Vishay Siliconix SI3441BDV-T1-E3

SI3441BDV-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -2.45A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -850mV threshold voltage. By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.

SI3441BDV-T1-E3 Features
a continuous drain current (ID) of -2.45A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 30 ns
a threshold voltage of -850mV


SI3441BDV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3441BDV-T1-E3 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools