SI4435DY

Fairchild/ON Semiconductor SI4435DY

Part Number:
SI4435DY
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478300-SI4435DY
Description:
MOSFET P-CH 30V 8.8A 8-SOIC
ECAD Model:
Datasheet:
SI4435DY

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor SI4435DY technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SI4435DY.
  • Lifecycle Status
    ACTIVE (Last Updated: 15 hours ago)
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2001
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    20MOhm
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -8.8A
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    16 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    20m Ω @ 8.8A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1604pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    8.8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 5V
  • Rise Time
    13.5ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    42 ns
  • Continuous Drain Current (ID)
    -8.8A
  • Threshold Voltage
    -1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -30V
  • Dual Supply Voltage
    -30V
  • Nominal Vgs
    -1.7 V
  • Height
    1.57mm
  • Length
    4.9mm
  • Width
    3.9mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4435DY Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1604pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -8.8A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [42 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1.7V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI4435DY Features
a continuous drain current (ID) of -8.8A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 42 ns
a threshold voltage of -1.7V
a 30V drain to source voltage (Vdss)


SI4435DY Applications
There are a lot of ON Semiconductor
SI4435DY applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI4435DY More Descriptions
MOSFET P-CH 30V 8.8A 8-SOIC / Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC T/R
P-Channel 30 V 20 mOhm 17 nC Surface Mount PowerTrench Mosfet - SOIC-8
30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ
MOSFET, P CHANNEL0, -30V, -8.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
Product Comparison
The three parts on the right have similar specifications to SI4435DY.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Drain to Source Resistance
    Rds On Max
    Vgs(th) (Max) @ Id:
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Input Capacitance
    View Compare
  • SI4435DY
    SI4435DY
    ACTIVE (Last Updated: 15 hours ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    e4
    yes
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    20MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    -30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -8.8A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    16 ns
    P-Channel
    SWITCHING
    20m Ω @ 8.8A, 10V
    3V @ 250μA
    1604pF @ 15V
    8.8A Ta
    24nC @ 5V
    13.5ns
    30V
    4.5V 10V
    ±20V
    25 ns
    42 ns
    -8.8A
    -1.7V
    20V
    -30V
    -30V
    -1.7 V
    1.57mm
    4.9mm
    3.9mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4470EY-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    1.85W Ta
    Single
    -
    1.85W
    16 ns
    N-Channel
    -
    11mOhm @ 12A, 10V
    2V @ 250μA (Min)
    -
    9A Ta
    70nC @ 10V
    12ns
    60V
    6V 10V
    ±20V
    12 ns
    50 ns
    12.7A
    2V
    20V
    60V
    60V
    2 V
    1.55mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    8-SO
    175°C
    -55°C
    1
    11mOhm
    11 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4420DY
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1V @ 250µA
    MOSFET (Metal Oxide)
    8-SO
    HEXFET®
    9 mOhm @ 12.5A, 10V
    2.5W (Ta)
    Tube
    8-SOIC (0.154", 3.90mm Width)
    -55°C ~ 150°C (TJ)
    Surface Mount
    2240pF @ 15V
    78nC @ 10V
    N-Channel
    -
    30V
    12.5A (Ta)
    -
    -
    -
    -
  • SI4404DY-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    -
    Obsolete
    1 (Unlimited)
    8
    -
    EAR99
    6.5mOhm
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    1.6W Ta
    Single
    ENHANCEMENT MODE
    1.6W
    20 ns
    N-Channel
    -
    6.5m Ω @ 23A, 10V
    3V @ 250μA
    -
    15A Ta
    55nC @ 4.5V
    15ns
    -
    4.5V 10V
    ±20V
    40 ns
    105 ns
    23A
    -
    20V
    30V
    -
    1 V
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    260
    40
    8
    2nF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.