Vishay Siliconix SI2304BDS-T1-GE3

SI2304BDS-T1-GE3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 225pF @ 15V.This device conducts a continuous drain current (ID) of 3.2A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 2.6A.When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.25V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SI2304BDS-T1-GE3 Features
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
a threshold voltage of 2.25V


SI2304BDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2304BDS-T1-GE3 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching