PBLS2001S,115

NXP USA Inc. PBLS2001S,115

Part Number:
PBLS2001S,115
Manufacturer:
NXP USA Inc.
Ventron No:
2844620-PBLS2001S,115
Description:
TRANS NPN PREBIAS/PNP 1.5W 8SO
ECAD Model:
Datasheet:
PBLS2001S

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Specifications
NXP USA Inc. PBLS2001S,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PBLS2001S,115.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e4
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    PBLS2001
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    150°C
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Power - Max
    1.5W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN AND PNP
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 20mA 5V / 150 @ 2A 2V
  • Current - Collector Cutoff (Max)
    1μA 100nA
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500μA, 10mA / 355mV @ 300mA, 3A
  • Voltage - Collector Emitter Breakdown (Max)
    50V 20V
  • Current - Collector (Ic) (Max)
    100mA 3A
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • Power Dissipation-Max (Abs)
    1.5W
  • Resistor - Base (R1)
    2.2k Ω
  • Resistor - Emitter Base (R2)
    2.2k Ω
  • Turn Off Time-Max (toff)
    205ns
  • Turn On Time-Max (ton)
    41ns
  • RoHS Status
    ROHS3 Compliant
Description
PBLS2001S,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PBLS2001S,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBLS2001S,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PBLS2001S,115 More Descriptions
Trans Digital BJT NPN/PNP 50V/20V 100mA/3A 8-Pin SO T/R
TRANS NPN PREBIAS/PNP 1.5W 8SO
SMALL SIGNAL BIPOLAR TRANSISTOR,
PBLS2001S - 20 V PNP BISS loadswitch
STANDARD MARKING * REEL PACK, SMD, 7'
Product Comparison
The three parts on the right have similar specifications to PBLS2001S,115.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    Power Dissipation-Max (Abs)
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    RoHS Status
    Factory Lead Time
    Mount
    Number of Pins
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Polarity
    Element Configuration
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Radiation Hardening
    Lead Free
    Power Dissipation
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Max Output Current
    Operating Supply Voltage
    View Compare
  • PBLS2001S,115
    PBLS2001S,115
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    Tape & Reel (TR)
    2009
    e4
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    BUILT-IN BIAS RESISTOR RATIO IS 1
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    PBLS2001
    8
    R-PDSO-G8
    Not Qualified
    150°C
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    1.5W
    SWITCHING
    NPN AND PNP
    1 NPN Pre-Biased, 1 PNP
    30 @ 20mA 5V / 150 @ 2A 2V
    1μA 100nA
    150mV @ 500μA, 10mA / 355mV @ 300mA, 3A
    50V 20V
    100mA 3A
    100MHz
    100MHz
    1.5W
    2.2k Ω
    2.2k Ω
    205ns
    41ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PBLS6003D,115
    Surface Mount
    SC-74, SOT-457
    -
    -
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    BUILT IN BIAS RESISTOR RATIO IS 1
    -
    -
    -
    GULL WING
    260
    30
    PBLS6003
    6
    -
    -
    -
    2
    -
    -
    SWITCHING
    -
    1 NPN Pre-Biased, 1 PNP
    30 @ 5mA 5V / 150 @ 500mA 5V
    1μA 100nA
    150mV @ 500μA, 10mA / 340mV @ 100mA, 1A
    50V 60V
    100mA 700mA
    185MHz
    185MHz
    -
    10k Ω
    10k Ω
    -
    -
    ROHS3 Compliant
    4 Weeks
    Surface Mount
    6
    150°C
    -65°C
    600mW
    NPN, PNP
    Dual
    150mV
    700mA
    60V
    60V
    No
    Lead Free
    -
    -
    -
    -
    -
    -
  • PBLS2023D,115
    Surface Mount
    SC-74, SOT-457
    -
    -
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    -
    Tin (Sn)
    BUILT IN BIAS RESISTOR RATIO IS 1
    -
    -
    -
    GULL WING
    -
    -
    -
    6
    -
    -
    -
    2
    -
    -
    SWITCHING
    -
    1 PNP Pre-Biased, 1 PNP
    30 @ 5mA 5V / 200 @ 1A 2V
    1μA 100nA
    150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A
    50V 20V
    100mA 1.8A
    -
    130MHz
    -
    10k Ω
    10k Ω
    -
    -
    ROHS3 Compliant
    4 Weeks
    Surface Mount
    6
    150°C
    -55°C
    760mW
    PNP
    Dual
    150mV
    1.8A
    20V
    20V
    No
    Lead Free
    370mW
    -5V
    220
    -1.8A
    -
    -
  • PBLS2001D,115
    Surface Mount
    SC-74, SOT-457
    -
    -
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    BUILT-IN BIAS RESISTOR RATIO IS 1
    -
    -
    -
    GULL WING
    260
    30
    PBLS2001
    6
    -
    -
    -
    2
    -
    -
    SWITCHING
    -
    1 NPN Pre-Biased, 1 PNP
    30 @ 20mA 5V / 220 @ 500mA 2V
    1μA 100nA
    150mV @ 500μA, 10mA / 280mV @ 100mA, 1A
    50V 20V
    100mA 1A
    185MHz
    185MHz
    -
    2.2k Ω
    2.2k Ω
    -
    -
    ROHS3 Compliant
    4 Weeks
    Surface Mount
    6
    150°C
    -65°C
    600mW
    NPN, PNP
    Dual
    150mV
    1A
    20V
    20V
    No
    Lead Free
    400mW
    -5V
    -
    -1A
    100mA
    20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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