SI2369DS-T1-GE3

Vishay Siliconix SI2369DS-T1-GE3

Part Number:
SI2369DS-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2478000-SI2369DS-T1-GE3
Description:
MOSFET P-CH 30V 7.6A TO-236
ECAD Model:
Datasheet:
SI2369DS-T1-GE3

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Vishay Siliconix SI2369DS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2369DS-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2015
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    1.25W Ta 2.5W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.25W
  • Turn On Delay Time
    13 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    29m Ω @ 5.4A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1295pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    7.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    36nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    38 ns
  • Continuous Drain Current (ID)
    -5.4A
  • Threshold Voltage
    -1.2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7.6A
  • Drain-source On Resistance-Max
    0.029Ohm
  • Drain to Source Breakdown Voltage
    -30V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.12mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SI2369DS-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1295pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -5.4A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.A device can conduct a maximum continuous current of [7.6A] according to its drain current.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1.2V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI2369DS-T1-GE3 Features
a continuous drain current (ID) of -5.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 38 ns
a threshold voltage of -1.2V
a 30V drain to source voltage (Vdss)


SI2369DS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2369DS-T1-GE3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI2369DS-T1-GE3 More Descriptions
Single P-Channel 30 V 0.04 Ohm 17 nC 1.25 W Silicon SMT Mosfet - SOT-23
MOSFET, P CH, -30V, -7.6A, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -
Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Product Comparison
The three parts on the right have similar specifications to SI2369DS-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Rise Time
    Fall Time (Typ)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Pbfree Code
    Terminal Finish
    Subcategory
    Reach Compliance Code
    Pin Count
    Qualification Status
    Weight
    Length
    Width
    View Compare
  • SI2369DS-T1-GE3
    SI2369DS-T1-GE3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    1
    SINGLE WITH BUILT-IN DIODE
    1
    1.25W Ta 2.5W Tc
    ENHANCEMENT MODE
    1.25W
    13 ns
    P-Channel
    SWITCHING
    29m Ω @ 5.4A, 10V
    2.5V @ 250μA
    1295pF @ 15V
    7.6A Tc
    36nC @ 10V
    30V
    4.5V 10V
    ±20V
    38 ns
    -5.4A
    -1.2V
    20V
    7.6A
    0.029Ohm
    -30V
    150°C
    1.12mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI2331DS-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1
    -
    -
    710mW Ta
    -
    710mW
    -
    P-Channel
    -
    48mOhm @ 3.6A, 4.5V
    900mV @ 250μA
    780pF @ 6V
    3.2A Ta
    14nC @ 4.5V
    12V
    1.8V 4.5V
    ±8V
    65 ns
    3.2A
    -
    8V
    -
    -
    20V
    -
    -
    -
    -
    ROHS3 Compliant
    SOT-23-3 (TO-236)
    150°C
    -55°C
    Single
    35ns
    35 ns
    780pF
    48mOhm
    48 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI2335DS-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    1
    -
    -
    750mW Ta
    ENHANCEMENT MODE
    750mW
    13 ns
    P-Channel
    -
    51m Ω @ 4A, 4.5V
    450mV @ 250μA (Min)
    1225pF @ 6V
    3.2A Ta
    15nC @ 4.5V
    -
    1.8V 4.5V
    ±8V
    50 ns
    3.2A
    -
    8V
    -
    0.051Ohm
    12V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    Single
    -
    -
    -
    -
    -
    yes
    Matte Tin (Sn)
    Other Transistors
    unknown
    3
    Not Qualified
    -
    -
    -
  • SI2311DS-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    710mW Ta
    -
    -
    18 ns
    P-Channel
    -
    45mOhm @ 3.5A, 4.5V
    800mV @ 250μA
    970pF @ 4V
    3A Ta
    12nC @ 4.5V
    8V
    1.8V 4.5V
    ±8V
    40 ns
    -3A
    -
    8V
    -
    -
    -8V
    -
    1.02mm
    -
    -
    ROHS3 Compliant
    SOT-23-3
    150°C
    -55°C
    Single
    45ns
    45 ns
    970pF
    45mOhm
    45 mΩ
    -
    -
    -
    -
    -
    -
    1.437803g
    3.04mm
    1.4mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.