Vishay Siliconix SI2323DS-T1-GE3

Name: SI2323DS-T1-GE3
Brand: Vishay Siliconix
SKU: 2478057-SI2323DS-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2323DS-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478057-SI2323DS-T1-GE3

Description:: MOSFET P-CH 20V 3.7A SOT23-3

ECAD Model:

Datasheet:: SI2323DS-T1-GE3

Specifications

Vishay Siliconix SI2323DS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2323DS-T1-GE3.

Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3 (TO-236)
Weight
1.437803g
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2015
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
39mOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
750mW Ta
Element Configuration
Single
Power Dissipation
750mW
Turn On Delay Time
25 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
39mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1020pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.7A Ta
Gate Charge (Qg) (Max) @ Vgs
19nC @ 4.5V
Rise Time
43ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
43 ns
Turn-Off Delay Time
71 ns
Continuous Drain Current (ID)
-4.7A
Threshold Voltage
-1V
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-20V
Input Capacitance
1.02nF
Drain to Source Resistance
39mOhm
Rds On Max
39 mΩ
Nominal Vgs
-1 V
Height
1.02mm
Length
3.04mm
Width
1.4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI2323DS-T1-GE3 Overview
The maximum input capacitance of this device is 1020pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -4.7A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 71 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 39mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.

SI2323DS-T1-GE3 Features
a continuous drain current (ID) of -4.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 71 ns
single MOSFETs transistor is 39mOhm
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)

SI2323DS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2323DS-T1-GE3 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

SI2323DS-T1-GE3 More Descriptions

20V 3.7A 39m´Î@4.5V4.7A 750mW 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
Single P-Channel 20 V 0.039 O 19 nC Surface Mount Power Mosfet - SOT-23
Small Signal Field-Effect Transistor, 0.38A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-4700mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.068ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V ;RoHS Compliant: Yes
MOSFET, P CH, 20V, 4.7A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.039ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:750mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; Operating Temperature Range:-55°C to 150°C

Product Comparison

The three parts on the right have similar specifications to SI2323DS-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Operating Mode

Transistor Application

Drain Current-Max (Abs) (ID)

Reach Compliance Code

Qualification Status

Drain-source On Resistance-Max

View Compare
SI2323DS-T1-GE3

Vishay Siliconix

19 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3 (TO-236)

1.437803g

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2015

Not For New Designs

1 (Unlimited)

39mOhm

150°C

-55°C

MOSFET (Metal Oxide)

1

1

750mW Ta

Single

750mW

25 ns

P-Channel

39mOhm @ 4.7A, 4.5V

1V @ 250μA

1020pF @ 10V

3.7A Ta

19nC @ 4.5V

43ns

20V

1.8V 4.5V

±8V

43 ns

71 ns

-4.7A

-1V

8V

-20V

1.02nF

39mOhm

39 mΩ

-1 V

1.02mm

3.04mm

1.4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI2305ADS-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-

-50°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2015

Obsolete

1 (Unlimited)

40mOhm

-

-

MOSFET (Metal Oxide)

1

-

960mW Ta 1.7W Tc

Single

-

-

P-Channel

40m Ω @ 4.1A, 4.5V

800mV @ 250μA

740pF @ 4V

5.4A Tc

15nC @ 4.5V

11ns

-

1.8V 4.5V

±8V

11 ns

22 ns

4.1A

-

8V

-8V

-

-

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

SILICON

e3

yes

3

EAR99

MATTE TIN

Other Transistors

DUAL

GULL WING

260

30

3

ENHANCEMENT MODE

SWITCHING

5.4A

-

-

-

SI2323DS-T1-GE3 vs SI2305ADS-T1-E3
SI2331DS-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3 (TO-236)

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

Obsolete

1 (Unlimited)

-

150°C

-55°C

MOSFET (Metal Oxide)

1

-

710mW Ta

Single

710mW

-

P-Channel

48mOhm @ 3.6A, 4.5V

900mV @ 250μA

780pF @ 6V

3.2A Ta

14nC @ 4.5V

35ns

12V

1.8V 4.5V

±8V

35 ns

65 ns

3.2A

-

8V

20V

780pF

48mOhm

48 mΩ

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SI2323DS-T1-GE3 vs SI2331DS-T1-E3
SI2335DS-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

-

750mW Ta

Single

750mW

13 ns

P-Channel

51m Ω @ 4A, 4.5V

450mV @ 250μA (Min)

1225pF @ 6V

3.2A Ta

15nC @ 4.5V

-

-

1.8V 4.5V

±8V

-

50 ns

3.2A

-

8V

12V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

SILICON

e3

yes

3

EAR99

Matte Tin (Sn)

Other Transistors

DUAL

GULL WING

260

30

3

ENHANCEMENT MODE

-

-

unknown

Not Qualified

0.051Ohm

SI2323DS-T1-GE3 vs SI2335DS-T1-GE3

Certification

Related parts for SI2323DS-T1-GE3

SI2303CDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 2.7A SOT23-3
SI2305ADS-T1-E3

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SI2331DS-T1-E3

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SI2311DS-T1-GE3

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SI2305ADS-T1-GE3

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SI2323DS-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2323DS-T1-GE3 DISTI #V72:2272_07434936	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant	54	1 $0.6442 10 $0.5729 25 $0.4688
SI2323DS-T1-GE3 DISTI #V36:1790_07434936	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000 $0.4227
SI2323DS-T1-GE3 DISTI #SI2323DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 3.7A SOT23-3 RoHS: Compliant	18754	1 $0.59 10 $0.524 100 $0.4014 500 $0.31732 1000 $0.25385
SI2323DS-T1-GE3 DISTI #SI2323DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 3.7A SOT23-3 RoHS: Compliant	18754	1 $0.59 10 $0.524 100 $0.4014 500 $0.31732 1000 $0.25385
SI2323DS-T1-GE3 DISTI #SI2323DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 3.7A SOT23-3 RoHS: Compliant	18000	3000 $0.23875 6000 $0.22335 15000 $0.20795 30000 $0.19716
SI2323DS-T1-GE3 DISTI #32371349	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant	3000	3000 $0.3156
SI2323DS-T1-GE3 DISTI #32878336	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant	2850	137 $0.5615
SI2323DS-T1-GE3 DISTI #30331539	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant	54	21 $0.6442
SI2323DS-T1-GE3 DISTI #SI2323DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R - Tape RoHS: Not Compliant	0	3000 $0.3079 6000 $0.2989 12000 $0.2869 18000 $0.2789 30000 $0.2719
SI2323DS-T1-GE3 DISTI #SI2323DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R (Alt: RoHS: Compliant	0	3000 $0.4799 6000 $0.3279 12000 $0.2819 18000 $0.2599 30000 $0.2419
SI2323DS-T1-GE3 DISTI #SI2323DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R (Alt: RoHS: Compliant	0
SI2323DS-T1-GE3 DISTI #16P3711	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R - Prod RoHS: Not Compliant	0	1 $1.06 25 $0.846 50 $0.745 100 $0.643 250 $0.588 500 $0.531 1000 $0.456
SI2323DS-T1-GE3 DISTI #71T8046	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R - Tape RoHS: Not Compliant	0	1 $0.488 6000 $0.464 12000 $0.445
SI2323DS-T1-GE3 DISTI #16P3711	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 4.7A TO-236, Transistor P	0	1 $0.365 25 $0.365 50 $0.365 100 $0.365
SI2323DS-T1-GE3 DISTI #71T8046	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 4.7A TO-236, FULL REEL, T	3000	1 $0.649 3000 $0.649
SI2323DS-T1-GE3 DISTI #70459506	Vishay Siliconix	20V 4.7A 1.25W 39 mohms @ 4.5V RoHS: Compliant	0	3000 $0.662 6000 $0.626
SI2323DS-T1-GE3 DISTI #	Vishay Intertechnologies	Single P-Channel 20 V 0.039 O 19 nC Surface Mount RoHS: Compliant	6000	3000 $0.225
SI2323DS-T1-GE3 DISTI #781-SI2323DS-T1-GE3	Vishay Intertechnologies	MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V RoHS: Compliant	19116	1 $0.84 10 $0.676 100 $0.513 500 $0.424 1000 $0.339 3000 $0.307 6000 $0.286 9000 $0.275 24000 $0.266
SI2323DS-T1-GE3 DISTI #	Vishay Siliconix	3700MA, 20V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET,	5	1 $0.48
SI2323DST1GE3 DISTI #	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 3.7A I(D), 2 RoHS: Compliant	855
SI2323DS-T1-GE3 DISTI #2371204	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 4.7A TO-236, FULL REEL RoHS: Compliant	3000	3000 $0.57
SI2323DS-T1-GE3 DISTI #XSFP00000063440	Vishay Siliconix	RoHS: Compliant	6000	3000 $0.3214 6000 $0.3
SI2323DS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V RoHS: Compliant	6000
SI2323DS-T1-GE3 DISTI #2371204	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 4.7A TO-236, FUL	3000	3000 $0.588

SI2323D~~(6)~~
SI2323~~(9)~~
SI232~~(33)~~
SI23~~(173)~~
SI2~~(196)~~

Vishay Siliconix SI2323DS-T1-GE3

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