Vishay Siliconix SI2308BDS-T1-E3

SI2308BDS-T1-E3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 190pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 1.9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1V, which means that it will not activate any of its functions when its threshold voltage reaches 1V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SI2308BDS-T1-E3 Features
a continuous drain current (ID) of 1.9A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
a threshold voltage of 1V


SI2308BDS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2308BDS-T1-E3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies