Vishay Siliconix SI2304DDS-T1-GE3

Name: SI2304DDS-T1-GE3
Brand: Vishay Siliconix
SKU: 2484707-SI2304DDS-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2304DDS-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2484707-SI2304DDS-T1-GE3

Description:: MOSFET N-CH 30V 3.3A SOT23

ECAD Model:

Datasheet:: SI2304DDS-T1-GE3

Specifications

Vishay Siliconix SI2304DDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2304DDS-T1-GE3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
60mOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.1W Ta 1.7W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.1W
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
235pF @ 15V
Current - Continuous Drain (Id) @ 25°C
3.3A Ta 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs
6.7nC @ 10V
Rise Time
50ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
12 ns
Continuous Drain Current (ID)
3.6A
Threshold Voltage
2.2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Nominal Vgs
2.2 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI2304DDS-T1-GE3 Overview
A device's maximal input capacitance is 235pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 12 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2.2V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

SI2304DDS-T1-GE3 Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
a threshold voltage of 2.2V

SI2304DDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2304DDS-T1-GE3 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

SI2304DDS-T1-GE3 More Descriptions

Single N-Channel 30 V 0.06 Ohm Surface Mount Power MosFet - SOT-23-3
Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET,N CH,30V,3.6A,DIODE,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.3A; Power Dissipation Pd:1.1W; Voltage Vgs Max:20V
N Channel Mosfet, 30V, 3.6A, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V Rohs Compliant: No |Vishay SI2304DDS-T1-GE3.

Product Comparison

The three parts on the right have similar specifications to SI2304DDS-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

Forward Voltage

View Compare
SI2304DDS-T1-GE3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Active

1 (Unlimited)

3

EAR99

60mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

1.1W Ta 1.7W Tc

Single

ENHANCEMENT MODE

1.1W

12 ns

N-Channel

SWITCHING

60m Ω @ 3.2A, 10V

2.2V @ 250μA

235pF @ 15V

3.3A Ta 3.6A Tc

6.7nC @ 10V

50ns

4.5V 10V

±20V

22 ns

12 ns

3.6A

2.2V

20V

30V

2.2 V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
SI2323DS-T1

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

750mW Ta

Single

-

1.25W

25 ns

P-Channel

-

39mOhm @ 4.7A, 4.5V

1V @ 250μA

1020pF @ 10V

3.7A Ta

19nC @ 4.5V

43ns

1.8V 4.5V

±8V

43 ns

71 ns

3.7A

-

8V

-20V

-

-

-

ROHS3 Compliant

-

SOT-23-3 (TO-236)

150°C

-55°C

20V

1.02nF

39mOhm

39 mΩ

1.02mm

3.04mm

1.4mm

-

SI2304DDS-T1-GE3 vs SI2323DS-T1
SI2302ADS-T1

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

700mW Ta

Single

-

900mW

7 ns

N-Channel

-

60mOhm @ 3.6A, 4.5V

1.2V @ 50μA

300pF @ 10V

2.1A Ta

10nC @ 4.5V

55ns

2.5V 4.5V

±8V

55 ns

16 ns

2.1A

-

8V

20V

-

-

-

ROHS3 Compliant

-

SOT-23-3 (TO-236)

150°C

-55°C

20V

300pF

60mOhm

60 mΩ

1.02mm

3.04mm

1.4mm

760mV

SI2304DDS-T1-GE3 vs SI2302ADS-T1
SI2311DS-T1-E3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

