Vishay Siliconix SIR462DP-T1-GE3
- Part Number:
- SIR462DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478421-SIR462DP-T1-GE3
- Description:
- MOSFET N-CH 30V 30A PPAK SO-8
- Datasheet:
- SIR462DP-T1-GE3
Vishay Siliconix SIR462DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIR462DP-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance7.9mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- JESD-30 CodeR-XDSO-C5
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max4.8W Ta 41.7W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation4.8W
- Case ConnectionDRAIN
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.9m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1155pF @ 15V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- Rise Time15ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)30A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Pulsed Drain Current-Max (IDM)70A
- DS Breakdown Voltage-Min30V
- Nominal Vgs3 V
- Height1.04mm
- Length4.9mm
- Width5.89mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SIR462DP-T1-GE3 Overview
The maximum input capacitance of this device is 1155pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 70A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SIR462DP-T1-GE3 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 25 ns
based on its rated peak drain current 70A.
a threshold voltage of 3V
a 30V drain to source voltage (Vdss)
SIR462DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR462DP-T1-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1155pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 70A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SIR462DP-T1-GE3 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 25 ns
based on its rated peak drain current 70A.
a threshold voltage of 3V
a 30V drain to source voltage (Vdss)
SIR462DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR462DP-T1-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SIR462DP-T1-GE3 More Descriptions
Single N-Channel 30 V 0.0079 Ohm 41.7 W SMT Power Mosfet - PowerPAK-SO-8
Transistor MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/RAvnet Japan
MOSFET, N CH, 30V, 30A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:41.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
Transistor MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/RAvnet Japan
MOSFET, N CH, 30V, 30A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:41.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
The three parts on the right have similar specifications to SIR462DP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingElement ConfigurationDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxView Compare
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SIR462DP-T1-GE314 WeeksSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesActive1 (Unlimited)5EAR997.9mOhmMatte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C51SINGLE WITH BUILT-IN DIODE14.8W Ta 41.7W TcENHANCEMENT MODE4.8WDRAIN20 nsN-ChannelSWITCHING7.9m Ω @ 20A, 10V3V @ 250μA1155pF @ 15V30A Tc30nC @ 10V15ns30V4.5V 10V±20V10 ns25 ns30A3V20V70A30V3 V1.04mm4.9mm5.89mmUnknownNoROHS3 CompliantLead Free-------------
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10 WeeksSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesObsolete1 (Unlimited)5EAR9912mOhm-FET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260408R-PDSO-C51-13.9W Ta 29.8W TcENHANCEMENT MODE3.9WDRAIN16 nsN-ChannelSWITCHING12m Ω @ 13.8A, 10V2.5V @ 250μA820pF @ 15V20A Tc23nC @ 10V12ns-4.5V 10V±20V10 ns16 ns20A2.5V20V50A--1.04mm4.9mm5.89mmUnknownNoROHS3 CompliantLead FreeTinSingle30V24 mJ--------
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14 WeeksSurface MountSurface MountPowerPAK® SO-88506.605978mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2013--Active1 (Unlimited)-----MOSFET (Metal Oxide)------1-15.2W Ta 69W Tc-5.2W-28 nsN-Channel-3.8mOhm @ 15A, 10V2.5V @ 250μA3350pF @ 20V50A Tc90nC @ 10V85ns40V4.5V 10V±20V40 ns42 ns50A-20V---1.04mm4.9mm5.89mm--ROHS3 CompliantLead Free-Single40V-PowerPAK® SO-8150°C-55°C3.35nF3.1mOhm3.8 mΩ--
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14 WeeksSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)-2009e3yesActive1 (Unlimited)5EAR99-MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260408R-PDSO-C51SINGLE WITH BUILT-IN DIODE139W TcENHANCEMENT MODE5WDRAIN19 nsN-ChannelSWITCHING5m Ω @ 20A, 10V2.4V @ 250μA2410pF @ 20V40A Tc75nC @ 10V73ns-4.5V 10V±20V12 ns32 ns40A2.4V20V70A-2.4 V---UnknownNoROHS3 Compliant---40V45 mJ------23.5A0.005Ohm
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