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SI9926BDY-T1-E3

Vishay Siliconix SI9926BDY-T1-E3

Part Number:
SI9926BDY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2474207-SI9926BDY-T1-E3
Description:
MOSFET 2N-CH 20V 6.2A 8-SOIC
ECAD Model:
Datasheet:
SI9926BDY-T1-E3

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Specifications
Vishay Siliconix SI9926BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI9926BDY-T1-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Supplier Device Package
    8-SO
  • Weight
    506.605978mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2007
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    20mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    1.14W
  • Base Part Number
    SI9926
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Power Dissipation
    1.14W
  • Turn On Delay Time
    35 ns
  • Power - Max
    1.14W
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    20mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    6.2A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 4.5V
  • Rise Time
    50ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    50 ns
  • Turn-Off Delay Time
    31 ns
  • Continuous Drain Current (ID)
    8.2A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    20V
  • FET Feature
    Logic Level Gate
  • Drain to Source Resistance
    20mOhm
  • Rds On Max
    20 mΩ
  • Nominal Vgs
    600 mV
  • Height
    1.5494mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI9926BDY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI9926BDY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI9926BDY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI9926BDY-T1-E3 More Descriptions
MOSFET, Dual, N-Channel, 20V, 8.2A, 2W, SO-8 | Siliconix / Vishay SI9926BDY-T1-E3
Trans MOSFET N-CH 20V 6.2A 8-Pin SOIC N T/R
DUAL N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:6.2A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.016ohm; Rds(on) Test Voltage Vgs:4.5V
Product Comparison
The three parts on the right have similar specifications to SI9926BDY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Base Part Number
    Number of Elements
    Number of Channels
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Feature
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Factory Lead Time
    Contact Plating
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    ECCN Code
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Operating Mode
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    FET Technology
    REACH SVHC
    JESD-609 Code
    Terminal Finish
    Max Junction Temperature (Tj)
    View Compare
  • SI9926BDY-T1-E3
    SI9926BDY-T1-E3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    506.605978mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2007
    Obsolete
    1 (Unlimited)
    20mOhm
    150°C
    -55°C
    1.14W
    SI9926
    2
    2
    Dual
    1.14W
    35 ns
    1.14W
    2 N-Channel (Dual)
    20mOhm @ 8.2A, 4.5V
    1.5V @ 250μA
    6.2A
    20nC @ 4.5V
    50ns
    20V
    50 ns
    31 ns
    8.2A
    12V
    20V
    Logic Level Gate
    20mOhm
    20 mΩ
    600 mV
    1.5494mm
    4.9784mm
    3.9878mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI9933CDY-T1-E3
    SI9933CDY-T1-E3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    186.993455mg
    -50°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    Active
    1 (Unlimited)
    58MOhm
    -
    -
    470mW
    SI9933
    2
    2
    Dual
    -
    21 ns
    3.1W
    2 P-Channel (Dual)
    58m Ω @ 4.8A, 4.5V
    1.4V @ 250μA
    4A
    26nC @ 10V
    50ns
    20V
    13 ns
    29 ns
    -4A
    12V
    -20V
    Logic Level Gate
    -
    -
    -
    1.55mm
    5mm
    4mm
    No
    ROHS3 Compliant
    Lead Free
    14 Weeks
    Tin
    SILICON
    yes
    8
    EAR99
    Other Transistors
    GULL WING
    260
    30
    8
    ENHANCEMENT MODE
    SWITCHING
    665pF @ 10V
    -1.4V
    4A
    METAL-OXIDE SEMICONDUCTOR
    No SVHC
    -
    -
    -
    SI9926BDY-T1-E3 vs SI9933CDY-T1-E3
  • SI9945BDY-T1-GE3
    SI9945BDY-T1-GE3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    186.993455mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    Active
    1 (Unlimited)
    58mOhm
    -
    -
    3.1W
    SI9945
    2
    2
    Dual
    3.1W
    10 ns
    -
    2 N-Channel (Dual)
    58m Ω @ 4.3A, 10V
    3V @ 250μA
    5.3A
    20nC @ 10V
    15ns
    -
    10 ns
    20 ns
    4.3A
    20V
    60V
    Logic Level Gate
    -
    -
    2.5 V
    1.75mm
    5mm
    4mm
    No
    ROHS3 Compliant
    Lead Free
    14 Weeks
    -
    SILICON
    yes
    8
    EAR99
    FET General Purpose Powers
    GULL WING
    260
    30
    8
    ENHANCEMENT MODE
    SWITCHING
    665pF @ 15V
    1V
    5.3A
    METAL-OXIDE SEMICONDUCTOR
    No SVHC
    e3
    Matte Tin (Sn)
    150°C
    SI9926BDY-T1-E3 vs SI9945BDY-T1-GE3
  • SI9936BDY-T1-E3
    SI9936BDY-T1-E3
    Vishay Siliconix
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    186.993455mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2015
    Obsolete
    1 (Unlimited)
    35mOhm
    150°C
    -55°C
    1.1W
    SI9936
    2
    2
    Dual
    1.1W
    10 ns
    1.1W
    2 N-Channel (Dual)
    35mOhm @ 6A, 10V
    3V @ 250μA
    4.5A
    13nC @ 10V
    15ns
    30V
    15 ns
    25 ns
    6A
    20V
    30V
    Logic Level Gate
    35mOhm
    35 mΩ
    -
    1.55mm
    5mm
    4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SI9926BDY-T1-E3 vs SI9936BDY-T1-E3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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