1

710mW Ta

Single

-

710mW

18 ns

P-Channel

-

45mOhm @ 3.5A, 4.5V

800mV @ 250μA

970pF @ 4V

3A Ta

12nC @ 4.5V

45ns

1.8V 4.5V

±8V

45 ns

40 ns

-3A

-

8V

-

-

-

-

ROHS3 Compliant

-

SOT-23-3

150°C

-55°C

8V

970pF

45mOhm

45 mΩ

1.02mm

3.04mm

1.4mm

-

SI2304DDS-T1-GE3 vs SI2311DS-T1-E3

Certification

Related parts for SI2304DDS-T1-GE3

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SI2304DDS-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2304DDS-T1-GE3 DISTI #V36:1790_07432783	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R RoHS: Compliant	24000	3000 $0.1093
SI2304DDS-T1-GE3 DISTI #V72:2272_07432783	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R RoHS: Compliant	5270	1 $0.4126 10 $0.3239 25 $0.2916 100 $0.1986 250 $0.1895 500 $0.154 1000 $0.1133 3000 $0.1047
SI2304DDS-T1-GE3 DISTI #SI2304DDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 3.3A SOT23 RoHS: Compliant	26271	1 $0.44 10 $0.356 100 $0.2423 500 $0.1817 1000 $0.13627
SI2304DDS-T1-GE3 DISTI #SI2304DDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 3.3A SOT23 RoHS: Compliant	26271	1 $0.44 10 $0.356 100 $0.2423 500 $0.1817 1000 $0.13627
SI2304DDS-T1-GE3 DISTI #SI2304DDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 3.3A SOT23 RoHS: Compliant	24000	3000 $0.12128 6000 $0.11393 15000 $0.10658 30000 $0.09776 75000 $0.09408
SI2304DDS-T1-GE3 DISTI #33368507	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R RoHS: Compliant	180000	3000 $0.0845
SI2304DDS-T1-GE3 DISTI #31040547	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R RoHS: Compliant	24000	3000 $0.1093
SI2304DDS-T1-GE3 DISTI #26717962	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R RoHS: Compliant	5270	89 $0.4126
SI2304DDS-T1-GE3 DISTI #30607115	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R RoHS: Compliant	3349	69 $0.3637
SI2304DDS-T1-GE3 DISTI #SI2304DDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R (Alt: RoHS: Compliant	12000	3000 $0.1709 6000 $0.1169 12000 $0.0999 18000 $0.0929 30000 $0.0859
SI2304DDS-T1-GE3 DISTI #SI2304DDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R (Alt: RoHS: Compliant	9000	3000 $0.1982 6000 $0.16179 9000 $0.13437 15000 $0.11659 30000 $0.1086 75000 $0.10571 150000 $0.10296
SI2304DDS-T1-GE3 DISTI #SI2304DDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R - Tape RoHS: Not Compliant	9000	3000 $0.07278 6000 $0.07062 12000 $0.06775 18000 $0.06588 30000 $0.0641
SI2304DDS-T1-GE3 DISTI #35R6205	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R - Prod RoHS: Not Compliant	0	1 $0.575 25 $0.389 50 $0.326 100 $0.263 250 $0.236 500 $0.21 1000 $0.158
SI2304DDS-T1-GE3 DISTI #35R6205	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 3.6A, Transistor Polarity:	1074	1 $0.581 25 $0.393 50 $0.329 100 $0.265 250 $0.239 500 $0.213 1000 $0.159
SI2304DDS-T1-GE3 DISTI #23T8495	Vishay Intertechnologies	MOSFET Transistor, N Channel, 3.6 A, 30 V, 0.049 o	314	1 $0.581 25 $0.393 50 $0.329 100 $0.265 250 $0.239 500 $0.213 1000 $0.159
