Vishay Siliconix SI2301BDS-T1-E3

SI2301BDS-T1-E3 Overview
The maximum input capacitance of this device is 375pF @ 6V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -2.2A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -950mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.

SI2301BDS-T1-E3 Features
a continuous drain current (ID) of -2.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 30 ns
a threshold voltage of -950mV
a 20V drain to source voltage (Vdss)


SI2301BDS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2301BDS-T1-E3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,