Vishay Siliconix SI2307BDS-T1-E3

Name: SI2307BDS-T1-E3
Brand: Vishay Siliconix
SKU: 2848417-SI2307BDS-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2307BDS-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2848417-SI2307BDS-T1-E3

Description:: MOSFET P-CH 30V 2.5A SOT23-3

ECAD Model:

Datasheet:: SI2307BDS-T1-E3

Specifications

Vishay Siliconix SI2307BDS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2307BDS-T1-E3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
78mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
750mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
750mW
Turn On Delay Time
9 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
78m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 15V
Current - Continuous Drain (Id) @ 25°C
2.5A Ta
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Rise Time
12ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
-2.5A
Threshold Voltage
-3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-30V
Nominal Vgs
-3 V
Height
1.02mm
Length
3.04mm
Width
1.4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI2307BDS-T1-E3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 380pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -2.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -3V threshold voltage. Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

SI2307BDS-T1-E3 Features
a continuous drain current (ID) of -2.5A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 25 ns
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)

SI2307BDS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2307BDS-T1-E3 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

SI2307BDS-T1-E3 More Descriptions

Single P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23
30V 2.5A 750mW 78m´Î@10V3.2A 3V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET, Power, P-Ch, VDSS -30V, RDS(ON) 0.063Ohm, ID -2.5A, TO-236 (SOT-23),PD 0.75W | Siliconix / Vishay SI2307BDS-T1-E3
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
P Channel Mosfet, -30V, 2.5A To-236, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3Vrohs Compliant: No |Vishay SI2307BDS-T1-E3.
MOSFET, P-CH, -30V, -2.5A, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.063ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 750mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015); Operating Temperature Min: -55°C

Product Comparison

The three parts on the right have similar specifications to SI2307BDS-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Transistor Application

Drain Current-Max (Abs) (ID)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
SI2307BDS-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

78mOhm

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

750mW Ta

Single

ENHANCEMENT MODE

750mW

9 ns

P-Channel

78m Ω @ 3.2A, 10V

3V @ 250μA

380pF @ 15V

2.5A Ta

15nC @ 10V

12ns

30V

4.5V 10V

±20V

12 ns

25 ns

-2.5A

-3V

20V

-30V

-3 V

1.02mm

3.04mm

1.4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
SI2305ADS-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

SILICON

-50°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2015

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

40mOhm

MATTE TIN

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

-

960mW Ta 1.7W Tc

Single

ENHANCEMENT MODE

-

-

P-Channel

40m Ω @ 4.1A, 4.5V

800mV @ 250μA

740pF @ 4V

5.4A Tc

15nC @ 4.5V

11ns

-

1.8V 4.5V

±8V

11 ns

22 ns

4.1A

-

8V

-8V

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

SWITCHING

5.4A

-

-

-

-

-

-

SI2307BDS-T1-E3 vs SI2305ADS-T1-E3
SI2311DS-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

710mW Ta

Single

-

-

18 ns

P-Channel

45mOhm @ 3.5A, 4.5V

800mV @ 250μA

970pF @ 4V

3A Ta

12nC @ 4.5V

45ns

8V

1.8V 4.5V

±8V

45 ns

40 ns

-3A

-

8V

-8V

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

-

-

SOT-23-3

150°C

-55°C

970pF

45mOhm

45 mΩ

SI2307BDS-T1-E3 vs SI2311DS-T1-GE3
SI2305ADS-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

SILICON

-50°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2014

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

40MOhm

MATTE TIN

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

-

960mW Ta 1.7W Tc

Single

ENHANCEMENT MODE

960mW

-

P-Channel

40m Ω @ 4.1A, 4.5V

800mV @ 250μA

740pF @ 4V

5.4A Tc

15nC @ 4.5V

11ns

-

1.8V 4.5V

±8V

11 ns

22 ns

-4.1A

-800mV

8V

8V

-800 mV

-

-

-

Unknown

No

ROHS3 Compliant

Lead Free

SWITCHING

5.4A

-

-

-

-

-

-

SI2307BDS-T1-E3 vs SI2305ADS-T1-GE3

Certification

Related parts for SI2307BDS-T1-E3

SI2303CDS-T1-GE3

Vishay Siliconix

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SI2305ADS-T1-E3

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MOSFET N-CH 20V 2.1A SOT23-3
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Vishay Siliconix

