SI3457CDV-T1-GE3

Vishay Siliconix SI3457CDV-T1-GE3

Part Number:
SI3457CDV-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2849026-SI3457CDV-T1-GE3
Description:
MOSFET P-CH 30V 5.1A 6-TSOP
ECAD Model:
Datasheet:
SI3457CDV-T1-GE3

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Specifications
Vishay Siliconix SI3457CDV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3457CDV-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Weight
    19.986414mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2015
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    74mOhm
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    6
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2W Ta 3W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Turn On Delay Time
    40 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    74m Ω @ 4.1A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    450pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • Rise Time
    80ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    5.1A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -30V
  • Height
    1mm
  • Length
    3.05mm
  • Width
    1.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI3457CDV-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 450pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.1A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 40 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI3457CDV-T1-GE3 Features
a continuous drain current (ID) of 5.1A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 20 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)


SI3457CDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3457CDV-T1-GE3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI3457CDV-T1-GE3 More Descriptions
Single P-Channel 30 V 74 mOhm Surface Mount Power Mosfet - TSOP-6
Trans MOSFET P-CH 30V 4.1A 6-Pin TSOP T/R / MOSFET P-CH 30V 5.1A 6-TSOP
P-Ch MOSFET TSOP-6 30V 74mohm @ 10V- Lead(Pb) and
Small Signal Field-Effect Transistor, 5.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
MOSFET,P CH,30V,5.1A,TSOP6; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.1A; Power Dissipation Pd:2W; Voltage Vgs Max:-20V
Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:3W; No. Of Pins:6Pins; Msl:-Rohs Compliant: No |Vishay SI3457CDV-T1-GE3.
Product Comparison
The three parts on the right have similar specifications to SI3457CDV-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Additional Feature
    Drain-source On Resistance-Max
    Nominal Vgs
    Drain Current-Max (Abs) (ID)
    View Compare
  • SI3457CDV-T1-GE3
    SI3457CDV-T1-GE3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    19.986414mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    74mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    6
    1
    1
    2W Ta 3W Tc
    Single
    ENHANCEMENT MODE
    2W
    40 ns
    P-Channel
    SWITCHING
    74m Ω @ 4.1A, 10V
    3V @ 250μA
    450pF @ 15V
    5.1A Tc
    15nC @ 10V
    80ns
    30V
    4.5V 10V
    ±20V
    12 ns
    20 ns
    5.1A
    -1V
    20V
    -30V
    1mm
    3.05mm
    1.65mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • SI3447BDV-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    6
    1
    -
    1.1W Ta
    Single
    ENHANCEMENT MODE
    1.1W
    20 ns
    P-Channel
    SWITCHING
    40m Ω @ 6A, 4.5V
    1V @ 250μA
    -
    4.5A Ta
    14nC @ 4.5V
    46ns
    -
    1.8V 4.5V
    ±8V
    62 ns
    62 ns
    -4.5A
    1V
    8V
    12V
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    -
    MATTE TIN
    ULTRA-LOW RESISTANCE
    0.04Ohm
    1 V
    -
  • SI3424BDV-T1-GE3
    14 Weeks
    -
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    19.986414mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    28MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    6
    1
    1
    2.1W Ta 2.98W Tc
    Single
    ENHANCEMENT MODE
    -
    18 ns
    N-Channel
    SWITCHING
    28m Ω @ 7A, 10V
    3V @ 250μA
    735pF @ 15V
    8A Tc
    19.6nC @ 10V
    85ns
    -
    4.5V 10V
    ±20V
    12 ns
    17 ns
    7A
    -
    20V
    30V
    1mm
    3.05mm
    1.65mm
    -
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    -
    -
    -
    7A
  • SI3469DV-T1-GE3
    14 Weeks
    -
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    19.986414mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    6
    1
    1
    1.14W Ta
    Single
    ENHANCEMENT MODE
    1.14W
    10 ns
    P-Channel
    SWITCHING
    30m Ω @ 6.7A, 10V
    3V @ 250μA
    -
    5A Ta
    30nC @ 10V
    12ns
    -
    4.5V 10V
    ±20V
    35 ns
    50 ns
    -6.7A
    -1V
    20V
    -20V
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    -
    0.03Ohm
    -1 V
    5A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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