Vishay Siliconix SI2303BDS-T1-GE3
- Part Number:
- SI2303BDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2490818-SI2303BDS-T1-GE3
- Description:
- MOSFET P-CH 30V 1.49A SOT23-3
- ECAD Model:
-
- Datasheet:
- SI2303BDS-T1-GE3
Vishay Siliconix SI2303BDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2303BDS-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Number of Elements1
- Power Dissipation-Max700mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation700mW
- Turn On Delay Time55 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs200m Ω @ 1.7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds180pF @ 15V
- Current - Continuous Drain (Id) @ 25°C1.49A Ta
- Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
- Rise Time40ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time10 ns
- Continuous Drain Current (ID)-1.49A
- Threshold Voltage-3V
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.2Ohm
- Drain to Source Breakdown Voltage30V
- Nominal Vgs-3 V
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI2303BDS-T1-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 180pF @ 15V.This device has a continuous drain current (ID) of [-1.49A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 10 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 55 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -3V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI2303BDS-T1-GE3 Features
a continuous drain current (ID) of -1.49A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 10 ns
a threshold voltage of -3V
SI2303BDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2303BDS-T1-GE3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 180pF @ 15V.This device has a continuous drain current (ID) of [-1.49A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 10 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 55 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -3V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI2303BDS-T1-GE3 Features
a continuous drain current (ID) of -1.49A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 10 ns
a threshold voltage of -3V
SI2303BDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2303BDS-T1-GE3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI2303BDS-T1-GE3 More Descriptions
Trans MOSFET P-CH 30V 1.3A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 1.49A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
P CH MOSFET, -30, -1.49A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.49A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V ;RoHS Compliant: Yes
Small Signal Field-Effect Transistor, 1.49A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
P CH MOSFET, -30, -1.49A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.49A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI2303BDS-T1-GE3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageNominal VgsREACH SVHCRadiation HardeningRoHS StatusSeriesReach Compliance CodeQualification StatusFactory Lead TimeWeightNumber of ChannelsTransistor ApplicationDrain to Source Voltage (Vdss)Max Junction Temperature (Tj)HeightLengthWidthLead FreeResistanceDrain Current-Max (Abs) (ID)View Compare
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SI2303BDS-T1-GE3Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2013e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2603031700mW TaSingleENHANCEMENT MODE700mW55 nsP-Channel200m Ω @ 1.7A, 10V3V @ 250μA180pF @ 15V1.49A Ta10nC @ 10V40ns4.5V 10V±20V40 ns10 ns-1.49A-3V20V0.2Ohm30V-3 VUnknownNoROHS3 Compliant---------------- -
Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2016e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2603031750mW TaSingleENHANCEMENT MODE750mW13 nsP-Channel51m Ω @ 4A, 4.5V450mV @ 250μA (Min)1225pF @ 6V3.2A Ta15nC @ 4.5V-1.8V 4.5V±8V-50 ns3.2A-8V0.051Ohm12V---ROHS3 CompliantTrenchFET®unknownNot Qualified------------
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2016e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2603031860mW Ta 1.6W TcSingleENHANCEMENT MODE860mW11 nsP-Channel112m Ω @ 2.8A, 4.5V1V @ 250μA405pF @ 10V3.1A Tc10nC @ 4.5V35ns2.5V 4.5V±8V35 ns30 ns-2.3A-1V8V--20V-No SVHCNoROHS3 CompliantTrenchFET®--14 Weeks1.437803g1SWITCHING20V150°C1.12mm3.04mm1.4mmLead Free--
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-50°C~150°C TJTape & Reel (TR)2014e3yesObsolete1 (Unlimited)3EAR99MATTE TINOther TransistorsMOSFET (Metal Oxide)DUALGULL WING2603031960mW Ta 1.7W TcSingleENHANCEMENT MODE960mW-P-Channel40m Ω @ 4.1A, 4.5V800mV @ 250μA740pF @ 4V5.4A Tc15nC @ 4.5V11ns1.8V 4.5V±8V11 ns22 ns-4.1A-800mV8V-8V-800 mVUnknownNoROHS3 CompliantTrenchFET®-----SWITCHING-----Lead Free40MOhm5.4A
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