SI2316DS-T1-E3

Vishay Siliconix SI2316DS-T1-E3

Part Number:
SI2316DS-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2480681-SI2316DS-T1-E3
Description:
MOSFET N-CH 30V 2.9A SOT23-3
ECAD Model:
Datasheet:
SI2316DS-T1-E3

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Specifications
Vishay Siliconix SI2316DS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2316DS-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    1.437803g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    50mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    30V
  • Power Dissipation-Max
    700mW Ta
  • Element Configuration
    Single
  • Current
    2A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    700mW
  • Turn On Delay Time
    9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 3.4A, 10V
  • Vgs(th) (Max) @ Id
    800mV @ 250μA (Min)
  • Input Capacitance (Ciss) (Max) @ Vds
    215pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    2.9A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    7nC @ 10V
  • Rise Time
    9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    14 ns
  • Continuous Drain Current (ID)
    3.4A
  • Gate to Source Voltage (Vgs)
    20V
  • Nominal Vgs
    800 mV
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI2316DS-T1-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 215pF @ 15V.This device conducts a continuous drain current (ID) of 3.4A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 14 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SI2316DS-T1-E3 Features
a continuous drain current (ID) of 3.4A
the turn-off delay time is 14 ns


SI2316DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2316DS-T1-E3 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
SI2316DS-T1-E3 More Descriptions
Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - TO-236
30V 2.9A 50m´Î@10V3.4A 700mW 800mV@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; On Resistance Rds(On):0.05Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:800Mv Rohs Compliant: No
Product Comparison
The three parts on the right have similar specifications to SI2316DS-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI2316DS-T1-E3
    SI2316DS-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    50mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    3
    1
    1
    30V
    700mW Ta
    Single
    2A
    ENHANCEMENT MODE
    700mW
    9 ns
    N-Channel
    SWITCHING
    50m Ω @ 3.4A, 10V
    800mV @ 250μA (Min)
    215pF @ 15V
    2.9A Ta
    7nC @ 10V
    9ns
    4.5V 10V
    ±20V
    9 ns
    14 ns
    3.4A
    20V
    800 mV
    1.02mm
    3.04mm
    1.4mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI2301CDS-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    3
    1
    1
    -
    860mW Ta 1.6W Tc
    Single
    -
    ENHANCEMENT MODE
    860mW
    11 ns
    P-Channel
    SWITCHING
    112m Ω @ 2.8A, 4.5V
    1V @ 250μA
    405pF @ 10V
    3.1A Tc
    10nC @ 4.5V
    35ns
    2.5V 4.5V
    ±8V
    35 ns
    30 ns
    -2.3A
    8V
    -
    1.12mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    20V
    -1V
    -20V
    150°C
    -
    -
    -
    -
    -
    -
  • SI2311DS-T1-E3
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    1
    -
    710mW Ta
    Single
    -
    -
    710mW
    18 ns
    P-Channel
    -
    45mOhm @ 3.5A, 4.5V
    800mV @ 250μA
    970pF @ 4V
    3A Ta
    12nC @ 4.5V
    45ns
    1.8V 4.5V
    ±8V
    45 ns
    40 ns
    -3A
    8V
    -
    1.02mm
    3.04mm
    1.4mm
    -
    -
    ROHS3 Compliant
    -
    8V
    -
    -
    -
    SOT-23-3
    150°C
    -55°C
    970pF
    45mOhm
    45 mΩ
  • SI2311DS-T1-GE3
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    -
    710mW Ta
    Single
    -
    -
    -
    18 ns
    P-Channel
    -
    45mOhm @ 3.5A, 4.5V
    800mV @ 250μA
    970pF @ 4V
    3A Ta
    12nC @ 4.5V
    45ns
    1.8V 4.5V
    ±8V
    45 ns
    40 ns
    -3A
    8V
    -
    1.02mm
    3.04mm
    1.4mm
    -
    -
    ROHS3 Compliant
    -
    8V
    -
    -8V
    -
    SOT-23-3
    150°C
    -55°C
    970pF
    45mOhm
    45 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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