Vishay Siliconix SI2323CDS-T1-GE3
- Part Number:
- SI2323CDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2483469-SI2323CDS-T1-GE3
- Description:
- MOSFET P-CH 20V 6A SOT-23
- Datasheet:
- SI2323CDS-T1-GE3
Vishay Siliconix SI2323CDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2323CDS-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance39mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.25W Ta 2.5W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.25W
- Turn On Delay Time15 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs39m Ω @ 4.6A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1090pF @ 10V
- Current - Continuous Drain (Id) @ 25°C6A Tc
- Gate Charge (Qg) (Max) @ Vgs25nC @ 4.5V
- Rise Time23ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)-4.6A
- Threshold Voltage-400mV
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)6A
- Drain to Source Breakdown Voltage-20V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs-400 mV
- Height1.12mm
- Length3.04mm
- Width1.4mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI2323CDS-T1-GE3 Overview
The maximum input capacitance of this device is 1090pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -4.6A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -400mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
SI2323CDS-T1-GE3 Features
a continuous drain current (ID) of -4.6A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 40 ns
a threshold voltage of -400mV
a 20V drain to source voltage (Vdss)
SI2323CDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2323CDS-T1-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1090pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -4.6A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.As shown in the table below, the drain current of this device is 6A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 40 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -400mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
SI2323CDS-T1-GE3 Features
a continuous drain current (ID) of -4.6A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 40 ns
a threshold voltage of -400mV
a 20V drain to source voltage (Vdss)
SI2323CDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2323CDS-T1-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SI2323CDS-T1-GE3 More Descriptions
P-Channel 20 V 0.039 Ohm 2.5 W Surface Mount Power Mosfet - SOT-23-3
MOSFET P-CH 20V 6A SOT-23 / Trans MOSFET P-CH 20V 4.6A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P CH, -20V, -6A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
MOSFET P-CH 20V 6A SOT-23 / Trans MOSFET P-CH 20V 4.6A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P CH, -20V, -6A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-
The three parts on the right have similar specifications to SI2323CDS-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxForward VoltageView Compare
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SI2323CDS-T1-GE314 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)3EAR9939mOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260303111.25W Ta 2.5W TcSingleENHANCEMENT MODE1.25W15 nsP-ChannelSWITCHING39m Ω @ 4.6A, 4.5V1V @ 250μA1090pF @ 10V6A Tc25nC @ 4.5V23ns20V1.8V 4.5V±8V12 ns40 ns-4.6A-400mV8V6A-20V150°C-400 mV1.12mm3.04mm1.4mmUnknownNoROHS3 CompliantLead Free--------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33---55°C~150°C TJTape & Reel (TR)TrenchFET®2012--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-----1-710mW TaSingle-710mW-P-Channel-48mOhm @ 3.6A, 4.5V900mV @ 250μA780pF @ 6V3.2A Ta14nC @ 4.5V35ns12V1.8V 4.5V±8V35 ns65 ns3.2A-8V-20V-------ROHS3 Compliant-SOT-23-3 (TO-236)150°C-55°C780pF48mOhm48 mΩ-
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14 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)3EAR99-Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING26030311860mW Ta 1.6W TcSingleENHANCEMENT MODE860mW11 nsP-ChannelSWITCHING112m Ω @ 2.8A, 4.5V1V @ 250μA405pF @ 10V3.1A Tc10nC @ 4.5V35ns20V2.5V 4.5V±8V35 ns30 ns-2.3A-1V8V--20V150°C-1.12mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-1.437803g--55°C~150°C TJTape & Reel (TR)----Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)------1700mW TaSingle-900mW7 nsN-Channel-60mOhm @ 3.6A, 4.5V1.2V @ 50μA300pF @ 10V2.1A Ta10nC @ 4.5V55ns20V2.5V 4.5V±8V55 ns16 ns2.1A-8V-20V--1.02mm3.04mm1.4mm--ROHS3 Compliant-SOT-23-3 (TO-236)150°C-55°C300pF60mOhm60 mΩ760mV
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