Fairchild/ON Semiconductor SI4435DY
- Part Number:
- SI4435DY
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478300-SI4435DY
- Description:
- MOSFET P-CH 30V 8.8A 8-SOIC
- Datasheet:
- SI4435DY
Fairchild/ON Semiconductor SI4435DY technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SI4435DY.
- Lifecycle StatusACTIVE (Last Updated: 15 hours ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2001
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance20MOhm
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-8.8A
- Number of Elements1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time16 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs20m Ω @ 8.8A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1604pF @ 15V
- Current - Continuous Drain (Id) @ 25°C8.8A Ta
- Gate Charge (Qg) (Max) @ Vgs24nC @ 5V
- Rise Time13.5ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time42 ns
- Continuous Drain Current (ID)-8.8A
- Threshold Voltage-1.7V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Dual Supply Voltage-30V
- Nominal Vgs-1.7 V
- Height1.57mm
- Length4.9mm
- Width3.9mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4435DY Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1604pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -8.8A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [42 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1.7V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI4435DY Features
a continuous drain current (ID) of -8.8A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 42 ns
a threshold voltage of -1.7V
a 30V drain to source voltage (Vdss)
SI4435DY Applications
There are a lot of ON Semiconductor
SI4435DY applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1604pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -8.8A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [42 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1.7V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI4435DY Features
a continuous drain current (ID) of -8.8A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 42 ns
a threshold voltage of -1.7V
a 30V drain to source voltage (Vdss)
SI4435DY Applications
There are a lot of ON Semiconductor
SI4435DY applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI4435DY More Descriptions
MOSFET P-CH 30V 8.8A 8-SOIC / Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC T/R
P-Channel 30 V 20 mOhm 17 nC Surface Mount PowerTrench Mosfet - SOIC-8
30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ
MOSFET, P CHANNEL0, -30V, -8.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
P-Channel 30 V 20 mOhm 17 nC Surface Mount PowerTrench Mosfet - SOIC-8
30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ
MOSFET, P CHANNEL0, -30V, -8.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
The three parts on the right have similar specifications to SI4435DY.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureNumber of ChannelsDrain to Source ResistanceRds On MaxVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Peak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountInput CapacitanceView Compare
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SI4435DYACTIVE (Last Updated: 15 hours ago)18 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®2001e4yesActive1 (Unlimited)8SMD/SMTEAR9920MOhmNickel/Palladium/Gold (Ni/Pd/Au)Other Transistors-30VMOSFET (Metal Oxide)DUALGULL WING-8.8A12.5W TaSingleENHANCEMENT MODE2.5W16 nsP-ChannelSWITCHING20m Ω @ 8.8A, 10V3V @ 250μA1604pF @ 15V8.8A Ta24nC @ 5V13.5ns30V4.5V 10V±20V25 ns42 ns-8.8A-1.7V20V-30V-30V-1.7 V1.57mm4.9mm3.9mmNo SVHCNoROHS3 CompliantLead Free---------------------------
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--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mg--55°C~175°C TJTape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)---11.85W TaSingle-1.85W16 nsN-Channel-11mOhm @ 12A, 10V2V @ 250μA (Min)-9A Ta70nC @ 10V12ns60V6V 10V±20V12 ns50 ns12.7A2V20V60V60V2 V1.55mm5mm4mmNo SVHCNoROHS3 CompliantLead Free8-SO175°C-55°C111mOhm11 mΩ--------------------
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-----------------------------------------------------------------1V @ 250µAMOSFET (Metal Oxide)8-SOHEXFET®9 mOhm @ 12.5A, 10V2.5W (Ta)Tube8-SOIC (0.154", 3.90mm Width)-55°C ~ 150°C (TJ)Surface Mount2240pF @ 15V78nC @ 10VN-Channel-30V12.5A (Ta)----
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--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3-Obsolete1 (Unlimited)8-EAR996.5mOhmMATTE TIN--MOSFET (Metal Oxide)DUALGULL WING-11.6W TaSingleENHANCEMENT MODE1.6W20 nsN-Channel-6.5m Ω @ 23A, 10V3V @ 250μA-15A Ta55nC @ 4.5V15ns-4.5V 10V±20V40 ns105 ns23A-20V30V-1 V---UnknownNoROHS3 CompliantLead Free----------------------2604082nF
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