Vishay Siliconix SI3424BDV-T1-E3
- Part Number:
- SI3424BDV-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2490872-SI3424BDV-T1-E3
- Description:
- MOSFET N-CH 30V 8A 6TSOP
- Datasheet:
- SI3424BDV-T1-E3
Vishay Siliconix SI3424BDV-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3424BDV-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Supplier Device Package6-TSOP
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max2.1W Ta 2.98W Tc
- Element ConfigurationSingle
- Power Dissipation2.1W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds735pF @ 15V
- Current - Continuous Drain (Id) @ 25°C8A Tc
- Gate Charge (Qg) (Max) @ Vgs19.6nC @ 10V
- Rise Time85ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)8A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Input Capacitance735pF
- Drain to Source Resistance28mOhm
- Rds On Max28 mΩ
- Nominal Vgs3 V
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI3424BDV-T1-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 735pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 28mOhm.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI3424BDV-T1-E3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 28mOhm
a threshold voltage of 3V
a 30V drain to source voltage (Vdss)
SI3424BDV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3424BDV-T1-E3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 735pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 28mOhm.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI3424BDV-T1-E3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 28mOhm
a threshold voltage of 3V
a 30V drain to source voltage (Vdss)
SI3424BDV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3424BDV-T1-E3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI3424BDV-T1-E3 More Descriptions
N CHANNEL MOSFET, 30V, 8A, TSOP
MOSFET N-CH 30V 8A 6TSOP
N-CHANNEL 30-V (D-S) MOSFET
OEMs, CMs ONLY (NO BROKERS)
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:8000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.038ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:2.1W ;RoHS Compliant: Yes
MOSFET N-CH 30V 8A 6TSOP
N-CHANNEL 30-V (D-S) MOSFET
OEMs, CMs ONLY (NO BROKERS)
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:8000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.038ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:2.1W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI3424BDV-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsREACH SVHCRadiation HardeningRoHS StatusFactory Lead TimeContact PlatingWeightTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ChannelsOperating ModeHeightLengthWidthLead FreeTerminal FinishTransistor ApplicationDrain-source On Resistance-MaxDrain Current-Max (Abs) (ID)View Compare
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SI3424BDV-T1-E3Surface MountSurface MountSOT-23-6 Thin, TSOT-23-666-TSOP-55°C~150°C TJTape & Reel (TR)TrenchFET®2012Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)12.1W Ta 2.98W TcSingle2.1W18 nsN-Channel28mOhm @ 7A, 10V3V @ 250μA735pF @ 15V8A Tc19.6nC @ 10V85ns30V4.5V 10V±20V12 ns17 ns8A3V20V30V735pF28mOhm28 mΩ3 VUnknownNoROHS3 Compliant--------------------------
-
Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66--55°C~150°C TJTape & Reel (TR)TrenchFET®2016Active1 (Unlimited)--MOSFET (Metal Oxide)11.1W TaSingle1.1W22 nsP-Channel60m Ω @ 4.7A, 4.5V1.4V @ 250μA-3.6A Ta9nC @ 4.5V35ns20V2.5V 4.5V±12V25 ns45 ns3.6A-1.4V12V-20V----1.4 VNo SVHCNoROHS3 Compliant14 WeeksTin19.986414mgSILICONe3yes6EAR9960mOhmOther TransistorsDUALGULL WING2603061ENHANCEMENT MODE990.6μm3.05mm1.65mmLead Free----
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Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66--55°C~150°C TJTape & Reel (TR)TrenchFET®2011Obsolete1 (Unlimited)--MOSFET (Metal Oxide)11.14W TaSingle2W21 nsN-Channel34m Ω @ 6.1A, 4.5V600mV @ 1mA (Min)-4.6A Ta12nC @ 4.5V45ns-2.5V 4.5V±12V30 ns40 ns4.6A4V12V30V---4 VUnknownNoROHS3 Compliant---SILICONe3yes6EAR99-FET General Purpose PowerDUALGULL WING260306-ENHANCEMENT MODE----Matte Tin (Sn)SWITCHING0.034Ohm-
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Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66--55°C~150°C TJTape & Reel (TR)TrenchFET®2013Obsolete1 (Unlimited)--MOSFET (Metal Oxide)11.25W Ta 1.5W TcSingle1.25W-N-Channel50m Ω @ 3.8A, 10V3V @ 250μA305pF @ 15V4.2A Tc10.6nC @ 10V--4.5V 10V±20V--3.8A-20V30V-----NoROHS3 Compliant---SILICONe3yes6EAR99-FET General Purpose PowersDUALGULL WING260306-ENHANCEMENT MODE----PURE MATTE TINSWITCHING0.05Ohm4.2A
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