Vishay Siliconix SI3457CDV-T1-GE3
- Part Number:
- SI3457CDV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2849026-SI3457CDV-T1-GE3
- Description:
- MOSFET P-CH 30V 5.1A 6-TSOP
- Datasheet:
- SI3457CDV-T1-GE3
Vishay Siliconix SI3457CDV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3457CDV-T1-GE3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight19.986414mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance74mOhm
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count6
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta 3W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time40 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs74m Ω @ 4.1A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds450pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.1A Tc
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Rise Time80ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)5.1A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Height1mm
- Length3.05mm
- Width1.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI3457CDV-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 450pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.1A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 40 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI3457CDV-T1-GE3 Features
a continuous drain current (ID) of 5.1A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 20 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
SI3457CDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3457CDV-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 450pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.1A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 40 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI3457CDV-T1-GE3 Features
a continuous drain current (ID) of 5.1A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 20 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
SI3457CDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3457CDV-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI3457CDV-T1-GE3 More Descriptions
Single P-Channel 30 V 74 mOhm Surface Mount Power Mosfet - TSOP-6
Trans MOSFET P-CH 30V 4.1A 6-Pin TSOP T/R / MOSFET P-CH 30V 5.1A 6-TSOP
P-Ch MOSFET TSOP-6 30V 74mohm @ 10V- Lead(Pb) and
Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
MOSFET,P CH,30V,5.1A,TSOP6; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.1A; Power Dissipation Pd:2W; Voltage Vgs Max:-20V
Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:3W; No. Of Pins:6Pins; Msl:-Rohs Compliant: No |Vishay SI3457CDV-T1-GE3.
Trans MOSFET P-CH 30V 4.1A 6-Pin TSOP T/R / MOSFET P-CH 30V 5.1A 6-TSOP
P-Ch MOSFET TSOP-6 30V 74mohm @ 10V- Lead(Pb) and
Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
MOSFET,P CH,30V,5.1A,TSOP6; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.1A; Power Dissipation Pd:2W; Voltage Vgs Max:-20V
Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:3W; No. Of Pins:6Pins; Msl:-Rohs Compliant: No |Vishay SI3457CDV-T1-GE3.
The three parts on the right have similar specifications to SI3457CDV-T1-GE3.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishAdditional FeatureDrain-source On Resistance-MaxNominal VgsDrain Current-Max (Abs) (ID)View Compare
-
SI3457CDV-T1-GE314 WeeksTinSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesActive1 (Unlimited)6EAR9974mOhmOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260406112W Ta 3W TcSingleENHANCEMENT MODE2W40 nsP-ChannelSWITCHING74m Ω @ 4.1A, 10V3V @ 250μA450pF @ 15V5.1A Tc15nC @ 10V80ns30V4.5V 10V±20V12 ns20 ns5.1A-1V20V-30V1mm3.05mm1.65mmNo SVHCNoROHS3 CompliantLead Free------
-
--Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesObsolete1 (Unlimited)6EAR99-Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2604061-1.1W TaSingleENHANCEMENT MODE1.1W20 nsP-ChannelSWITCHING40m Ω @ 6A, 4.5V1V @ 250μA-4.5A Ta14nC @ 4.5V46ns-1.8V 4.5V±8V62 ns62 ns-4.5A1V8V12V---UnknownNoROHS3 Compliant-MATTE TINULTRA-LOW RESISTANCE0.04Ohm1 V-
-
14 Weeks-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)6EAR9928MOhmFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260306112.1W Ta 2.98W TcSingleENHANCEMENT MODE-18 nsN-ChannelSWITCHING28m Ω @ 7A, 10V3V @ 250μA735pF @ 15V8A Tc19.6nC @ 10V85ns-4.5V 10V±20V12 ns17 ns7A-20V30V1mm3.05mm1.65mm-NoROHS3 CompliantLead FreeMatte Tin (Sn)---7A
-
14 Weeks-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)6EAR99-Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260306111.14W TaSingleENHANCEMENT MODE1.14W10 nsP-ChannelSWITCHING30m Ω @ 6.7A, 10V3V @ 250μA-5A Ta30nC @ 10V12ns-4.5V 10V±20V35 ns50 ns-6.7A-1V20V-20V---UnknownNoROHS3 Compliant-Matte Tin (Sn)-0.03Ohm-1 V5A
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 November 2023
Comparing the DHT11 and DHT22 Temperature and Humidity Sensor
Ⅰ. What is a temperature sensor?Ⅱ. DHT11 vs DHT22: OverviewⅢ. DHT11 vs DHT22: Symbol and footprintⅣ. DHT11 vs DHT22: FeaturesⅤ. DHT11 vs DHT22: Pin configurationⅥ. DHT11 vs DHT22:... -
21 November 2023
MCP2551 CAN Transceiver Features, Working Principle, MCP2551 vs TJA1050
Ⅰ. Overview of MCP2551 transceiverⅡ. Manufacturer of MCP2551 transceiverⅢ. Features of MCP2551 transceiverⅣ. Working principle of MCP2551 transceiverⅤ. Block diagram of MCP2551 transceiverⅥ. What is the difference between... -
21 November 2023
AD9361 RF Transceiver Manufacturer, Features, Structure and Working Principle
Ⅰ. Overview of AD9361 RF transceiverⅡ. Manufacturer of AD9361 RF transceiverⅢ. Block diagram of AD9361 RF transceiverⅣ. Structure and working principle of AD9361 RF transceiverⅤ. Features of AD9361... -
22 November 2023
ULN2804A Transistor Array Equivalents, Symbol, Working Principle and More
Ⅰ. Overview of ULN2804AⅡ. Symbol, footprint and pin configuration of ULN2804AⅢ. Manufacturer of ULN2804AⅣ. Features of ULN2804AⅤ. Technical parameters of ULN2804AⅥ. Working principle of ULN2804AⅦ. Applications of ULN2804AⅧ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.