SI3424BDV-T1-E3

Vishay Siliconix SI3424BDV-T1-E3

Part Number:
SI3424BDV-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2490872-SI3424BDV-T1-E3
Description:
MOSFET N-CH 30V 8A 6TSOP
ECAD Model:
Datasheet:
SI3424BDV-T1-E3

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Specifications
Vishay Siliconix SI3424BDV-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3424BDV-T1-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Supplier Device Package
    6-TSOP
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2012
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    2.1W Ta 2.98W Tc
  • Element Configuration
    Single
  • Power Dissipation
    2.1W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    28mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    735pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19.6nC @ 10V
  • Rise Time
    85ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    17 ns
  • Continuous Drain Current (ID)
    8A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance
    735pF
  • Drain to Source Resistance
    28mOhm
  • Rds On Max
    28 mΩ
  • Nominal Vgs
    3 V
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SI3424BDV-T1-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 735pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 28mOhm.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI3424BDV-T1-E3 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 28mOhm
a threshold voltage of 3V
a 30V drain to source voltage (Vdss)


SI3424BDV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3424BDV-T1-E3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI3424BDV-T1-E3 More Descriptions
N CHANNEL MOSFET, 30V, 8A, TSOP
MOSFET N-CH 30V 8A 6TSOP
N-CHANNEL 30-V (D-S) MOSFET
OEMs, CMs ONLY (NO BROKERS)
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:8000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.038ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:2.1W ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SI3424BDV-T1-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Contact Plating
    Weight
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Channels
    Operating Mode
    Height
    Length
    Width
    Lead Free
    Terminal Finish
    Transistor Application
    Drain-source On Resistance-Max
    Drain Current-Max (Abs) (ID)
    View Compare
  • SI3424BDV-T1-E3
    SI3424BDV-T1-E3
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    6-TSOP
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    2.1W Ta 2.98W Tc
    Single
    2.1W
    18 ns
    N-Channel
    28mOhm @ 7A, 10V
    3V @ 250μA
    735pF @ 15V
    8A Tc
    19.6nC @ 10V
    85ns
    30V
    4.5V 10V
    ±20V
    12 ns
    17 ns
    8A
    3V
    20V
    30V
    735pF
    28mOhm
    28 mΩ
    3 V
    Unknown
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI3443BDV-T1-E3
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    1.1W Ta
    Single
    1.1W
    22 ns
    P-Channel
    60m Ω @ 4.7A, 4.5V
    1.4V @ 250μA
    -
    3.6A Ta
    9nC @ 4.5V
    35ns
    20V
    2.5V 4.5V
    ±12V
    25 ns
    45 ns
    3.6A
    -1.4V
    12V
    -20V
    -
    -
    -
    -1.4 V
    No SVHC
    No
    ROHS3 Compliant
    14 Weeks
    Tin
    19.986414mg
    SILICON
    e3
    yes
    6
    EAR99
    60mOhm
    Other Transistors
    DUAL
    GULL WING
    260
    30
    6
    1
    ENHANCEMENT MODE
    990.6μm
    3.05mm
    1.65mm
    Lead Free
    -
    -
    -
    -
  • SI3434DV-T1-GE3
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    1.14W Ta
    Single
    2W
    21 ns
    N-Channel
    34m Ω @ 6.1A, 4.5V
    600mV @ 1mA (Min)
    -
    4.6A Ta
    12nC @ 4.5V
    45ns
    -
    2.5V 4.5V
    ±12V
    30 ns
    40 ns
    4.6A
    4V
    12V
    30V
    -
    -
    -
    4 V
    Unknown
    No
    ROHS3 Compliant
    -
    -
    -
    SILICON
    e3
    yes
    6
    EAR99
    -
    FET General Purpose Power
    DUAL
    GULL WING
    260
    30
    6
    -
    ENHANCEMENT MODE
    -
    -
    -
    -
    Matte Tin (Sn)
    SWITCHING
    0.034Ohm
    -
  • SI3454CDV-T1-GE3
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    1.25W Ta 1.5W Tc
    Single
    1.25W
    -
    N-Channel
    50m Ω @ 3.8A, 10V
    3V @ 250μA
    305pF @ 15V
    4.2A Tc
    10.6nC @ 10V
    -
    -
    4.5V 10V
    ±20V
    -
    -
    3.8A
    -
    20V
    30V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    SILICON
    e3
    yes
    6
    EAR99
    -
    FET General Purpose Powers
    DUAL
    GULL WING
    260
    30
    6
    -
    ENHANCEMENT MODE
    -
    -
    -
    -
    PURE MATTE TIN
    SWITCHING
    0.05Ohm
    4.2A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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