PBLS2023D,115

Nexperia USA Inc. PBLS2023D,115

Part Number:
PBLS2023D,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
3068450-PBLS2023D,115
Description:
TRANS PREBIAS DUAL PNP 6TSOP
ECAD Model:
Datasheet:
PBLS2023D,115

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Specifications
Nexperia USA Inc. PBLS2023D,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBLS2023D,115.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO IS 1
  • Max Power Dissipation
    760mW
  • Terminal Form
    GULL WING
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    PNP
  • Element Configuration
    Dual
  • Power Dissipation
    370mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    1 PNP Pre-Biased, 1 PNP
  • Collector Emitter Voltage (VCEO)
    150mV
  • Max Collector Current
    1.8A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA 5V / 200 @ 1A 2V
  • Current - Collector Cutoff (Max)
    1μA 100nA
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A
  • Collector Emitter Breakdown Voltage
    20V
  • Voltage - Collector Emitter Breakdown (Max)
    50V 20V
  • Current - Collector (Ic) (Max)
    100mA 1.8A
  • Max Breakdown Voltage
    20V
  • Frequency - Transition
    130MHz
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    220
  • Resistor - Base (R1)
    10k Ω
  • Continuous Collector Current
    -1.8A
  • Resistor - Emitter Base (R2)
    10k Ω
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PBLS2023D,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PBLS2023D,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBLS2023D,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PBLS2023D,115 More Descriptions
Trans Digital BJT PNP 50V/20V 100mA/1.8A Automotive 6-Pin TSOP T/R
PBLS2023D - 20 V, 1.8 A PNP BISS loadswitch
BISS LOADSWITCH, PNP BISS & NPN RET, -20V, -1.8A, 10KOHM, SOT-457; Collector Emitter Voltage V(br)ceo:-20V; Continuous Collector Current Ic:-1.8A; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PBLS2023D,115.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Max Power Dissipation
    Terminal Form
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Max Breakdown Voltage
    Frequency - Transition
    Emitter Base Voltage (VEBO)
    hFE Min
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    ECCN Code
    HTS Code
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Power - Max
    Polarity/Channel Type
    Transition Frequency
    Power Dissipation-Max (Abs)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    View Compare
  • PBLS2023D,115
    PBLS2023D,115
    4 Weeks
    Surface Mount
    Surface Mount
    SC-74, SOT-457
    6
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    Tin (Sn)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO IS 1
    760mW
    GULL WING
    6
    2
    PNP
    Dual
    370mW
    SWITCHING
    1 PNP Pre-Biased, 1 PNP
    150mV
    1.8A
    30 @ 5mA 5V / 200 @ 1A 2V
    1μA 100nA
    150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A
    20V
    50V 20V
    100mA 1.8A
    20V
    130MHz
    -5V
    220
    10k Ω
    -1.8A
    10k Ω
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PBLS2002S,115
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    Tape & Reel (TR)
    2009
    e4
    Obsolete
    1 (Unlimited)
    8
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    BUILT-IN BIAS RESISTOR RATIO IS 1
    -
    GULL WING
    8
    2
    -
    -
    -
    SWITCHING
    1 NPN Pre-Biased, 1 PNP
    -
    -
    30 @ 10mA 5V / 150 @ 2A 2V
    1μA 100nA
    150mV @ 500μA, 10mA / 355mV @ 300mA, 3A
    -
    50V 20V
    100mA 3A
    -
    100MHz
    -
    -
    4.7k Ω
    -
    4.7k Ω
    -
    ROHS3 Compliant
    -
    YES
    SILICON
    EAR99
    8541.21.00.95
    Other Transistors
    DUAL
    NOT SPECIFIED
    NOT SPECIFIED
    PBLS2002
    R-PDSO-G8
    Not Qualified
    150°C
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    1.5W
    NPN AND PNP
    100MHz
    1.5W
    205ns
    41ns
  • PBLS4003V,115
    -
    -
    Surface Mount
    SOT-563, SOT-666
    -
    Tape & Reel (TR)
    2009
    e3
    Obsolete
    1 (Unlimited)
    6
    Tin (Sn)
    -
    -
    BUILT IN BIAS RESISTOR RATIO IS 1
    -
    FLAT
    6
    2
    -
    -
    -
    SWITCHING
    1 NPN Pre-Biased, 1 PNP
    -
    -
    30 @ 5mA 5V / 150 @ 100mA. 2V
    1μA
    150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA
    -
    50V 40V
    100mA 500mA
    -
    300MHz
    -
    -
    10k Ω
    -
    10k Ω
    -
    ROHS3 Compliant
    -
    YES
    SILICON
    EAR99
    -
    Other Transistors
    DUAL
    NOT SPECIFIED
    NOT SPECIFIED
    PBLS4003
    R-PDSO-F6
    Not Qualified
    150°C
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    300mW
    NPN AND PNP
    300MHz
    0.3W
    -
    -
  • PBLS4004D,115
    4 Weeks
    Surface Mount
    Surface Mount
    SC-74, SOT-457
    6
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    Tin (Sn)
    150°C
    -65°C
    -
    600mW
    GULL WING
    6
    2
    NPN, PNP
    Dual
    -
    SWITCHING
    1 NPN Pre-Biased, 1 PNP
    150mV
    700mA
    60 @ 5mA 5V / 300 @ 100mA 5V
    1μA 100nA
    150mV @ 500μA, 10mA / 310mV @ 100mA, 1A
    40V
    50V 40V
    100mA 700mA
    40V
    150MHz
    -
    -
    22k Ω
    -
    22k Ω
    No
    ROHS3 Compliant
    -
    -
    -
    EAR99
    -
    -
    -
    260
    30
    PBLS4004
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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