Vishay Siliconix SI2333DDS-T1-GE3
- Part Number:
- SI2333DDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2484704-SI2333DDS-T1-GE3
- Description:
- MOSFET P-CH 12V 6A SOT23
- Datasheet:
- SI2333DDS-T1-GE3
Vishay Siliconix SI2333DDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2333DDS-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingDigi-Reel®
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.2W Ta 1.7W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.2W
- Turn On Delay Time26 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs28m Ω @ 5A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1275pF @ 6V
- Current - Continuous Drain (Id) @ 25°C6A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 8V
- Rise Time24ns
- Drain to Source Voltage (Vdss)12V
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)-5A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)6A
- Drain-source On Resistance-Max0.028Ohm
- Drain to Source Breakdown Voltage-12V
- Max Junction Temperature (Tj)150°C
- Height1.12mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI2333DDS-T1-GE3 Overview
The maximum input capacitance of this device is 1275pF @ 6V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -5A.When VGS=-12V, and ID flows to VDS at -12VVDS, the drain-source breakdown voltage is -12V in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 45 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 26 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 12V in order to operate.Using drive voltage (1.5V 4.5V), this device helps reduce its power consumption.
SI2333DDS-T1-GE3 Features
a continuous drain current (ID) of -5A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 45 ns
a threshold voltage of -1V
a 12V drain to source voltage (Vdss)
SI2333DDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2333DDS-T1-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1275pF @ 6V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -5A.When VGS=-12V, and ID flows to VDS at -12VVDS, the drain-source breakdown voltage is -12V in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 45 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 26 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 12V in order to operate.Using drive voltage (1.5V 4.5V), this device helps reduce its power consumption.
SI2333DDS-T1-GE3 Features
a continuous drain current (ID) of -5A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 45 ns
a threshold voltage of -1V
a 12V drain to source voltage (Vdss)
SI2333DDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2333DDS-T1-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SI2333DDS-T1-GE3 More Descriptions
SI2333DDS-T1-GE3 P-channel MOSFET Transistor, 6 A, 12 V, 3-Pin SOT-23 | Siliconix / Vishay SI2333DDS-T1-GE3
Single P-Channel 12 V 0.028 O 35 nC Surface Mount Power Mosfet - SOT-23
Small Signal Field-Effect Transistor, 6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P-CH, 12V, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:1.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to 150°C
Single P-Channel 12 V 0.028 O 35 nC Surface Mount Power Mosfet - SOT-23
Small Signal Field-Effect Transistor, 6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P-CH, 12V, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:1.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to 150°C
The three parts on the right have similar specifications to SI2333DDS-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureForward VoltageInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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SI2333DDS-T1-GE314 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJDigi-Reel®TrenchFET®2013e3Active1 (Unlimited)3EAR99Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING26030111.2W Ta 1.7W TcSingleENHANCEMENT MODE1.2W26 nsP-ChannelSWITCHING28m Ω @ 5A, 4.5V1V @ 250μA1275pF @ 6V6A Tc35nC @ 8V24ns12V1.5V 4.5V±8V20 ns45 ns-5A-1V8V6A0.028Ohm-12V150°C1.12mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free--------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-1.437803g--55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----1700mW TaSingle-900mW7 nsN-Channel-60mOhm @ 3.6A, 4.5V1.2V @ 50μA300pF @ 10V2.1A Ta10nC @ 4.5V55ns20V2.5V 4.5V±8V55 ns16 ns2.1A-8V--20V-1.02mm3.04mm1.4mm--ROHS3 Compliant-SOT-23-3 (TO-236)150°C-55°C760mV300pF60mOhm60 mΩ
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803g--55°C~150°C TJTape & Reel (TR)TrenchFET®2016-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----11710mW TaSingle-710mW18 nsP-Channel-45mOhm @ 3.5A, 4.5V800mV @ 250μA970pF @ 4V3A Ta12nC @ 4.5V45ns8V1.8V 4.5V±8V45 ns40 ns-3A-8V----1.02mm3.04mm1.4mm--ROHS3 Compliant-SOT-23-3150°C-55°C-970pF45mOhm45 mΩ
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803g--55°C~150°C TJTape & Reel (TR)TrenchFET®2012-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----1710mW TaSingle--18 nsP-Channel-45mOhm @ 3.5A, 4.5V800mV @ 250μA970pF @ 4V3A Ta12nC @ 4.5V45ns8V1.8V 4.5V±8V45 ns40 ns-3A-8V---8V-1.02mm3.04mm1.4mm--ROHS3 Compliant-SOT-23-3150°C-55°C-970pF45mOhm45 mΩ
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