SI2304DDS-T1-GE3 DISTI #35R0030	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 3.6A, FULL REEL, Transisto	0	1 $0.147 5000 $0.139 10000 $0.122 20000 $0.108 30000 $0.1 50000 $0.091
SI2304DDS-T1-GE3. DISTI #26AC3313	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: NO	12000	1 $0.147 5000 $0.139 10000 $0.122 20000 $0.108 30000 $0.1 50000 $0.091
SI2304DDS-T1-GE3 DISTI #70459666	Vishay Siliconix	SI2304DDS-T1-GE3 N-channel MOSFET Transistor, 3.6 RoHS: Compliant	2500	25 $0.197 250 $0.188 500 $0.179 750 $0.17 1000 $0.143
SI2304DDS-T1-GE3 DISTI #781-SI2304DDS-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SOT-23 RoHS: Compliant	56220	1 $0.45 10 $0.31 100 $0.209 500 $0.167 1000 $0.125 3000 $0.115 6000 $0.108 9000 $0.101 24000 $0.093
SI2304DDS-T1-GE3 DISTI #	Vishay Intertechnologies	Single N-Channel 30 V 0.06 Ohm Surface Mount Power RoHS: Compliant	3000	3000 $0.0678 6000 $0.0644
SI2304DDS-T1-GE3 DISTI #8123117	Vishay Intertechnologies	TRANS MOSFET N-CH 30V 3.3A 3-PIN, PK	700	50 $0.242 500 $0.151 1000 $0.139
SI2304DDS-T1-GE3 DISTI #8123117P	Vishay Intertechnologies	TRANS MOSFET N-CH 30V 3.3A 3-PIN, RL	8700	500 $0.151 1000 $0.139
SI2304DDS-T1-GE3 DISTI #	Vishay Intertechnologies		2074
SI2304DDS-T1-GE3 DISTI #	Vishay Siliconix	3300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	13	1 $0.48 11 $0.36
SI2304DDS-T1-GE3 DISTI #1858939RL	Vishay Intertechnologies	MOSFET,N CH,30V,3.6A,DIODE,SOT23 RoHS: Compliant	0	1 $0.66 10 $0.536 100 $0.366 500 $0.274 1000 $0.206
SI2304DDS-T1-GE3 DISTI #1858939	Vishay Intertechnologies	MOSFET,N CH,30V,3.6A,DIODE,SOT23 RoHS: Compliant	3134	1 $0.66 10 $0.536 100 $0.366 500 $0.274 1000 $0.206
SI2304DDS-T1-GE3 DISTI #1858939	Vishay Intertechnologies	MOSFET,N CH,30V,3.6A,DIODE,SOT23	8564	5 $0.276 25 $0.265 100 $0.163 250 $0.147 500 $0.131
SI2304DDS-T1-GE3 DISTI #C1S803600844034	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3349	25 $0.291 50 $0.218 100 $0.186 200 $0.17 500 $0.153 1000 $0.113 2000 $0.112 3000 $0.0894
SI2304DDS-T1-GE3 DISTI #XSKDRABV0026465	Vishay Intertechnologies	Zener Diode, 36V V(Z), 5%, 1W,Silicon,Unidirection RoHS: Compliant	9000	6000 $0.1271 9000 $0.1187
SI2304DDS-T1-GE3 DISTI #TMOSS6568	Vishay Intertechnologies	N-CH 30V 3,6A 60mOhm SOT23 RoHS: Compliant	0	3000 $0.1301 6000 $0.1226 9000 $0.1152 12000 $0.1041 15000 $0.1003
SI2304DDS-T1-GE3 DISTI #	Vishay Intertechnologies	30V,3.6A,0.06,N-Channel Power MOSFET	20000	1 $0.31 100 $0.13 500 $0.12 1000 $0.12
SI2304DDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SOT-23 RoHS: Compliant	303000	3000 $0.086 6000 $0.082 12000 $0.079 18000 $0.077
SI2304DDS-T1-GE3. DISTI #	Vishay Intertechnologies	MOSFET 30V 3.6A 1.7W 60mohm @ 10V RoHS: Compliant	2000	25 $0.2791 100 $0.1881 250 $0.1692 500 $0.1503 1000 $0.1226

SI2304D~~(11)~~
SI2304~~(17)~~
SI230~~(155)~~
SI23~~(173)~~
SI2~~(196)~~

Vishay Siliconix SI2304DDS-T1-GE3

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