Vishay Siliconix SI2369DS-T1-GE3
- Part Number:
- SI2369DS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478000-SI2369DS-T1-GE3
- Description:
- MOSFET P-CH 30V 7.6A TO-236
- Datasheet:
- SI2369DS-T1-GE3
Vishay Siliconix SI2369DS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2369DS-T1-GE3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2015
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max1.25W Ta 2.5W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.25W
- Turn On Delay Time13 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs29m Ω @ 5.4A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1295pF @ 15V
- Current - Continuous Drain (Id) @ 25°C7.6A Tc
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time38 ns
- Continuous Drain Current (ID)-5.4A
- Threshold Voltage-1.2V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)7.6A
- Drain-source On Resistance-Max0.029Ohm
- Drain to Source Breakdown Voltage-30V
- Max Junction Temperature (Tj)150°C
- Height1.12mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI2369DS-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1295pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -5.4A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.A device can conduct a maximum continuous current of [7.6A] according to its drain current.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1.2V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI2369DS-T1-GE3 Features
a continuous drain current (ID) of -5.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 38 ns
a threshold voltage of -1.2V
a 30V drain to source voltage (Vdss)
SI2369DS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2369DS-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1295pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -5.4A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.A device can conduct a maximum continuous current of [7.6A] according to its drain current.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1.2V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI2369DS-T1-GE3 Features
a continuous drain current (ID) of -5.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 38 ns
a threshold voltage of -1.2V
a 30V drain to source voltage (Vdss)
SI2369DS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2369DS-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI2369DS-T1-GE3 More Descriptions
Single P-Channel 30 V 0.04 Ohm 17 nC 1.25 W Silicon SMT Mosfet - SOT-23
MOSFET, P CH, -30V, -7.6A, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -
Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P CH, -30V, -7.6A, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -
Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
The three parts on the right have similar specifications to SI2369DS-T1-GE3.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightREACH SVHCRadiation HardeningRoHS StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperatureElement ConfigurationRise TimeFall Time (Typ)Input CapacitanceDrain to Source ResistanceRds On MaxPbfree CodeTerminal FinishSubcategoryReach Compliance CodePin CountQualification StatusWeightLengthWidthView Compare
-
SI2369DS-T1-GE314 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3Active1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING260301SINGLE WITH BUILT-IN DIODE11.25W Ta 2.5W TcENHANCEMENT MODE1.25W13 nsP-ChannelSWITCHING29m Ω @ 5.4A, 10V2.5V @ 250μA1295pF @ 15V7.6A Tc36nC @ 10V30V4.5V 10V±20V38 ns-5.4A-1.2V20V7.6A0.029Ohm-30V150°C1.12mmNo SVHCNoROHS3 Compliant-------------------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33--55°C~150°C TJTape & Reel (TR)TrenchFET®2012-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)----1--710mW Ta-710mW-P-Channel-48mOhm @ 3.6A, 4.5V900mV @ 250μA780pF @ 6V3.2A Ta14nC @ 4.5V12V1.8V 4.5V±8V65 ns3.2A-8V--20V----ROHS3 CompliantSOT-23-3 (TO-236)150°C-55°CSingle35ns35 ns780pF48mOhm48 mΩ---------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING260301--750mW TaENHANCEMENT MODE750mW13 nsP-Channel-51m Ω @ 4A, 4.5V450mV @ 250μA (Min)1225pF @ 6V3.2A Ta15nC @ 4.5V-1.8V 4.5V±8V50 ns3.2A-8V-0.051Ohm12V----ROHS3 Compliant---Single-----yesMatte Tin (Sn)Other Transistorsunknown3Not Qualified---
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33--55°C~150°C TJTape & Reel (TR)TrenchFET®2012-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)------1710mW Ta--18 nsP-Channel-45mOhm @ 3.5A, 4.5V800mV @ 250μA970pF @ 4V3A Ta12nC @ 4.5V8V1.8V 4.5V±8V40 ns-3A-8V---8V-1.02mm--ROHS3 CompliantSOT-23-3150°C-55°CSingle45ns45 ns970pF45mOhm45 mΩ------1.437803g3.04mm1.4mm
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
30 November 2023
LM2576 Voltage Regulator Equivalents, Internal Structure, Working Principle and More
Ⅰ. What is LM2576 voltage regulator?Ⅱ. What are the features of LM2576 voltage regulator?Ⅲ. Pin configuration of LM2576 voltage regulatorⅣ. Internal structure of LM2576 voltage regulatorⅤ. How does... -
30 November 2023
LM358 Dual Operational Amplifier Symbol, Features, LM393 vs LM358 and Applications
Ⅰ. Overview of LM358 operational amplifierⅡ. Features of LM358 operational amplifierⅢ. Symbol, footprint and pin configuration of LM358Ⅳ. Internal structure of LM358 chipⅤ. Working principle of LM358 operational... -
01 December 2023
LM2575 Adjustable Voltage Regulator Manufacturer, Layout Guidelines, Applications and Other Details
Ⅰ. What is LM2575?Ⅱ. Manufacturer of LM2575 voltage regulatorⅢ. What are the features of LM2575 voltage regulator?Ⅳ. The pin configuration of LM2575 voltage regulatorⅤ. How does the LM2575... -
01 December 2023
KA3525A PWM Controller Symbol, Equivalents, Working Principle and Applications
Ⅰ. What is PWM controller?Ⅱ. Overview of KA3525A PWM controllerⅢ. KA3525A symbol, footprint and pin configurationⅣ. Technical parameters of KA3525AⅤ. How does the KA3525A PWM controller work?Ⅵ. What...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.