Vishay Siliconix SI2303CDS-T1-E3

Name: SI2303CDS-T1-E3
Brand: Vishay Siliconix
SKU: 2480228-SI2303CDS-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2303CDS-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2480228-SI2303CDS-T1-E3

Description:: MOSFET P-CH 30V 2.7A SOT23-3

ECAD Model:

Datasheet:: SI2303CDS-T1-E3

Specifications

Vishay Siliconix SI2303CDS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2303CDS-T1-E3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
190MOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.3W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.3W
Turn On Delay Time
36 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
190m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
155pF @ 15V
Current - Continuous Drain (Id) @ 25°C
2.7A Tc
Gate Charge (Qg) (Max) @ Vgs
8nC @ 10V
Rise Time
37ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
37 ns
Turn-Off Delay Time
12 ns
Continuous Drain Current (ID)
1.9A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
2.7A
Drain to Source Breakdown Voltage
-30V
Height
1.02mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI2303CDS-T1-E3 Overview
A device's maximal input capacitance is 155pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1.9A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 2.7A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 12 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 36 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

SI2303CDS-T1-E3 Features
a continuous drain current (ID) of 1.9A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 12 ns
a 30V drain to source voltage (Vdss)

SI2303CDS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2303CDS-T1-E3 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

SI2303CDS-T1-E3 More Descriptions

Single P-Channel 30 V 190 mOhms Surface Mount Power Mosfet - SOT-23-3
N-CH MOSFET SO-8 BWL 12V 5.5MOHM @ 4.5V PMW OPT | Siliconix / Vishay SI2303CDS-T1-E3
Trans MOSFET P-CH 30V 1.9A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2.3W; No. of Pins:3Pins RoHS Compliant: No

Product Comparison

The three parts on the right have similar specifications to SI2303CDS-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

Threshold Voltage

Max Junction Temperature (Tj)

REACH SVHC

Nominal Vgs

View Compare
SI2303CDS-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

yes

Active

1 (Unlimited)

3

EAR99

190MOhm

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

2.3W Tc

Single

ENHANCEMENT MODE

2.3W

36 ns

P-Channel

SWITCHING

190m Ω @ 1.9A, 10V

3V @ 250μA

155pF @ 15V

2.7A Tc

8nC @ 10V

37ns

30V

4.5V 10V

±20V

37 ns

12 ns

1.9A

20V

2.7A

-30V

1.02mm

3.04mm

1.4mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
SI2331DS-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

-

710mW Ta

Single

-

710mW

-

P-Channel

-

48mOhm @ 3.6A, 4.5V

900mV @ 250μA

780pF @ 6V

3.2A Ta

14nC @ 4.5V

35ns

12V

1.8V 4.5V

±8V

35 ns

65 ns

3.2A

8V

-

20V

-

-

-

-

ROHS3 Compliant

-

SOT-23-3 (TO-236)

150°C

-55°C

780pF

48mOhm

48 mΩ

-

-

-

-

SI2303CDS-T1-E3 vs SI2331DS-T1-E3
SI2301CDS-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

860mW Ta 1.6W Tc

Single

ENHANCEMENT MODE

860mW

11 ns

P-Channel

SWITCHING

112m Ω @ 2.8A, 4.5V

1V @ 250μA

405pF @ 10V

3.1A Tc

10nC @ 4.5V

35ns

20V

2.5V 4.5V

±8V

35 ns

30 ns

-2.3A

8V

-

-20V

1.12mm

3.04mm

1.4mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-1V

150°C

No SVHC

-

SI2303CDS-T1-E3 vs SI2301CDS-T1-E3
SI2305ADS-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

SILICON

-50°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2014

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

40MOhm

MATTE TIN

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

-

960mW Ta 1.7W Tc

Single

ENHANCEMENT MODE

960mW

-

P-Channel

SWITCHING

40m Ω @ 4.1A, 4.5V

800mV @ 250μA

740pF @ 4V

5.4A Tc

15nC @ 4.5V

11ns

-

1.8V 4.5V

±8V

11 ns

22 ns

-4.1A

8V

5.4A

8V

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-800mV

-

Unknown

-800 mV

SI2303CDS-T1-E3 vs SI2305ADS-T1-GE3

Certification

Related parts for SI2303CDS-T1-E3

SI2303CDS-T1-GE3

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SI2305ADS-T1-E3

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SI2303CDS-T1-E3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2303CDS-T1-E3 DISTI #V72:2272_09216785	Vishay Intertechnologies	Trans MOSFET P-CH 30V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant	2000	1 $0.6754 10 $0.5195 25 $0.425 100 $0.3515 250 $0.3377 500 $0.2759 1000 $0.2419
SI2303CDS-T1-E3 DISTI #V36:1790_09216785	Vishay Intertechnologies	Trans MOSFET P-CH 30V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000 $0.2148 30000 $0.2118 300000 $0.1926 1500000 $0.1802 3000000 $0.18
SI2303CDS-T1-E3 DISTI #SI2303CDS-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 2.7A SOT23-3 RoHS: Compliant	1440	1 $0.52 10 $0.446 100 $0.3331 500 $0.26172 1000 $0.20224
SI2303CDS-T1-E3 DISTI #SI2303CDS-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 2.7A SOT23-3 RoHS: Compliant	1440	1 $0.52 10 $0.446 100 $0.3331 500 $0.26172 1000 $0.20224
SI2303CDS-T1-E3 DISTI #SI2303CDS-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 2.7A SOT23-3 RoHS: Compliant	0	3000 $0.17903 6000 $0.16748 15000 $0.15593 30000 $0.14784
SI2303CDS-T1-E3 DISTI #32750796	Vishay Intertechnologies	Trans MOSFET P-CH 30V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant	2000	41 $0.6754
SI2303CDS-T1-E3 DISTI #SI2303CDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 1.9A 3-Pin SOT-23 T/R - Tape RoHS: Not Compliant	0	3000 $0.16012 6000 $0.15537 12000 $0.14905 18000 $0.14493 30000 $0.14103
SI2303CDS-T1-E3 DISTI #33P5166	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET	0	1 $0.172 5000 $0.168 10000 $0.155 20000 $0.145 30000 $0.135 50000 $0.129
SI2303CDS-T1-E3. DISTI #23AC9591	Vishay Intertechnologies	Transistor Polarity:P Channel, Continuous Drain C	0	1 $0.172 5000 $0.168 10000 $0.155 20000 $0.145 30000 $0.135 50000 $0.129
SI2303CDS-T1-E3 DISTI #70026193	Vishay Siliconix	N-CH MOSFET SO-8 BWL 12V 5.5MOHM @ 4.5VPMW OPT RoHS: Compliant	0	3000 $0.168
SI2303CDS-T1-E3 DISTI #781-SI2303CDS-E3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SOT-23 RoHS: Compliant	18236	1 $0.52 10 $0.397 100 $0.294 500 $0.242 1000 $0.187 3000 $0.17 6000 $0.159 9000 $0.148
SI2303CDS-T1-E3 DISTI #	Vishay Siliconix	1900 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	2465	1 $0.6 201 $0.21 953 $0.1875
SI2303CDS-T1-E3 DISTI #	Vishay Siliconix	1900 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	2072	1 $1.2 334 $0.48 1668 $0.42

SI2303C~~(4)~~
SI2303~~(19)~~
SI230~~(155)~~
SI23~~(173)~~
SI2~~(196)~~

Vishay Siliconix SI2303CDS-T1-E3

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