NXP USA Inc. PBLS2002S,115
- Part Number:
- PBLS2002S,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2844827-PBLS2002S,115
- Description:
- TRANS NPN PREBIAS/PNP 1.5W 8SO
- Datasheet:
- PBLS2002S
NXP USA Inc. PBLS2002S,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PBLS2002S,115.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee4
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberPBLS2002
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power - Max1.5W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN AND PNP
- Transistor Type1 NPN Pre-Biased, 1 PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA 5V / 150 @ 2A 2V
- Current - Collector Cutoff (Max)1μA 100nA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA / 355mV @ 300mA, 3A
- Voltage - Collector Emitter Breakdown (Max)50V 20V
- Current - Collector (Ic) (Max)100mA 3A
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)1.5W
- Resistor - Base (R1)4.7k Ω
- Resistor - Emitter Base (R2)4.7k Ω
- Turn Off Time-Max (toff)205ns
- Turn On Time-Max (ton)41ns
- RoHS StatusROHS3 Compliant
PBLS2002S,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PBLS2002S,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBLS2002S,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PBLS2002S,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBLS2002S,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PBLS2002S,115 More Descriptions
Bipolar (BJT) Single Transistor, NPN, PNP, -20 V, 100 MHz, 700 mW, -3 A, 420
Trans Digital BJT NPN/PNP 50V/20V 100mA/3A Automotive 8-Pin SO T/R
TRANS NPN PREBIAS/PNP 1.5W 8SO
SMALL SIGNAL BIPOLAR TRANSISTOR,
PBLS2002S - 20 V PNP BISS loadswitch
French Electronic Distributor since 1988
Trans Digital BJT NPN/PNP 50V/20V 100mA/3A Automotive 8-Pin SO T/R
TRANS NPN PREBIAS/PNP 1.5W 8SO
SMALL SIGNAL BIPOLAR TRANSISTOR,
PBLS2002S - 20 V PNP BISS loadswitch
French Electronic Distributor since 1988
The three parts on the right have similar specifications to PBLS2002S,115.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)Resistor - Base (R1)Resistor - Emitter Base (R2)Turn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusFactory Lead TimeMountNumber of PinsMax Operating TemperatureMin Operating TemperatureMax Power DissipationPolarityElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageEmitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRadiation HardeningLead FreeView Compare
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PBLS2002S,115Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICONTape & Reel (TR)2009e4Obsolete1 (Unlimited)8EAR99Nickel/Palladium/Gold (Ni/Pd/Au)BUILT-IN BIAS RESISTOR RATIO IS 18541.21.00.95Other TransistorsDUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDPBLS20028R-PDSO-G8Not Qualified150°C2SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR1.5WSWITCHINGNPN AND PNP1 NPN Pre-Biased, 1 PNP30 @ 10mA 5V / 150 @ 2A 2V1μA 100nA150mV @ 500μA, 10mA / 355mV @ 300mA, 3A50V 20V100mA 3A100MHz100MHz1.5W4.7k Ω4.7k Ω205ns41nsROHS3 Compliant-------------------
-
Surface MountSC-74, SOT-457--Tape & Reel (TR)2009e3Active1 (Unlimited)6-Tin (Sn)BUILT IN BIAS RESISTOR RATIO IS 1---GULL WING---6---2--SWITCHING-1 PNP Pre-Biased, 1 PNP30 @ 5mA 5V / 200 @ 1A 2V1μA 100nA150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A50V 20V100mA 1.8A-130MHz-10k Ω10k Ω--ROHS3 Compliant4 WeeksSurface Mount6150°C-55°C760mWPNPDual370mW150mV1.8A20V20V-5V220-1.8ANoLead Free
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Surface MountSOT-563, SOT-666YESSILICONTape & Reel (TR)2009e3Obsolete1 (Unlimited)6EAR99Tin (Sn)BUILT IN BIAS RESISTOR RATIO IS 1-Other TransistorsDUALFLATNOT SPECIFIEDNOT SPECIFIEDPBLS40036R-PDSO-F6Not Qualified150°C2SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mWSWITCHINGNPN AND PNP1 NPN Pre-Biased, 1 PNP30 @ 5mA 5V / 150 @ 100mA. 2V1μA150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA50V 40V100mA 500mA300MHz300MHz0.3W10k Ω10k Ω--ROHS3 Compliant------------------
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Surface MountSC-74, SOT-457--Tape & Reel (TR)2009e3Active1 (Unlimited)6EAR99Tin (Sn)----GULL WING26030PBLS40046---2--SWITCHING-1 NPN Pre-Biased, 1 PNP60 @ 5mA 5V / 300 @ 100mA 5V1μA 100nA150mV @ 500μA, 10mA / 310mV @ 100mA, 1A50V 40V100mA 700mA-150MHz-22k Ω22k Ω--ROHS3 Compliant4 WeeksSurface Mount6150°C-65°C600mWNPN, PNPDual-150mV700mA40V40V---No-
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