Vishay Siliconix SI4420BDY-T1-E3

Name: SI4420BDY-T1-E3
Brand: Vishay Siliconix
SKU: 2848424-SI4420BDY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4420BDY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2848424-SI4420BDY-T1-E3

Description:: MOSFET N-CH 30V 9.5A 8-SOIC

ECAD Model:

Datasheet:: SI4420BDY-T1-E3

Specifications

Vishay Siliconix SI4420BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4420BDY-T1-E3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
186.993455mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
8.5mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
8
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.4W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.4W
Turn On Delay Time
15 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
8.5m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Current - Continuous Drain (Id) @ 25°C
9.5A Ta
Gate Charge (Qg) (Max) @ Vgs
50nC @ 10V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Forward Voltage
750mV
Fall Time (Typ)
12 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
9.5A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Height
1.55mm
Length
5mm
Width
4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI4420BDY-T1-E3 Overview
This device has a continuous drain current (ID) of [9.5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 40 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SI4420BDY-T1-E3 Features
a continuous drain current (ID) of 9.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 40 ns
a threshold voltage of 3V

SI4420BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4420BDY-T1-E3 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

SI4420BDY-T1-E3 More Descriptions

Si4420BDY Series 30 V 9.5 A 8.5 mOhm Surface Mount N-Channel Mosfet - SOIC-8
MOSFET, Power,N-Ch,VDSS 30V,RDS(ON) 0.007Ohm,ID 9.5A,SO-8,PD 1.4W,VGS /-20V,-55C
Trans MOSFET N-CH 30V 9.5A 8-Pin SOIC N T/R
SI4420BDY-T1-E3 Vishay MOSFET N-Ch 30V 9.5A 8-SOICRoHS
Transistor, Mosfet, N Channel, 30V, 9.5A, So-8, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:1.4W Rohs Compliant: No |Vishay SI4420BDY-T1-E3.
MOSFET, N, SOIC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:13.5A; Resistance, Rds On:0.0085ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Base Number:4420; N-channel Gate Charge:16nC; No. of Pins:8; Resistance, Rds on @ Vgs = 10V:0.0085ohm; Resistance, Rds on @ Vgs = 4.5V:0.011ohm; Voltage, Vds Max:30V

Product Comparison

The three parts on the right have similar specifications to SI4420BDY-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Forward Voltage

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Transistor Application

Nominal Vgs

Contact Plating

Drain to Source Voltage (Vdss)

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
SI4420BDY-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Active

1 (Unlimited)

8

EAR99

8.5mOhm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

8

1

1

1.4W Ta

Single

ENHANCEMENT MODE

1.4W

15 ns

N-Channel

8.5m Ω @ 13.5A, 10V

3V @ 250μA

9.5A Ta

50nC @ 10V

11ns

4.5V 10V

±20V

750mV

12 ns

40 ns

9.5A

3V

20V

30V

1.55mm

5mm

4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
SI4408DY-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2008

e3

yes

Active

1 (Unlimited)

8

EAR99

4.5mOhm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

8

1

1

1.6W Ta

Single

ENHANCEMENT MODE

1.6W

42 ns

N-Channel

4.5m Ω @ 21A, 10V

1V @ 250μA (Min)

14A Ta

32nC @ 4.5V

42ns

4.5V 10V

±20V

-

26 ns

60 ns

21A

-

20V

20V

1.55mm

5mm

4mm

Unknown

No

ROHS3 Compliant

Lead Free

SWITCHING

1 V

-

-

-

-

-

-

SI4420BDY-T1-E3 vs SI4408DY-T1-E3
SI4425BDY-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

186.993455mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Active

1 (Unlimited)

8

EAR99

12mOhm

-

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

20

8

1

1

1.5W Ta

Single

ENHANCEMENT MODE

1.5W

15 ns

P-Channel

12m Ω @ 11.4A, 10V

3V @ 250μA

8.8A Ta

100nC @ 10V

13ns

4.5V 10V

±20V

-

13 ns

100 ns

-11.4A

-400mV

20V

-30V

1.55mm

5mm

4mm

Unknown

No

ROHS3 Compliant

Lead Free

SWITCHING

-400 mV

Tin

30V

-

-

-

-

SI4420BDY-T1-E3 vs SI4425BDY-T1-E3
SI4466DY-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Obsolete

1 (Unlimited)

8

EAR99

-

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

8

1

-

1.5W Ta

Single

ENHANCEMENT MODE

-

20 ns

N-Channel

9m Ω @ 13.5A, 4.5V

1.4V @ 250μA

9.5A Ta

60nC @ 4.5V

15ns

2.5V 4.5V

±12V

-

15 ns

150 ns

9.5A

-

12V

-

-

-

-

-

No

ROHS3 Compliant

-

-

-

-

20V

MS-012AA

0.009Ohm

50A

20V

SI4420BDY-T1-E3 vs SI4466DY-T1-GE3