Vishay Siliconix SI3433CDV-T1-GE3
- Part Number:
- SI3433CDV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3070422-SI3433CDV-T1-GE3
- Description:
- MOSFET P-CH 20V 6A 6TSOP
- Datasheet:
- SI3433CDV-T1-GE3
Vishay Siliconix SI3433CDV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3433CDV-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight19.986414mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance38MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count6
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.6W Ta 3.3W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.6W
- Turn On Delay Time20 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs38m Ω @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 10V
- Current - Continuous Drain (Id) @ 25°C6A Tc
- Gate Charge (Qg) (Max) @ Vgs45nC @ 8V
- Rise Time22ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)-5.2A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)6A
- Drain to Source Breakdown Voltage-20V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs-1 V
- Height1.1mm
- Length3.05mm
- Width1.65mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI3433CDV-T1-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1300pF @ 10V.This device has a continuous drain current (ID) of [-5.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).
SI3433CDV-T1-GE3 Features
a continuous drain current (ID) of -5.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 50 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
SI3433CDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3433CDV-T1-GE3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1300pF @ 10V.This device has a continuous drain current (ID) of [-5.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).
SI3433CDV-T1-GE3 Features
a continuous drain current (ID) of -5.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 50 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
SI3433CDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3433CDV-T1-GE3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI3433CDV-T1-GE3 More Descriptions
SI3433CDV-T1-GE3 P-channel MOSFET Transistor; 6 A; 20 V; 6-Pin TSOP
Single P-Channel 20 V 38 mOhm Surface Mount TrenchFET Power Mosfet - TSOP-6
Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
MOSFET, P-CH, -20V, -6A, TSOP; Transistor Polarity: P Channel; Continuous Drain Current Id: -6A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 3.3W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Single P-Channel 20 V 38 mOhm Surface Mount TrenchFET Power Mosfet - TSOP-6
Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
MOSFET, P-CH, -20V, -6A, TSOP; Transistor Polarity: P Channel; Continuous Drain Current Id: -6A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 3.3W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
The three parts on the right have similar specifications to SI3433CDV-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingDrain-source On Resistance-MaxSupplier Device PackageTerminationMax Operating TemperatureMin Operating TemperatureDual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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SI3433CDV-T1-GE314 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2014e3yesActive1 (Unlimited)6EAR9938MOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260306111.6W Ta 3.3W TcSingleENHANCEMENT MODE1.6W20 nsP-ChannelSWITCHING38m Ω @ 5.2A, 4.5V1V @ 250μA1300pF @ 10V6A Tc45nC @ 8V22ns20V1.8V 4.5V±8V20 ns50 ns-5.2A-1V8V6A-20V150°C-1 V1.1mm3.05mm1.65mmUnknownNoROHS3 CompliantLead Free-----------
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14 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)6EAR9960mOhm-Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260306111.1W TaSingleENHANCEMENT MODE1.1W22 nsP-Channel-60m Ω @ 4.7A, 4.5V1.4V @ 250μA-3.6A Ta9nC @ 4.5V35ns20V2.5V 4.5V±12V25 ns45 ns3.6A-1.4V12V--20V--1.4 V990.6μm3.05mm1.65mmNo SVHCNoROHS3 CompliantLead FreeTin---------
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-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3yesObsolete1 (Unlimited)6EAR99-Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2603061-1.14W TaSingleENHANCEMENT MODE2W21 nsN-ChannelSWITCHING34m Ω @ 6.1A, 4.5V600mV @ 1mA (Min)-4.6A Ta12nC @ 4.5V45ns-2.5V 4.5V±12V30 ns40 ns4.6A4V12V-30V-4 V---UnknownNoROHS3 Compliant--0.034Ohm--------
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-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66---55°C~150°C TJTape & Reel (TR)HEXFET®2004--Obsolete2 (1 Year)--65mOhm--MOSFET (Metal Oxide)-----1-2W Ta--2W12 nsP-Channel-65mOhm @ 4.4A, 4.5V1.2V @ 250μA1079pF @ 10V4.4A Ta15nC @ 4.5V33ns20V2.5V 4.5V±12V72 ns70 ns-4.4A-1.2V12V--20V--1.2 V990.6μm3.0988mm1.7mmNo SVHCNoRoHS CompliantLead Free--Micro6™(TSOP-6)SMD/SMT150°C-55°C-20V1.079nF65mOhm65 mΩ
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