Vishay Siliconix SI3552DV-T1-E3
- Part Number:
- SI3552DV-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2847615-SI3552DV-T1-E3
- Description:
- MOSFET N/P-CH 30V 6TSOP
- ECAD Model:
-
- Datasheet:
- SI3552DV-T1-E3
Vishay Siliconix SI3552DV-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3552DV-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Supplier Device Package6-TSOP
- Weight19.986414mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance200mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation1.15W
- Base Part NumberSI3552
- Number of Elements2
- Number of Channels2
- Element ConfigurationSingle
- Power Dissipation1.15W
- Turn On Delay Time8 ns
- Power - Max1.15W
- FET TypeN and P-Channel
- Rds On (Max) @ Id, Vgs105mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA (Min)
- Current - Continuous Drain (Id) @ 25°C2.5A
- Gate Charge (Qg) (Max) @ Vgs3.2nC @ 5V
- Rise Time12ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)51A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- FET FeatureLogic Level Gate
- Drain to Source Resistance85mOhm
- Rds On Max105 mΩ
- Nominal Vgs1 V
- Height1mm
- Length3.05mm
- Width1.65mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI3552DV-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI3552DV-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI3552DV-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI3552DV-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI3552DV-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI3552DV-T1-E3 More Descriptions
MOSFET, Dual, Complementary, 30V, 2.5/1.8A, TSOP-6 | Siliconix / Vishay SI3552DV-T1-E3
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R / MOSFET N/P-CH 30V 6TSOP
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
DUAL N/P CHANNEL MOSFET, 30V, TSOP; Tran; DUAL N/P CHANNEL MOSFET, 30V, TSOP; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:2.5A; Continuous Drain Current Id, P Channel:-1.8A; Drain Source Voltage Vds, N Channel:30V
MOSFET, N & P-CH, 30V, 2.5A, TSOP; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.15W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R / MOSFET N/P-CH 30V 6TSOP
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
DUAL N/P CHANNEL MOSFET, 30V, TSOP; Tran; DUAL N/P CHANNEL MOSFET, 30V, TSOP; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:2.5A; Continuous Drain Current Id, P Channel:-1.8A; Drain Source Voltage Vds, N Channel:30V
MOSFET, N & P-CH, 30V, 2.5A, TSOP; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.15W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
The three parts on the right have similar specifications to SI3552DV-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberNumber of ElementsNumber of ChannelsElement ConfigurationPower DissipationTurn On Delay TimePower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusFactory Lead TimeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountOperating ModeTransistor ApplicationPolarity/Channel TypeFET TechnologyMax Junction Temperature (Tj)Lead FreeDrain Current-Max (Abs) (ID)Input Capacitance (Ciss) (Max) @ VdsInput CapacitanceView Compare
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SI3552DV-T1-E3Surface MountSurface MountSOT-23-6 Thin, TSOT-23-666-TSOP19.986414mg-55°C~150°C TJTape & Reel (TR)TrenchFET®2007Active1 (Unlimited)200mOhm150°C-55°C1.15WSI355222Single1.15W8 ns1.15WN and P-Channel105mOhm @ 2.5A, 10V1V @ 250μA (Min)2.5A3.2nC @ 5V12ns30V7 ns12 ns51A1V20V30VLogic Level Gate85mOhm105 mΩ1 V1mm3.05mm1.65mmUnknownNoROHS3 Compliant----------------------- -
Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66-19.986414mg-55°C~150°C TJTape & Reel (TR)TrenchFET®2011Active1 (Unlimited)170MOhm--830mWSI359022-830mW5 ns-N and P-Channel77m Ω @ 3A, 4.5V1.5V @ 250μA2.5A 1.7A4.5nC @ 4.5V15ns-15 ns20 ns2.5A-12V30VLogic Level Gate--600 mV1.1mm3.05mm1.65mmUnknownNoROHS3 Compliant14 WeeksSILICONe3yes6EAR99Matte Tin (Sn)Other TransistorsDUALGULL WING260406ENHANCEMENT MODESWITCHINGN-CHANNEL AND P-CHANNELMETAL-OXIDE SEMICONDUCTOR150°CLead Free---
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Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66---55°C~150°C TJTape & Reel (TR)TrenchFET®-Obsolete1 (Unlimited)200MOhm--830mWSI35852-Dual830mW11 ns-N and P-Channel125m Ω @ 2.4A, 4.5V600mV @ 250μA (Min)2A 1.5A3.2nC @ 4.5V34ns-34 ns19 ns19A600mV12V20VLogic Level Gate--600 mV1mm3.1mm1.7mmUnknownNoROHS3 Compliant-SILICONe3yes6EAR99MATTE TINOther Transistors-GULL WING260406ENHANCEMENT MODE-N-CHANNEL AND P-CHANNELMETAL-OXIDE SEMICONDUCTOR-Lead Free2A--
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Surface MountSurface MountSOT-23-6 Thin, TSOT-23-666-TSOP--55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)-150°C-55°C1.4W-2-Dual1.15W-1.4WN and P-Channel125mOhm @ 2.2A, 10V3V @ 250μA2.5A 1.95A7nC @ 10V38ns40V38 ns10 ns1.95A-20V40VLogic Level Gate215mOhm125 mΩ-----NoROHS3 Compliant--------------------205pF @ 20V205pF
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