SI3433CDV-T1-GE3

Vishay Siliconix SI3433CDV-T1-GE3

Part Number:
SI3433CDV-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
3070422-SI3433CDV-T1-GE3
Description:
MOSFET P-CH 20V 6A 6TSOP
ECAD Model:
Datasheet:
SI3433CDV-T1-GE3

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Specifications
Vishay Siliconix SI3433CDV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3433CDV-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Weight
    19.986414mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    38MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    6
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.6W Ta 3.3W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.6W
  • Turn On Delay Time
    20 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    38m Ω @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    45nC @ 8V
  • Rise Time
    22ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    50 ns
  • Continuous Drain Current (ID)
    -5.2A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    6A
  • Drain to Source Breakdown Voltage
    -20V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -1 V
  • Height
    1.1mm
  • Length
    3.05mm
  • Width
    1.65mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI3433CDV-T1-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1300pF @ 10V.This device has a continuous drain current (ID) of [-5.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).

SI3433CDV-T1-GE3 Features
a continuous drain current (ID) of -5.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 50 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)


SI3433CDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3433CDV-T1-GE3 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI3433CDV-T1-GE3 More Descriptions
SI3433CDV-T1-GE3 P-channel MOSFET Transistor; 6 A; 20 V; 6-Pin TSOP
Single P-Channel 20 V 38 mOhm Surface Mount TrenchFET Power Mosfet - TSOP-6
Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
MOSFET, P-CH, -20V, -6A, TSOP; Transistor Polarity: P Channel; Continuous Drain Current Id: -6A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 3.3W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Product Comparison
The three parts on the right have similar specifications to SI3433CDV-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Drain-source On Resistance-Max
    Supplier Device Package
    Termination
    Max Operating Temperature
    Min Operating Temperature
    Dual Supply Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI3433CDV-T1-GE3
    SI3433CDV-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    19.986414mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    38MOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    6
    1
    1
    1.6W Ta 3.3W Tc
    Single
    ENHANCEMENT MODE
    1.6W
    20 ns
    P-Channel
    SWITCHING
    38m Ω @ 5.2A, 4.5V
    1V @ 250μA
    1300pF @ 10V
    6A Tc
    45nC @ 8V
    22ns
    20V
    1.8V 4.5V
    ±8V
    20 ns
    50 ns
    -5.2A
    -1V
    8V
    6A
    -20V
    150°C
    -1 V
    1.1mm
    3.05mm
    1.65mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI3443BDV-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    19.986414mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    60mOhm
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    6
    1
    1
    1.1W Ta
    Single
    ENHANCEMENT MODE
    1.1W
    22 ns
    P-Channel
    -
    60m Ω @ 4.7A, 4.5V
    1.4V @ 250μA
    -
    3.6A Ta
    9nC @ 4.5V
    35ns
    20V
    2.5V 4.5V
    ±12V
    25 ns
    45 ns
    3.6A
    -1.4V
    12V
    -
    -20V
    -
    -1.4 V
    990.6μm
    3.05mm
    1.65mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI3434DV-T1-GE3
    -
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    6
    1
    -
    1.14W Ta
    Single
    ENHANCEMENT MODE
    2W
    21 ns
    N-Channel
    SWITCHING
    34m Ω @ 6.1A, 4.5V
    600mV @ 1mA (Min)
    -
    4.6A Ta
    12nC @ 4.5V
    45ns
    -
    2.5V 4.5V
    ±12V
    30 ns
    40 ns
    4.6A
    4V
    12V
    -
    30V
    -
    4 V
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    -
    -
    0.034Ohm
    -
    -
    -
    -
    -
    -
    -
    -
  • SI3443DVTRPBF
    -
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    -
    Obsolete
    2 (1 Year)
    -
    -
    65mOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    2W Ta
    -
    -
    2W
    12 ns
    P-Channel
    -
    65mOhm @ 4.4A, 4.5V
    1.2V @ 250μA
    1079pF @ 10V
    4.4A Ta
    15nC @ 4.5V
    33ns
    20V
    2.5V 4.5V
    ±12V
    72 ns
    70 ns
    -4.4A
    -1.2V
    12V
    -
    -20V
    -
    -1.2 V
    990.6μm
    3.0988mm
    1.7mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    Micro6™(TSOP-6)
    SMD/SMT
    150°C
    -55°C
    -20V
    1.079nF
    65mOhm
    65 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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