Vishay Siliconix SI2316DS-T1-E3
- Part Number:
- SI2316DS-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2480681-SI2316DS-T1-E3
- Description:
- MOSFET N-CH 30V 2.9A SOT23-3
- Datasheet:
- SI2316DS-T1-E3
Vishay Siliconix SI2316DS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2316DS-T1-E3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance50mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Number of Elements1
- Number of Channels1
- Voltage30V
- Power Dissipation-Max700mW Ta
- Element ConfigurationSingle
- Current2A
- Operating ModeENHANCEMENT MODE
- Power Dissipation700mW
- Turn On Delay Time9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 3.4A, 10V
- Vgs(th) (Max) @ Id800mV @ 250μA (Min)
- Input Capacitance (Ciss) (Max) @ Vds215pF @ 15V
- Current - Continuous Drain (Id) @ 25°C2.9A Ta
- Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
- Rise Time9ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)3.4A
- Gate to Source Voltage (Vgs)20V
- Nominal Vgs800 mV
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI2316DS-T1-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 215pF @ 15V.This device conducts a continuous drain current (ID) of 3.4A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 14 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SI2316DS-T1-E3 Features
a continuous drain current (ID) of 3.4A
the turn-off delay time is 14 ns
SI2316DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2316DS-T1-E3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 215pF @ 15V.This device conducts a continuous drain current (ID) of 3.4A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 14 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SI2316DS-T1-E3 Features
a continuous drain current (ID) of 3.4A
the turn-off delay time is 14 ns
SI2316DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2316DS-T1-E3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
SI2316DS-T1-E3 More Descriptions
Single N-Channel 30 V 0.05 Ohms Surface Mount Power Mosfet - TO-236
30V 2.9A 50m´Î@10V3.4A 700mW 800mV@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; On Resistance Rds(On):0.05Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:800Mv Rohs Compliant: No
30V 2.9A 50m´Î@10V3.4A 700mW 800mV@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.4A; On Resistance Rds(On):0.05Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:800Mv Rohs Compliant: No
The three parts on the right have similar specifications to SI2316DS-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Threshold VoltageDrain to Source Breakdown VoltageMax Junction Temperature (Tj)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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SI2316DS-T1-E314 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3yesActive1 (Unlimited)3EAR9950mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING2603031130V700mW TaSingle2AENHANCEMENT MODE700mW9 nsN-ChannelSWITCHING50m Ω @ 3.4A, 10V800mV @ 250μA (Min)215pF @ 15V2.9A Ta7nC @ 10V9ns4.5V 10V±20V9 ns14 ns3.4A20V800 mV1.02mm3.04mm1.4mmUnknownNoROHS3 CompliantLead Free-----------
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14 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)3EAR99-Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING26030311-860mW Ta 1.6W TcSingle-ENHANCEMENT MODE860mW11 nsP-ChannelSWITCHING112m Ω @ 2.8A, 4.5V1V @ 250μA405pF @ 10V3.1A Tc10nC @ 4.5V35ns2.5V 4.5V±8V35 ns30 ns-2.3A8V-1.12mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free20V-1V-20V150°C------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803g--55°C~150°C TJTape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-----11-710mW TaSingle--710mW18 nsP-Channel-45mOhm @ 3.5A, 4.5V800mV @ 250μA970pF @ 4V3A Ta12nC @ 4.5V45ns1.8V 4.5V±8V45 ns40 ns-3A8V-1.02mm3.04mm1.4mm--ROHS3 Compliant-8V---SOT-23-3150°C-55°C970pF45mOhm45 mΩ
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803g--55°C~150°C TJTape & Reel (TR)TrenchFET®2012--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)------1-710mW TaSingle---18 nsP-Channel-45mOhm @ 3.5A, 4.5V800mV @ 250μA970pF @ 4V3A Ta12nC @ 4.5V45ns1.8V 4.5V±8V45 ns40 ns-3A8V-1.02mm3.04mm1.4mm--ROHS3 Compliant-8V--8V-SOT-23-3150°C-55°C970pF45mOhm45 mΩ
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