MOSFET P-CH 8V 3A SOT23
SI2311DS-T1-GE3

Vishay Siliconix

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SI2307BDS-T1-E3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R RoHS: Compliant	2185	1 $0.486 10 $0.4276 25 $0.4258 100 $0.3425 250 $0.3416 500 $0.2668 1000 $0.2152
SI2307BDS-T1-E3 DISTI #	Vishay Siliconix	MOSFET P-CH 30V 2.5A SOT23-3 RoHS: Compliant	24407	1 $0.59 10 $0.499 100 $0.3739 500 $0.27418 1000 $0.21187
SI2307BDS-T1-E3 DISTI #	Vishay Siliconix	MOSFET P-CH 30V 2.5A SOT23-3 RoHS: Compliant	24407	1 $0.59 10 $0.499 100 $0.3739 500 $0.27418 1000 $0.21187
SI2307BDS-T1-E3 DISTI #	Vishay Siliconix	MOSFET P-CH 30V 2.5A SOT23-3 RoHS: Compliant	24000	3000 $0.18755
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R RoHS: Compliant	2185	28 $0.4258 100 $0.3425 250 $0.3416 500 $0.2668 1000 $0.2152
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape RoHS: Not Compliant	0	3000 $0.1949 6000 $0.1889 12000 $0.1809 18000 $0.1759 30000 $0.1719
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: RoHS: Compliant	0	3000 $0.3179 6000 $0.2169 12000 $0.1869 18000 $0.1719 30000 $0.1599
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: RoHS: Compliant	0
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape RoHS: Not Compliant	0	1 $0.32 6000 $0.308 12000 $0.298
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Prod RoHS: Not Compliant	0	1 $0.912 25 $0.728 50 $0.641 100 $0.552 250 $0.504 500 $0.456 1000 $0.365
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	P CHANNEL MOSFET, Transistor Polarity:P Channel,	3436	1 $0.912 25 $0.728 50 $0.641 100 $0.552 250 $0.504 500 $0.456 1000 $0.365
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	P CHANNEL MOSFET, -30V, 2.5A TO-236, FULL REEL, T	6000	1 $0.331 3000 $0.32 6000 $0.308 12000 $0.298
SI2307BDS-T1-E3. DISTI #	Vishay Intertechnologies	FOR NEW DESIGNS USE SI2307CDS-T1-GE3 , ROHS COMPLI	0	1 $0.338 3000 $0.32 6000 $0.308 12000 $0.298
SI2307BDS-T1-E3 DISTI #	Vishay Siliconix	MOSFET, Power, P-Ch, VDSS -30V, RDS(ON) 0.063O RoHS: Compliant	0	3000 $0.34 6000 $0.3 9000 $0.27
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET 30V 3.2A 1.25W RoHS: Compliant	16579	1 $0.76 10 $0.607 100 $0.46 500 $0.38 1000 $0.304 3000 $0.276 6000 $0.257 9000 $0.248
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	Single P-Channel 30 V 0.078 Ohms Surface Mount Pow RoHS: Compliant	21000	3000 $0.27
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	Single P-Channel 30 V 0.078 Ohms Surface Mount Pow RoHS: Compliant	2945	1 $0.375 250 $0.32 500 $0.315 750 $0.31 1500 $0.3
SI2307BDS-T1-E3 DISTI #	Vishay BLH		2730	12 $0.45 46 $0.2925 172 $0.1688 594 $0.144 1286 $0.126
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies		1625
SI2307BDS-T1-E3 DISTI #	Vishay Siliconix		165	12 $0.45 46 $0.2925
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	2184	1 $0.6 201 $0.18 1112 $0.156
SI2307BDS-T1-E3 DISTI #	Vishay Semiconductors	2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	132	1 $0.6 9 $0.48 43 $0.3
SI2307BDS-T1-E3 DISTI #	Vishay Siliconix	RoHS: Compliant	40343	3000 $0.75 40343 $0.6818
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	P CHANNEL MOSFET, -30V, 2.5A TO-236, FUL RoHS: Compliant	6000	3000 $1.05
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, P-CH, -30V, -2.5A, SOT-23-3 RoHS: Compliant	3781	1 $0.935 10 $0.79 100 $0.592 500 $0.434 1000 $0.403
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2185	10 $0.4258 25 $0.424 100 $0.3416 250 $0.3407
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, P-CH, -30V, -2.5A, SOT-23-3 RoHS: Compliant	3714	5 $0.456 25 $0.424 100 $0.303 250 $0.263 500 $0.222
SI2307BDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET 30V 3.2A 1.25W RoHS: Compliant	0

SI2307B~~(4)~~
SI2307~~(15)~~
SI230~~(155)~~
SI23~~(173)~~
SI2~~(196)~~

Vishay Siliconix SI2307BDS-T1-E3

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