SIR462DP-T1-GE3

Vishay Siliconix SIR462DP-T1-GE3

Part Number:
SIR462DP-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2478421-SIR462DP-T1-GE3
Description:
MOSFET N-CH 30V 30A PPAK SO-8
ECAD Model:
Datasheet:
SIR462DP-T1-GE3

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Specifications
Vishay Siliconix SIR462DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIR462DP-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    7.9mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C5
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    4.8W Ta 41.7W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    4.8W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.9m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1155pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Rise Time
    15ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    30A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Pulsed Drain Current-Max (IDM)
    70A
  • DS Breakdown Voltage-Min
    30V
  • Nominal Vgs
    3 V
  • Height
    1.04mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SIR462DP-T1-GE3 Overview
The maximum input capacitance of this device is 1155pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 70A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SIR462DP-T1-GE3 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 25 ns
based on its rated peak drain current 70A.
a threshold voltage of 3V
a 30V drain to source voltage (Vdss)


SIR462DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIR462DP-T1-GE3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SIR462DP-T1-GE3 More Descriptions
Single N-Channel 30 V 0.0079 Ohm 41.7 W SMT Power Mosfet - PowerPAK-SO-8
Transistor MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/RAvnet Japan
MOSFET, N CH, 30V, 30A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:41.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
Product Comparison
The three parts on the right have similar specifications to SIR462DP-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Element Configuration
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    View Compare
  • SIR462DP-T1-GE3
    SIR462DP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    7.9mOhm
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    SINGLE WITH BUILT-IN DIODE
    1
    4.8W Ta 41.7W Tc
    ENHANCEMENT MODE
    4.8W
    DRAIN
    20 ns
    N-Channel
    SWITCHING
    7.9m Ω @ 20A, 10V
    3V @ 250μA
    1155pF @ 15V
    30A Tc
    30nC @ 10V
    15ns
    30V
    4.5V 10V
    ±20V
    10 ns
    25 ns
    30A
    3V
    20V
    70A
    30V
    3 V
    1.04mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SIR472DP-T1-GE3
    10 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    12mOhm
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-PDSO-C5
    1
    -
    1
    3.9W Ta 29.8W Tc
    ENHANCEMENT MODE
    3.9W
    DRAIN
    16 ns
    N-Channel
    SWITCHING
    12m Ω @ 13.8A, 10V
    2.5V @ 250μA
    820pF @ 15V
    20A Tc
    23nC @ 10V
    12ns
    -
    4.5V 10V
    ±20V
    10 ns
    16 ns
    20A
    2.5V
    20V
    50A
    -
    -
    1.04mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    Tin
    Single
    30V
    24 mJ
    -
    -
    -
    -
    -
    -
    -
    -
  • SIR416DP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    -
    1
    5.2W Ta 69W Tc
    -
    5.2W
    -
    28 ns
    N-Channel
    -
    3.8mOhm @ 15A, 10V
    2.5V @ 250μA
    3350pF @ 20V
    50A Tc
    90nC @ 10V
    85ns
    40V
    4.5V 10V
    ±20V
    40 ns
    42 ns
    50A
    -
    20V
    -
    -
    -
    1.04mm
    4.9mm
    5.89mm
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    Single
    40V
    -
    PowerPAK® SO-8
    150°C
    -55°C
    3.35nF
    3.1mOhm
    3.8 mΩ
    -
    -
  • SIR418DP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    MATTE TIN
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-PDSO-C5
    1
    SINGLE WITH BUILT-IN DIODE
    1
    39W Tc
    ENHANCEMENT MODE
    5W
    DRAIN
    19 ns
    N-Channel
    SWITCHING
    5m Ω @ 20A, 10V
    2.4V @ 250μA
    2410pF @ 20V
    40A Tc
    75nC @ 10V
    73ns
    -
    4.5V 10V
    ±20V
    12 ns
    32 ns
    40A
    2.4V
    20V
    70A
    -
    2.4 V
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    -
    -
    -
    40V
    45 mJ
    -
    -
    -
    -
    -
    -
    23.5A
    0.005Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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