Vishay Siliconix SI4384DY-T1-E3
- Part Number:
- SI4384DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848889-SI4384DY-T1-E3
- Description:
- MOSFET N-CH 30V 10A 8-SOIC
- Datasheet:
- SI4384DY-T1-E3
Vishay Siliconix SI4384DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4384DY-T1-E3.
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2006
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance8.5MOhm
- Additional FeatureFAST SWITCHING
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.47W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.47W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.5m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Current - Continuous Drain (Id) @ 25°C10A Ta
- Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
- Rise Time13ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)15A
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min30V
- Nominal Vgs1 V
- Height1.5494mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4384DY-T1-E3 Overview
Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI4384DY-T1-E3 Features
a continuous drain current (ID) of 15A
the turn-off delay time is 45 ns
a 30V drain to source voltage (Vdss)
SI4384DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4384DY-T1-E3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI4384DY-T1-E3 Features
a continuous drain current (ID) of 15A
the turn-off delay time is 45 ns
a 30V drain to source voltage (Vdss)
SI4384DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4384DY-T1-E3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SI4384DY-T1-E3 More Descriptions
Single N-Channel 30 V 8.5 mOhms Surface Mount Power Mosfet - SOIC-8
N-CH REDUCED QG, FAST SWITCHING MOSFET
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R
N-Channel MOSFETs 30V 15A 1.47W
French Electronic Distributor since 1988
N Channel Mosfet, 30V, 15A, Soic, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
N-CH REDUCED QG, FAST SWITCHING MOSFET
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R
N-Channel MOSFETs 30V 15A 1.47W
French Electronic Distributor since 1988
N Channel Mosfet, 30V, 15A, Soic, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
The three parts on the right have similar specifications to SI4384DY-T1-E3.
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ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)DS Breakdown Voltage-MinNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePbfree CodeTerminal FinishSubcategoryReach Compliance CodeQualification StatusInput Capacitance (Ciss) (Max) @ VdsDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Factory Lead TimeCase ConnectionView Compare
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SI4384DY-T1-E3TinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2006e3Obsolete1 (Unlimited)8EAR998.5MOhmFAST SWITCHINGMOSFET (Metal Oxide)DUALGULL WING260408111.47W TaSingleENHANCEMENT MODE1.47W10 nsN-ChannelSWITCHING8.5m Ω @ 15A, 10V3V @ 250μA10A Ta18nC @ 4.5V13ns30V4.5V 10V±20V13 ns45 ns15A20V30V1 V1.5494mm4.9784mm3.9878mmUnknownNoROHS3 CompliantLead Free-------------
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3Obsolete1 (Unlimited)8EAR99--MOSFET (Metal Oxide)DUALGULL WING2604081-3W Ta 6.6W TcSingleENHANCEMENT MODE3W-N-ChannelSWITCHING4.6m Ω @ 19.8A, 10V2V @ 250μA29A Tc115nC @ 10V10ns-4.5V 10V±12V8 ns47 ns19.8A12V-------ROHS3 Compliant-yesMATTE TINFET General Purpose PowerunknownNot Qualified4800pF @ 15V29A0.0046Ohm30V60A--
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3Obsolete1 (Unlimited)8EAR99--MOSFET (Metal Oxide)DUALGULL WING260308111.4W TaSingleENHANCEMENT MODE1.4W16 nsN-ChannelSWITCHING9.5m Ω @ 12.5A, 10V2.8V @ 250μA8.5A Ta15nC @ 4.5V6ns-4.5V 10V±20V14 ns43 ns8.5A20V------NoROHS3 Compliant-yesPURE MATTE TIN-----0.0095Ohm30V---
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3Active1 (Unlimited)8EAR99--MOSFET (Metal Oxide)DUALGULL WING260408111.31W TaSingleENHANCEMENT MODE-10 nsN-ChannelSWITCHING12.5m Ω @ 11A, 10V2V @ 250μA8A Ta23nC @ 4.5V11ns-4.5V 10V±12V11 ns55 ns8A12V--1.55mm5mm4mm--ROHS3 Compliant-yesMatte Tin (Sn)FET General Purpose PowerunknownNot Qualified-8A-30V-21 WeeksDRAIN
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