Vishay Siliconix SI3483DV-T1-E3

SI3483DV-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -6.2A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.As shown in the table below, the drain current of this device is 4.7A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 71 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SI3483DV-T1-E3 Features
a continuous drain current (ID) of -6.2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 71 ns
a threshold voltage of -1V


SI3483DV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3483DV-T1-E3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,