Vishay Siliconix SI2302CDS-T1-E3

Name: SI2302CDS-T1-E3
Brand: Vishay Siliconix
SKU: 2477964-SI2302CDS-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2302CDS-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2477964-SI2302CDS-T1-E3

Description:: MOSFET N-CH 20V 2.6A SOT-23

ECAD Model:

Datasheet:: SI2302CDS-T1-E3

Specifications

Vishay Siliconix SI2302CDS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2302CDS-T1-E3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
57mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
710mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
710mW
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
57m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C
2.6A Ta
Gate Charge (Qg) (Max) @ Vgs
5.5nC @ 4.5V
Rise Time
7ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
2.6A
Threshold Voltage
400mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
20V
Input Capacitance
112pF
Max Junction Temperature (Tj)
150°C
Height
1.12mm
Length
3.04mm
Width
1.4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI2302CDS-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and this device has 2.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.In this case, the threshold voltage of the transistor is 400mV, which means that it will not activate any of its functions when its threshold voltage reaches 400mV.Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.

SI2302CDS-T1-E3 Features
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 30 ns
a threshold voltage of 400mV

SI2302CDS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2302CDS-T1-E3 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

SI2302CDS-T1-E3 More Descriptions

MOSFET, N CH, 20V, 2.6A, SOT-23-3; Transistor Polarity:N Channel; Continuous Dra
Single N-Channel 20 V 0.057 Ohm 0.71 W Surface Mount Power Mosfet - SOT-23-3
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N CH, 20V, 2.6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:710mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-

Product Comparison

The three parts on the right have similar specifications to SI2302CDS-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Input Capacitance (Ciss) (Max) @ Vds

Drain to Source Voltage (Vdss)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Resistance

Rds On Max

View Compare
SI2302CDS-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

e3

yes

Active

1 (Unlimited)

3

EAR99

57mOhm

Matte Tin (Sn)

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

710mW Ta

Single

ENHANCEMENT MODE

710mW

8 ns

N-Channel

SWITCHING

57m Ω @ 3.6A, 4.5V

850mV @ 250μA

2.6A Ta

5.5nC @ 4.5V

7ns

2.5V 4.5V

±8V

7 ns

30 ns

2.6A

400mV

8V

20V

112pF

150°C

1.12mm

3.04mm

1.4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
SI2301CDS-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

860mW Ta 1.6W Tc

Single

ENHANCEMENT MODE

860mW

11 ns

P-Channel

SWITCHING

112m Ω @ 2.8A, 4.5V

1V @ 250μA

3.1A Tc

10nC @ 4.5V

35ns

2.5V 4.5V

±8V

35 ns

30 ns

-2.3A

-1V

8V

-20V

-

150°C

1.12mm

3.04mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

405pF @ 10V

20V

-

-

-

-

-

SI2302CDS-T1-E3 vs SI2301CDS-T1-E3
SI2323DS-T1

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

750mW Ta

Single

-

1.25W

25 ns

P-Channel

-

39mOhm @ 4.7A, 4.5V

1V @ 250μA

3.7A Ta

19nC @ 4.5V

43ns

1.8V 4.5V

±8V

43 ns

71 ns

3.7A

-

8V

-20V

1.02nF

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

1020pF @ 10V

20V

SOT-23-3 (TO-236)

150°C

-55°C

39mOhm

39 mΩ

SI2302CDS-T1-E3 vs SI2323DS-T1
SI2311DS-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

710mW Ta

Single

-

-

18 ns

P-Channel

-

45mOhm @ 3.5A, 4.5V

800mV @ 250μA

3A Ta

12nC @ 4.5V

45ns

1.8V 4.5V

±8V

45 ns

40 ns

-3A

-

8V

-8V

970pF

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

970pF @ 4V

8V

SOT-23-3

150°C

-55°C

45mOhm

45 mΩ

SI2302CDS-T1-E3 vs SI2311DS-T1-GE3

Certification

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SI2302CDS-T1-E3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	2102	1 $0.3628 10 $0.2775 25 $0.2762 100 $0.2057 250 $0.2052 500 $0.1549 1000 $0.1283
SI2302CDS-T1-E3 DISTI #	Vishay Siliconix	MOSFET N-CH 20V 2.6A SOT-23 RoHS: Compliant	202387	1 $0.57 10 $0.405 100 $0.2657 500 $0.15702 1000 $0.12078
SI2302CDS-T1-E3 DISTI #	Vishay Siliconix	MOSFET N-CH 20V 2.6A SOT-23 RoHS: Compliant	202387	1 $0.57 10 $0.405 100 $0.2657 500 $0.15702 1000 $0.12078
SI2302CDS-T1-E3 DISTI #	Vishay Siliconix	MOSFET N-CH 20V 2.6A SOT-23 RoHS: Compliant	198000	3000 $0.10553
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	2102	41 $0.2762 100 $0.2057 250 $0.2052 500 $0.1549
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	26	13 $0.4029
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R - Tape RoHS: Not Compliant	0	3000 $0.1599 6000 $0.1549 12000 $0.1489 18000 $0.1439 30000 $0.1409
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R - Prod RoHS: Not Compliant	0	1 $0.612 25 $0.414 50 $0.347 100 $0.28 250 $0.252 500 $0.224 1000 $0.169
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 2.6A, SOT-23-3, FULL REEL,	0	1 $0.148 3000 $0.147 6000 $0.14 12000 $0.124
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 2.6A, SOT-23-3, Transisto	4974	1 $0.612 25 $0.414 50 $0.347 100 $0.28 250 $0.252 500 $0.224 1000 $0.169
SI2302CDS-T1-E3 DISTI #	Vishay Siliconix	20V 2.9A 0.86W 57mohm @ 4.5V RoHS: Compliant	0	3000 $0.236 6000 $0.228 12000 $0.211
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SOT-23 RoHS: Compliant	79161	1 $0.51 10 $0.345 100 $0.233 500 $0.187 1000 $0.141 3000 $0.129 6000 $0.121 9000 $0.113 24000 $0.104
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies		42
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	N-CHANNEL MOSFET 20V 2.6A 75MOHM SOT-23, RL	1275	3000 $0.149
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	N-CHANNEL MOSFET 20V 2.6A 75MOHM SOT-23, PK	475	25 $0.246
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	INSTOCK	295
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFETs	2153	10 $0.2775 25 $0.2762 100 $0.2057 250 $0.2052
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFETs RoHS: Compliant	26	1 $1.58 10 $0.316
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 2.6A, SOT-23-3 RoHS: Compliant	4974	1 $0.808 10 $0.546 100 $0.369 500 $0.297 1000 $0.223 3000 $0.204 6000 $0.192 9000 $0.185
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N CH, 20V, 2.6A, SOT-23 RoHS: Compliant	28816	1 $0.808 10 $0.546 100 $0.369 500 $0.297 1000 $0.25
SI2302CDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N CH, 20V, 2.6A, SOT-23 RoHS: Compliant	29581	5 $0.306 25 $0.253 100 $0.181 250 $0.169 500 $0.158

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Vishay Siliconix SI2302CDS-T1-E3

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