Vishay Siliconix SI2309DS-T1-E3

SI2309DS-T1-E3 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -1.25A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15.5 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 340mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI2309DS-T1-E3 Features
a continuous drain current (ID) of -1.25A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 15.5 ns
single MOSFETs transistor is 340mOhm
a 60V drain to source voltage (Vdss)


SI2309DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2309DS-T1-E3 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification