PBLS2001D,115

Nexperia USA Inc. PBLS2001D,115

Part Number:
PBLS2001D,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2844514-PBLS2001D,115
Description:
TRANS NPN PREBIAS/PNP 0.6W 6TSOP
ECAD Model:
Datasheet:
PBLS2001D,115

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Specifications
Nexperia USA Inc. PBLS2001D,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBLS2001D,115.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • Max Power Dissipation
    600mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    PBLS2001
  • Pin Count
    6
  • Max Output Current
    100mA
  • Operating Supply Voltage
    20V
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Element Configuration
    Dual
  • Power Dissipation
    400mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Collector Emitter Voltage (VCEO)
    150mV
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 20mA 5V / 220 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    1μA 100nA
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500μA, 10mA / 280mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    20V
  • Voltage - Collector Emitter Breakdown (Max)
    50V 20V
  • Current - Collector (Ic) (Max)
    100mA 1A
  • Transition Frequency
    185MHz
  • Max Breakdown Voltage
    20V
  • Frequency - Transition
    185MHz
  • Emitter Base Voltage (VEBO)
    -5V
  • Resistor - Base (R1)
    2.2k Ω
  • Continuous Collector Current
    -1A
  • Resistor - Emitter Base (R2)
    2.2k Ω
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PBLS2001D,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PBLS2001D,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBLS2001D,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PBLS2001D,115 More Descriptions
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French Electronic Distributor since 1988
STANDARD MARKING * REEL PACK, SMD, 7'
NOW NEXPERIA PBLS2001D - SMALL S
Product Comparison
The three parts on the right have similar specifications to PBLS2001D,115.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Max Output Current
    Operating Supply Voltage
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Max Breakdown Voltage
    Frequency - Transition
    Emitter Base Voltage (VEBO)
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    HTS Code
    Subcategory
    Terminal Position
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Power - Max
    Polarity/Channel Type
    Power Dissipation-Max (Abs)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    View Compare
  • PBLS2001D,115
    PBLS2001D,115
    4 Weeks
    Surface Mount
    Surface Mount
    SC-74, SOT-457
    6
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -65°C
    BUILT-IN BIAS RESISTOR RATIO IS 1
    600mW
    GULL WING
    260
    30
    PBLS2001
    6
    100mA
    20V
    2
    NPN, PNP
    Dual
    400mW
    SWITCHING
    1 NPN Pre-Biased, 1 PNP
    150mV
    1A
    30 @ 20mA 5V / 220 @ 500mA 2V
    1μA 100nA
    150mV @ 500μA, 10mA / 280mV @ 100mA, 1A
    20V
    50V 20V
    100mA 1A
    185MHz
    20V
    185MHz
    -5V
    2.2k Ω
    -1A
    2.2k Ω
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PBLS6003D,115
    4 Weeks
    Surface Mount
    Surface Mount
    SC-74, SOT-457
    6
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -65°C
    BUILT IN BIAS RESISTOR RATIO IS 1
    600mW
    GULL WING
    260
    30
    PBLS6003
    6
    -
    -
    2
    NPN, PNP
    Dual
    -
    SWITCHING
    1 NPN Pre-Biased, 1 PNP
    150mV
    700mA
    30 @ 5mA 5V / 150 @ 500mA 5V
    1μA 100nA
    150mV @ 500μA, 10mA / 340mV @ 100mA, 1A
    60V
    50V 60V
    100mA 700mA
    185MHz
    60V
    185MHz
    -
    10k Ω
    -
    10k Ω
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PBLS4001Y,115
    4 Weeks
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -65°C
    BUILT IN BIAS RESISTOR RATIO 1
    300mW
    GULL WING
    260
    30
    PBLS4001
    6
    -
    -
    2
    NPN, PNP
    Dual
    -
    SWITCHING
    1 NPN Pre-Biased, 1 PNP
    150mV
    500mA
    30 @ 20mA 5V / 150 @ 100mA 2V
    1μA
    150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA
    40V
    50V 40V
    100mA 500mA
    300MHz
    40V
    300MHz
    -
    2.2k Ω
    -
    2.2k Ω
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PBLS2001S,115
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    Tape & Reel (TR)
    2009
    e4
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    BUILT-IN BIAS RESISTOR RATIO IS 1
    -
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    PBLS2001
    8
    -
    -
    2
    -
    -
    -
    SWITCHING
    1 NPN Pre-Biased, 1 PNP
    -
    -
    30 @ 20mA 5V / 150 @ 2A 2V
    1μA 100nA
    150mV @ 500μA, 10mA / 355mV @ 300mA, 3A
    -
    50V 20V
    100mA 3A
    100MHz
    -
    100MHz
    -
    2.2k Ω
    -
    2.2k Ω
    -
    ROHS3 Compliant
    -
    YES
    SILICON
    8541.21.00.95
    Other Transistors
    DUAL
    R-PDSO-G8
    Not Qualified
    150°C
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    1.5W
    NPN AND PNP
    1.5W
    205ns
    41ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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