Vishay Siliconix SI4488DY-T1-E3
- Part Number:
- SI4488DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2484230-SI4488DY-T1-E3
- Description:
- MOSFET N-CH 150V 3.5A 8-SOIC
- Datasheet:
- SI4488DY-T1-E3
Vishay Siliconix SI4488DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4488DY-T1-E3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance50mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.56W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.56W
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs50m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA (Min)
- Current - Continuous Drain (Id) @ 25°C3.5A Ta
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Rise Time7ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)5A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage150V
- Nominal Vgs2 V
- Height1.5494mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4488DY-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 22 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
SI4488DY-T1-E3 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 22 ns
a threshold voltage of 2V
SI4488DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4488DY-T1-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 22 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
SI4488DY-T1-E3 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 22 ns
a threshold voltage of 2V
SI4488DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4488DY-T1-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SI4488DY-T1-E3 More Descriptions
Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - SOIC-8
MOSFET; SOIC8 150V N-Channel Trench | Siliconix / Vishay SI4488DY-T1-E3
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.1W; No. of Pins:8
MOSFET; SOIC8 150V N-Channel Trench | Siliconix / Vishay SI4488DY-T1-E3
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.1W; No. of Pins:8
The three parts on the right have similar specifications to SI4488DY-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor ApplicationDrain-source On Resistance-MaxDrain to Source Voltage (Vdss)JEDEC-95 CodePulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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SI4488DY-T1-E314 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesActive1 (Unlimited)8EAR9950mOhmMatte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING260408111.56W TaSingleENHANCEMENT MODE1.56W12 nsN-Channel50m Ω @ 5A, 10V2V @ 250μA (Min)3.5A Ta36nC @ 10V7ns10V±20V7 ns22 ns5A2V20V150V2 V1.5494mm4.9784mm3.9878mmNo SVHCNoROHS3 CompliantLead Free-------
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14 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2008e3yesActive1 (Unlimited)8EAR994.5mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260308111.6W TaSingleENHANCEMENT MODE1.6W42 nsN-Channel4.5m Ω @ 21A, 10V1V @ 250μA (Min)14A Ta32nC @ 4.5V42ns4.5V 10V±20V26 ns60 ns21A-20V20V1 V1.55mm5mm4mmUnknownNoROHS3 CompliantLead FreeSWITCHING-----
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14 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3-Active1 (Unlimited)8EAR99-PURE MATTE TIN-MOSFET (Metal Oxide)DUALGULL WING260308111.6W TaSingleENHANCEMENT MODE-20 nsN-Channel4.5m Ω @ 20A, 10V3V @ 250μA14A Ta36nC @ 4.5V14ns4.5V 10V±20V14 ns60 ns20A3V20V30V-1.55mm5mm4mmUnknownNoROHS3 Compliant--0.0045Ohm----
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesObsolete1 (Unlimited)8EAR99-Matte Tin (Sn)-MOSFET (Metal Oxide)DUALGULL WING2603081-1.5W TaSingleENHANCEMENT MODE-20 nsN-Channel9m Ω @ 13.5A, 4.5V1.4V @ 250μA9.5A Ta60nC @ 4.5V15ns2.5V 4.5V±12V15 ns150 ns9.5A-12V------NoROHS3 Compliant--0.009Ohm20VMS-012AA50A20V
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