of its functions when its threshold voltage reaches 2.4V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SIR466DP-T1-GE3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 70A.
a threshold voltage of 2.4V


SIR466DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR466DP-T1-GE3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SIR466DP-T1-GE3 More Descriptions
Single N-Channel 30 V 3.5 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:40000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0051ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.4V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
MOSFET, N CH, 30V, 0.0029OHM, 40A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:54W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
SIR466DP-T1-GE3 Detail Images
Product Comparison
The three parts on the right have similar specifications to SIR466DP-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Radiation Hardening
    Contact Plating
    Surface Mount
    Configuration
    Drain Current-Max (Abs) (ID)
    View Compare
  • SIR466DP-T1-GE3
    SIR466DP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    3.5mOhm
    MATTE TIN
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    Not Qualified
    1
    1
    5W Ta 54W Tc
    Single
    ENHANCEMENT MODE
    5W
    DRAIN
    30 ns
    N-Channel
    SWITCHING
    3.5m Ω @ 15A, 10V
    2.4V @ 250μA
    2730pF @ 15V
    40A Tc
    65nC @ 10V
    9ns
    4.5V 10V
    ±20V
    9 ns
    35 ns
    40A
    2.4V
    20V
    30V
    70A
    45 mJ
    1.04mm
    4.9mm
    5.89mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SIR482DP-T1-GE3
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    -
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    -
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    MATTE TIN
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-PDSO-C5
    -
    1
    1
    5W Ta 27.7W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    5.6m Ω @ 20A, 10V
    2.3V @ 250μA
    1575pF @ 15V
    35A Tc
    38nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    35A
    -
    20V
    -
    70A
    20 mJ
    -
    -
    -
    -
    ROHS3 Compliant
    -
    30V
    0.0075Ohm
    30V
    No
    -
    -
    -
    -
  • SIR472DP-T1-GE3
    10 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    12mOhm
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-PDSO-C5
    -
    1
    1
    3.9W Ta 29.8W Tc
    Single
    ENHANCEMENT MODE
    3.9W
    DRAIN
    16 ns
    N-Channel
    SWITCHING
    12m Ω @ 13.8A, 10V
    2.5V @ 250μA
    820pF @ 15V
    20A Tc
    23nC @ 10V
    12ns
    4.5V 10V
    ±20V
    10 ns
    16 ns
    20A
    2.5V
    20V
    30V
    50A
    24 mJ
    1.04mm
    4.9mm
    5.89mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    No
    Tin
    -
    -
    -
  • SIR432DP-T1-GE3
    -
    -
    Surface Mount
    PowerPAK® SO-8
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    -
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-PDSO-C5
    Not Qualified
    1
    -
    5W Ta 54W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    30.6m Ω @ 8.6A, 10V
    4V @ 250μA
    1170pF @ 50V
    28.4A Tc
    32nC @ 10V
    -
    7.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    40A
    14.5 mJ
    -
    -
    -
    -
    ROHS3 Compliant
    -
    100V
    0.0306Ohm
    100V
    -
    -
    YES
    SINGLE WITH BUILT-IN DIODE
    8.6A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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