Vishay Siliconix SI2328DS-T1-E3

Name: SI2328DS-T1-E3
Brand: Vishay Siliconix
SKU: 3070072-SI2328DS-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2328DS-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 3070072-SI2328DS-T1-E3

Description:: MOSFET N-CH 100V 1.15A SOT23-3

ECAD Model:

Datasheet:: SI2328DS-T1-E3

Specifications

Vishay Siliconix SI2328DS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2328DS-T1-E3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
250mOhm
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
730mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
730mW
Turn On Delay Time
7 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
250m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Current - Continuous Drain (Id) @ 25°C
1.15A Ta
Gate Charge (Qg) (Max) @ Vgs
5nC @ 10V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
9 ns
Continuous Drain Current (ID)
1.15A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
2 V
Height
1.12mm
Length
3.04mm
Width
1.4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI2328DS-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.15A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 9 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

SI2328DS-T1-E3 Features
a continuous drain current (ID) of 1.15A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 9 ns
a threshold voltage of 4V

SI2328DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2328DS-T1-E3 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

SI2328DS-T1-E3 More Descriptions

Single N-Channel 100 V 0.25 Ohms Surface Mount Power Mosfet - SOT-23
100V 1.15A 250m´Î@10V1.5A 730mW 4V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 1.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:730mW; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:1.15A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to SI2328DS-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Reach Compliance Code

Qualification Status

Input Capacitance (Ciss) (Max) @ Vds

Drain-source On Resistance-Max

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
SI2328DS-T1-E3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

250mOhm

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

730mW Ta

Single

ENHANCEMENT MODE

730mW

7 ns

N-Channel

250m Ω @ 1.5A, 10V

4V @ 250μA

1.15A Ta

5nC @ 10V

11ns

10V

±20V

11 ns

9 ns

1.15A

4V

20V

100V

150°C

2 V

1.12mm

3.04mm

1.4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
SI2335DS-T1-GE3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

-

750mW Ta

Single

ENHANCEMENT MODE

750mW

13 ns

P-Channel

51m Ω @ 4A, 4.5V

450mV @ 250μA (Min)

3.2A Ta

15nC @ 4.5V

-

1.8V 4.5V

±8V

-

50 ns

3.2A

-

8V

12V

-

-

-

-

-

-

-

ROHS3 Compliant

-

Matte Tin (Sn)

unknown

Not Qualified

1225pF @ 6V

0.051Ohm

-

-

-

-

-

-

-

SI2328DS-T1-E3 vs SI2335DS-T1-GE3
SI2323DS-T1

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

750mW Ta

Single

-

1.25W

25 ns

P-Channel

39mOhm @ 4.7A, 4.5V

1V @ 250μA

3.7A Ta

19nC @ 4.5V

43ns

1.8V 4.5V

±8V

43 ns

71 ns

3.7A

-

8V

-20V

-

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

-

-

-

1020pF @ 10V

-

SOT-23-3 (TO-236)

150°C

-55°C

20V

1.02nF

39mOhm

39 mΩ

SI2328DS-T1-E3 vs SI2323DS-T1
SI2311DS-T1-GE3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

