Nexperia USA Inc. PBLS2023D,115
- Part Number:
- PBLS2023D,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3068450-PBLS2023D,115
- Description:
- TRANS PREBIAS DUAL PNP 6TSOP
- Datasheet:
- PBLS2023D,115
Nexperia USA Inc. PBLS2023D,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBLS2023D,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- Max Power Dissipation760mW
- Terminal FormGULL WING
- Pin Count6
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Power Dissipation370mW
- Transistor ApplicationSWITCHING
- Transistor Type1 PNP Pre-Biased, 1 PNP
- Collector Emitter Voltage (VCEO)150mV
- Max Collector Current1.8A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V / 200 @ 1A 2V
- Current - Collector Cutoff (Max)1μA 100nA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A
- Collector Emitter Breakdown Voltage20V
- Voltage - Collector Emitter Breakdown (Max)50V 20V
- Current - Collector (Ic) (Max)100mA 1.8A
- Max Breakdown Voltage20V
- Frequency - Transition130MHz
- Emitter Base Voltage (VEBO)-5V
- hFE Min220
- Resistor - Base (R1)10k Ω
- Continuous Collector Current-1.8A
- Resistor - Emitter Base (R2)10k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBLS2023D,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PBLS2023D,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBLS2023D,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PBLS2023D,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBLS2023D,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PBLS2023D,115 More Descriptions
Trans Digital BJT PNP 50V/20V 100mA/1.8A Automotive 6-Pin TSOP T/R
PBLS2023D - 20 V, 1.8 A PNP BISS loadswitch
BISS LOADSWITCH, PNP BISS & NPN RET, -20V, -1.8A, 10KOHM, SOT-457; Collector Emitter Voltage V(br)ceo:-20V; Continuous Collector Current Ic:-1.8A; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm ;RoHS Compliant: Yes
PBLS2023D - 20 V, 1.8 A PNP BISS loadswitch
BISS LOADSWITCH, PNP BISS & NPN RET, -20V, -1.8A, 10KOHM, SOT-457; Collector Emitter Voltage V(br)ceo:-20V; Continuous Collector Current Ic:-1.8A; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm ;RoHS Compliant: Yes
The three parts on the right have similar specifications to PBLS2023D,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureMax Power DissipationTerminal FormPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialECCN CodeHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationPower - MaxPolarity/Channel TypeTransition FrequencyPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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PBLS2023D,1154 WeeksSurface MountSurface MountSC-74, SOT-4576Tape & Reel (TR)2009e3Active1 (Unlimited)6Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1760mWGULL WING62PNPDual370mWSWITCHING1 PNP Pre-Biased, 1 PNP150mV1.8A30 @ 5mA 5V / 200 @ 1A 2V1μA 100nA150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A20V50V 20V100mA 1.8A20V130MHz-5V22010k Ω-1.8A10k ΩNoROHS3 CompliantLead Free--------------------
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--Surface Mount8-SOIC (0.154, 3.90mm Width)-Tape & Reel (TR)2009e4Obsolete1 (Unlimited)8Nickel/Palladium/Gold (Ni/Pd/Au)--BUILT-IN BIAS RESISTOR RATIO IS 1-GULL WING82---SWITCHING1 NPN Pre-Biased, 1 PNP--30 @ 10mA 5V / 150 @ 2A 2V1μA 100nA150mV @ 500μA, 10mA / 355mV @ 300mA, 3A-50V 20V100mA 3A-100MHz--4.7k Ω-4.7k Ω-ROHS3 Compliant-YESSILICONEAR998541.21.00.95Other TransistorsDUALNOT SPECIFIEDNOT SPECIFIEDPBLS2002R-PDSO-G8Not Qualified150°CSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR1.5WNPN AND PNP100MHz1.5W205ns41ns
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--Surface MountSOT-563, SOT-666-Tape & Reel (TR)2009e3Obsolete1 (Unlimited)6Tin (Sn)--BUILT IN BIAS RESISTOR RATIO IS 1-FLAT62---SWITCHING1 NPN Pre-Biased, 1 PNP--30 @ 5mA 5V / 150 @ 100mA. 2V1μA150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA-50V 40V100mA 500mA-300MHz--10k Ω-10k Ω-ROHS3 Compliant-YESSILICONEAR99-Other TransistorsDUALNOT SPECIFIEDNOT SPECIFIEDPBLS4003R-PDSO-F6Not Qualified150°CSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mWNPN AND PNP300MHz0.3W--
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4 WeeksSurface MountSurface MountSC-74, SOT-4576Tape & Reel (TR)2009e3Active1 (Unlimited)6Tin (Sn)150°C-65°C-600mWGULL WING62NPN, PNPDual-SWITCHING1 NPN Pre-Biased, 1 PNP150mV700mA60 @ 5mA 5V / 300 @ 100mA 5V1μA 100nA150mV @ 500μA, 10mA / 310mV @ 100mA, 1A40V50V 40V100mA 700mA40V150MHz--22k Ω-22k ΩNoROHS3 Compliant---EAR99---26030PBLS4004----------
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