Vishay Siliconix SIA416DJ-T1-GE3
- Part Number:
- SIA416DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848630-SIA416DJ-T1-GE3
- Description:
- MOSFET N-CH 100V 11.3A SC70-6L
- Datasheet:
- SIA416DJ-T1-GE3
Vishay Siliconix SIA416DJ-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SIA416DJ-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SC-70-6
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingDigi-Reel®
- SeriesTrenchFET®
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance83MOhm
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeS-PDSO-N3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3.5W Ta 19W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.5W
- Case ConnectionDRAIN
- Turn On Delay Time25 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs83m Ω @ 3.2A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds295pF @ 50V
- Current - Continuous Drain (Id) @ 25°C11.3A Tc
- Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
- Rise Time100ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)11.3A
- Threshold Voltage1.6V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Avalanche Energy Rating (Eas)0.45 mJ
- Height750μm
- Length2.05mm
- Width2.05mm
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SIA416DJ-T1-GE3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 0.45 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 295pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11.3A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.6V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SIA416DJ-T1-GE3 Features
the avalanche energy rating (Eas) is 0.45 mJ
a continuous drain current (ID) of 11.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
a threshold voltage of 1.6V
SIA416DJ-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIA416DJ-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 0.45 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 295pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11.3A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.6V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SIA416DJ-T1-GE3 Features
the avalanche energy rating (Eas) is 0.45 mJ
a continuous drain current (ID) of 11.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
a threshold voltage of 1.6V
SIA416DJ-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIA416DJ-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SIA416DJ-T1-GE3 More Descriptions
N-Channel 100 V 83 mOhm 3.5 W TrenchFET Power Mosfet - PowerPAK SC-70-6L
MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:MSL 1 - Unlimited
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V; Power Dissipation:19W; No. Of Pins:6Pins Rohs Compliant: No |Vishay SIA416DJ-T1-GE3.
MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:MSL 1 - Unlimited
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V; Power Dissipation:19W; No. Of Pins:6Pins Rohs Compliant: No |Vishay SIA416DJ-T1-GE3.
The three parts on the right have similar specifications to SIA416DJ-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRoHS StatusLead FreeSubcategoryPin CountDrain to Source Voltage (Vdss)Fall Time (Typ)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Nominal VgsRadiation HardeningJESD-609 CodeTerminal FinishBase Part NumberReach Compliance CodeQualification StatusTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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SIA416DJ-T1-GE314 WeeksSurface MountSurface MountPowerPAK® SC-70-66SILICON-55°C~150°C TJDigi-Reel®TrenchFET®2013yesActive1 (Unlimited)3EAR9983MOhmMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIEDS-PDSO-N3113.5W Ta 19W TcSingleENHANCEMENT MODE3.5WDRAIN25 nsN-ChannelSWITCHING83m Ω @ 3.2A, 10V3V @ 250μA295pF @ 50V11.3A Tc10nC @ 10V100ns4.5V 10V±20V15 ns11.3A1.6V20V100V0.45 mJ750μm2.05mm2.05mmUnknownROHS3 CompliantLead Free----------------
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-Surface MountSurface MountPowerPAK® SC-70-66SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009yesObsolete1 (Unlimited)3EAR9930MOhmMOSFET (Metal Oxide)DUAL-26040S-XDSO-N31-3.5W Ta 19W TcSingleENHANCEMENT MODE3.5WDRAIN-P-ChannelSWITCHING30m Ω @ 5.9A, 4.5V850mV @ 250μA1500pF @ 10V12A Tc29nC @ 5V46ns1.2V 4.5V±5V91 ns-12A-1V5V-20V----UnknownROHS3 CompliantLead FreeFET General Purpose Power620V52 ns8.8A30A-1 VNo-------
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14 WeeksSurface MountSurface MountPowerPAK® SC-70-66SILICON-55°C~150°C TJTape & Reel (TR)ThunderFET®2007-Active1 (Unlimited)3EAR99-MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIEDS-PDSO-N3113.5W Ta 19W TcSingleENHANCEMENT MODE-DRAIN5 nsN-ChannelSWITCHING177m Ω @ 3A, 10V3.5V @ 250μA230pF @ 75V7.7A Tc8nC @ 10V13ns6V 10V±20V10 ns7.7A3.5V20V150V2.5 mJ750μm2.05mm2.05mmUnknownROHS3 Compliant----10 ns----e3MATTE TINSIA446----
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-Surface MountSurface MountPowerPAK® SC-70-66SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016yesObsolete1 (Unlimited)3EAR99-MOSFET (Metal Oxide)DUALFLAT26040S-XDSO-F31-3.3W Ta 15W TcSingleENHANCEMENT MODE15WDRAIN-N-ChannelSWITCHING2.9 Ω @ 700mA, 10V2.4V @ 250μA167pF @ 120V1.52A Tc7.04nC @ 10V22ns2.5V 10V±20V23 ns1.52A-20V240V-----ROHS3 Compliant--6-19 ns-1.5A--e3Matte Tin (Sn)-unknownNot Qualified40.5ns23.25ns
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