710mW Ta

Single

-

-

18 ns

P-Channel

45mOhm @ 3.5A, 4.5V

800mV @ 250μA

3A Ta

12nC @ 4.5V

45ns

1.8V 4.5V

±8V

45 ns

40 ns

-3A

-

8V

-8V

-

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

-

-

-

970pF @ 4V

-

SOT-23-3

150°C

-55°C

8V

970pF

45mOhm

45 mΩ

SI2328DS-T1-E3 vs SI2311DS-T1-GE3

Certification

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SI2328DS-T1-E3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R RoHS: Compliant	110	1 $0.7139 10 $0.6133 25 $0.594 100 $0.4892 250 $0.4748
SI2328DS-T1-E3 DISTI #	Vishay Siliconix	MOSFET N-CH 100V 1.15A SOT23-3 RoHS: Compliant	54123	1 $0.78 10 $0.683 100 $0.5268 500 $0.39022 1000 $0.31217
SI2328DS-T1-E3 DISTI #	Vishay Siliconix	MOSFET N-CH 100V 1.15A SOT23-3 RoHS: Compliant	54123	1 $0.78 10 $0.683 100 $0.5268 500 $0.39022 1000 $0.31217
SI2328DS-T1-E3 DISTI #	Vishay Siliconix	MOSFET N-CH 100V 1.15A SOT23-3 RoHS: Compliant	54000	3000 $0.27466
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R RoHS: Compliant	8990	60 $0.2843 100 $0.2321 500 $0.1963 1000 $0.1734
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R RoHS: Compliant	135	14 $0.6133 25 $0.5937 100 $0.4892 250 $0.4748
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R RoHS: Compliant	44	16 $1.6625
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.15A 3-Pin TO-236 T/R (Alt RoHS: Compliant	0
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.15A 3-Pin TO-236 T/R - Ta RoHS: Not Compliant	0	3000 $0.2229 6000 $0.2129 12000 $0.2039 18000 $0.1959 30000 $0.1879
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.15A 3-Pin TO-236 T/R - Ta RoHS: Not Compliant	0	1 $0.421
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.15A 3-Pin TO-236 T/R - Pr RoHS: Not Compliant	0	1 $0.85 25 $0.677 50 $0.596 100 $0.514 250 $0.47 500 $0.425 1000 $0.379
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, Transistor Polarity:N Channel,	3345	1 $0.85 25 $0.677 50 $0.596 100 $0.514 250 $0.47 500 $0.425 1000 $0.379
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, FULL REEL, Transistor Polarity:	3000	1 $0.421 3000 $0.406 6000 $0.385 12000 $0.37 18000 $0.366 30000 $0.362
SI2328DS-T1-E3. DISTI #	Vishay Intertechnologies	N-CHANNEL 100-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1 $0.429 3000 $0.414 6000 $0.385 12000 $0.37 18000 $0.366 30000 $0.362
SI2328DS-T1-E3 DISTI #	Vishay Siliconix	SI2328DS-T1-E3 N-channel MOSFET Transistor, 1.15 RoHS: Compliant	0	3000 $0.47
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	Single N-Channel 100 V 0.25 Ohms Surface Mount Pow RoHS: Compliant	51000	3000 $0.26
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	Single N-Channel 100 V 0.25 Ohms Surface Mount Pow RoHS: Compliant	220	1 $0.4 250 $0.32 500 $0.31 750 $0.305 1500 $0.29
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs SOT-23 RoHS: Compliant	20717	1 $0.85 10 $0.677 100 $0.514 500 $0.425 1000 $0.34 3000 $0.308 6000 $0.287 9000 $0.276 24000 $0.266
SI2328DS-T1 DISTI #	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs SOT-23 RoHS: Not Compliant	0
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 100V 1.15A TO236, PK	590	10 $0.525 50 $0.479 100 $0.391 250 $0.364 500 $0.308
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 100V 1.15A TO236, RL	6110	50 $0.479 100 $0.391 250 $0.364 500 $0.308
SI2328DST1E3 DISTI #	Vishay Intertechnologies	RoHS: Compliant	3000
SI2328DS-T1-E3 DISTI #	Vishay Siliconix	RoHS: Compliant	220071	3000 $0.52 220071 $0.4727
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFETs	44	1 $1.33 10 $0.356
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFETs RoHS: Compliant	8990	10 $0.334 500 $0.154 3000 $0.124
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFETs RoHS: Compliant	336	10 $0.668 100 $0.4892 250 $0.4748
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N, SOT-23 RoHS: Compliant	0	1 $1.24 10 $1.09 100 $0.834 500 $0.618 1000 $0.593
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N, SOT-23 RoHS: Compliant	3345	1 $1.24 10 $1.09 100 $0.834 500 $0.618 1000 $0.593
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, FULL REEL RoHS: Compliant	3000	3000 $1.59 6000 $1.22 9000 $0.979
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N, SOT-23 RoHS: Compliant	3307	1 $0.474 25 $0.446 100 $0.34 250 $0.324 500 $0.274
SI2328DS-T1-E3. DISTI #	Vishay Intertechnologies	MOSFET 100V 1.5A RoHS: Compliant	1800	25 $0.29
SI2328DS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs SOT-23 RoHS: Compliant	159000

SI2328D~~(6)~~
SI2328~~(6)~~
SI232~~(33)~~
SI23~~(173)~~
SI2~~(196)~~

Vishay Siliconix SI2328DS-T1-E3

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