SI4384DY-T1-E3

Vishay Siliconix SI4384DY-T1-E3

Part Number:
SI4384DY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2848889-SI4384DY-T1-E3
Description:
MOSFET N-CH 30V 10A 8-SOIC
ECAD Model:
Datasheet:
SI4384DY-T1-E3

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Specifications
Vishay Siliconix SI4384DY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4384DY-T1-E3.
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2006
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    8.5MOhm
  • Additional Feature
    FAST SWITCHING
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.47W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.47W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.5m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    10A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 4.5V
  • Rise Time
    13ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    15A
  • Gate to Source Voltage (Vgs)
    20V
  • DS Breakdown Voltage-Min
    30V
  • Nominal Vgs
    1 V
  • Height
    1.5494mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4384DY-T1-E3 Overview
Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SI4384DY-T1-E3 Features
a continuous drain current (ID) of 15A
the turn-off delay time is 45 ns
a 30V drain to source voltage (Vdss)


SI4384DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4384DY-T1-E3 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SI4384DY-T1-E3 More Descriptions
Single N-Channel 30 V 8.5 mOhms Surface Mount Power Mosfet - SOIC-8
N-CH REDUCED QG, FAST SWITCHING MOSFET
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R
N-Channel MOSFETs 30V 15A 1.47W
French Electronic Distributor since 1988
N Channel Mosfet, 30V, 15A, Soic, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SI4384DY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Pbfree Code
    Terminal Finish
    Subcategory
    Reach Compliance Code
    Qualification Status
    Input Capacitance (Ciss) (Max) @ Vds
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Factory Lead Time
    Case Connection
    View Compare
  • SI4384DY-T1-E3
    SI4384DY-T1-E3
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2006
    e3
    Obsolete
    1 (Unlimited)
    8
    EAR99
    8.5MOhm
    FAST SWITCHING
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    1
    1.47W Ta
    Single
    ENHANCEMENT MODE
    1.47W
    10 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 15A, 10V
    3V @ 250μA
    10A Ta
    18nC @ 4.5V
    13ns
    30V
    4.5V 10V
    ±20V
    13 ns
    45 ns
    15A
    20V
    30V
    1 V
    1.5494mm
    4.9784mm
    3.9878mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4362BDY-T1-E3
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    -
    3W Ta 6.6W Tc
    Single
    ENHANCEMENT MODE
    3W
    -
    N-Channel
    SWITCHING
    4.6m Ω @ 19.8A, 10V
    2V @ 250μA
    29A Tc
    115nC @ 10V
    10ns
    -
    4.5V 10V
    ±12V
    8 ns
    47 ns
    19.8A
    12V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    yes
    MATTE TIN
    FET General Purpose Power
    unknown
    Not Qualified
    4800pF @ 15V
    29A
    0.0046Ohm
    30V
    60A
    -
    -
  • SI4390DY-T1-GE3
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    8
    1
    1
    1.4W Ta
    Single
    ENHANCEMENT MODE
    1.4W
    16 ns
    N-Channel
    SWITCHING
    9.5m Ω @ 12.5A, 10V
    2.8V @ 250μA
    8.5A Ta
    15nC @ 4.5V
    6ns
    -
    4.5V 10V
    ±20V
    14 ns
    43 ns
    8.5A
    20V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    yes
    PURE MATTE TIN
    -
    -
    -
    -
    -
    0.0095Ohm
    30V
    -
    -
    -
  • SI4348DY-T1-E3
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    1
    1.31W Ta
    Single
    ENHANCEMENT MODE
    -
    10 ns
    N-Channel
    SWITCHING
    12.5m Ω @ 11A, 10V
    2V @ 250μA
    8A Ta
    23nC @ 4.5V
    11ns
    -
    4.5V 10V
    ±12V
    11 ns
    55 ns
    8A
    12V
    -
    -
    1.55mm
    5mm
    4mm
    -
    -
    ROHS3 Compliant
    -
    yes
    Matte Tin (Sn)
    FET General Purpose Power
    unknown
    Not Qualified
    -
    8A
    -
    30V
    -
    21 Weeks
    DRAIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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