PBLS4003V,115

NXP USA Inc. PBLS4003V,115

Part Number:
PBLS4003V,115
Manufacturer:
NXP USA Inc.
Ventron No:
2844685-PBLS4003V,115
Description:
TRANS NPN PREBIAS/PNP SOT666
ECAD Model:
Datasheet:
PBLS4003V,115

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Specifications
NXP USA Inc. PBLS4003V,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PBLS4003V,115.
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO IS 1
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    PBLS4003
  • Pin Count
    6
  • JESD-30 Code
    R-PDSO-F6
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    150°C
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Power - Max
    300mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN AND PNP
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA 5V / 150 @ 100mA. 2V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V 40V
  • Current - Collector (Ic) (Max)
    100mA 500mA
  • Transition Frequency
    300MHz
  • Frequency - Transition
    300MHz
  • Power Dissipation-Max (Abs)
    0.3W
  • Resistor - Base (R1)
    10k Ω
  • Resistor - Emitter Base (R2)
    10k Ω
  • RoHS Status
    ROHS3 Compliant
Description
PBLS4003V,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PBLS4003V,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBLS4003V,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PBLS4003V,115 More Descriptions
Trans Digital BJT NPN/PNP 50V/40V 100mA/500mA 6-Pin SOT-666 T/R
PBLS4003Y; PBLS4003V - 40 V PNP BISS loadswitch
SMALL SIGNAL BIPOLAR TRANSISTOR,
STANDARD MARKING * REEL PACK, SMD, 7'
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1 ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PBLS4003V,115.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    Power Dissipation-Max (Abs)
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    RoHS Status
    Factory Lead Time
    Mount
    Number of Pins
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Polarity
    Number of Channels
    Element Configuration
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Continuous Collector Current
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    HTS Code
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    View Compare
  • PBLS4003V,115
    PBLS4003V,115
    Surface Mount
    SOT-563, SOT-666
    YES
    SILICON
    Tape & Reel (TR)
    2009
    e3
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    BUILT IN BIAS RESISTOR RATIO IS 1
    Other Transistors
    DUAL
    FLAT
    NOT SPECIFIED
    NOT SPECIFIED
    PBLS4003
    6
    R-PDSO-F6
    Not Qualified
    150°C
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    300mW
    SWITCHING
    NPN AND PNP
    1 NPN Pre-Biased, 1 PNP
    30 @ 5mA 5V / 150 @ 100mA. 2V
    1μA
    150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA
    50V 40V
    100mA 500mA
    300MHz
    300MHz
    0.3W
    10k Ω
    10k Ω
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PBLS1501V,115
    Surface Mount
    SOT-563, SOT-666
    -
    -
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    BUILT-IN BIAS RESISTOR RATIO IS 1
    -
    -
    FLAT
    260
    30
    PBLS1501
    6
    -
    -
    -
    2
    -
    -
    SWITCHING
    -
    1 NPN Pre-Biased, 1 PNP
    30 @ 20mA 5V / 150 @ 100mA 2V
    1μA 100nA
    150mV @ 500μA, 10mA / 250mV @ 50mA, 500mA
    50V 15V
    100mA 500mA
    280MHz
    280MHz
    -
    2.2k Ω
    2.2k Ω
    ROHS3 Compliant
    4 Weeks
    Surface Mount
    6
    150°C
    -65°C
    300mW
    NPN, PNP
    2
    Dual
    150mV
    500mA
    15V
    15V
    500mA
    600μm
    1.7mm
    1.3mm
    No
    Lead Free
    -
    -
    -
  • PBLS6003D,115
    Surface Mount
    SC-74, SOT-457
    -
    -
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    BUILT IN BIAS RESISTOR RATIO IS 1
    -
    -
    GULL WING
    260
    30
    PBLS6003
    6
    -
    -
    -
    2
    -
    -
    SWITCHING
    -
    1 NPN Pre-Biased, 1 PNP
    30 @ 5mA 5V / 150 @ 500mA 5V
    1μA 100nA
    150mV @ 500μA, 10mA / 340mV @ 100mA, 1A
    50V 60V
    100mA 700mA
    185MHz
    185MHz
    -
    10k Ω
    10k Ω
    ROHS3 Compliant
    4 Weeks
    Surface Mount
    6
    150°C
    -65°C
    600mW
    NPN, PNP
    -
    Dual
    150mV
    700mA
    60V
    60V
    -
    -
    -
    -
    No
    Lead Free
    -
    -
    -
  • PBLS2002S,115
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    Tape & Reel (TR)
    2009
    e4
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    BUILT-IN BIAS RESISTOR RATIO IS 1
    Other Transistors
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    PBLS2002
    8
    R-PDSO-G8
    Not Qualified
    150°C
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    1.5W
    SWITCHING
    NPN AND PNP
    1 NPN Pre-Biased, 1 PNP
    30 @ 10mA 5V / 150 @ 2A 2V
    1μA 100nA
    150mV @ 500μA, 10mA / 355mV @ 300mA, 3A
    50V 20V
    100mA 3A
    100MHz
    100MHz
    1.5W
    4.7k Ω
    4.7k Ω
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    8541.21.00.95
    205ns
    41ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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