Fairchild/ON Semiconductor NZT651

Name: NZT651
Brand: Fairchild/ON Semiconductor
SKU: 2464621-NZT651
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NZT651

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2464621-NZT651

Description:: TRANS NPN 60V 4A SOT223

ECAD Model:

Datasheet:: NZT651

Specifications

Fairchild/ON Semiconductor NZT651 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NZT651.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
45 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
1.2W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
4A
Frequency
75MHz
Base Part Number
NZT651
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
75MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
75MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
75
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NZT651 Overview
This device has a DC current gain of 40 @ 2A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 4A volts is possible.

NZT651 Features
the DC current gain for this device is 40 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 75MHz

NZT651 Applications
There are a lot of ON Semiconductor
NZT651 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

NZT651 More Descriptions

Bipolar Transistors - BJT NPN Transistor Current Driver
NZT651 Series 60 V 4 A 1.2 W SMT NPN General Purpose Amplifier - SOT-223
Small Signal Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 60V 4A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
TRANSISTOR, NPN, 60V, 4A, SOT-223-4
60V 1.2W 4A 40@2A2V 75MHz 500mV@2A200mA NPN -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
NPN Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4P.
Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:1.2W; DC Current Gain Min (hfe):40; Package/Case:SOT-223; C-E Breakdown Voltage:60V; DC Collector Current:4A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, NPN, 60V, 4A, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 75MHz; Power Dissipation Pd: 1.2W; ; Available until stocks are exhausted Alternative available

Product Comparison

The three parts on the right have similar specifications to NZT651.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Current Rating

Frequency

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Published

REACH SVHC

JESD-30 Code

Polarity

Frequency - Transition

Max Junction Temperature (Tj)

View Compare
NZT651

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

45 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

188mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

4

EAR99

Tin (Sn)

Other Transistors

60V

1.2W

DUAL

GULL WING

4A

75MHz

NZT651

1

Single

1.2W

COLLECTOR

SWITCHING

75MHz

NPN

NPN

60V

4A

40 @ 2A 2V

100nA ICBO

500mV @ 200mA, 2A

60V

75MHz

500mV

60V

80V

5V

75

6.35mm

6.35mm

6.35mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
NZT660

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

17 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

188mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

4

EAR99

-

Other Transistors

-60V

2W

DUAL

GULL WING

-3A

75MHz

NZT660

1

Single

2W

COLLECTOR

-

75MHz

PNP

PNP

60V

3A

100 @ 500mA 2V

100nA ICBO

550mV @ 300mA, 3A

60V

75MHz

550mV

60V

-80V

-5V

100

1.7mm

6.7mm

3.7mm

No

ROHS3 Compliant

Lead Free

Tin

2017

No SVHC

-

-

-

-

NZT651 vs NZT660
NZT605

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

22 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

-

188mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

4

EAR99

Tin (Sn)

Other Transistors

11V

1W

DUAL

GULL WING

1.5A

-

NZT605

1

Single

1W

COLLECTOR

-

-

-

NPN - Darlington

110V

1.5A

2000 @ 1A 5V

10nA ICBO

1.5V @ 1mA, 1A

110V

150MHz

1.5V

110V

140V

10V

200

1.8mm

6.5mm

3.56mm

No

ROHS3 Compliant

Lead Free

-

1997

-

R-PDSO-G4

NPN

150MHz

150°C

NZT651 vs NZT605
NZT6717

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 4 days ago)

6 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

188mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

4

EAR99

Tin (Sn)

Other Transistors

80V

1W

DUAL

GULL WING

1.2A

-

NZT6717

1

Single

1W

COLLECTOR

SWITCHING

-

NPN

NPN

80V

1.2A

50 @ 250mA 1V

100nA ICBO

350mV @ 10mA, 250mA

80V

-

350mV

80V

80V

5V

50

-

-

-

No

ROHS3 Compliant

Lead Free

-

2014

-

-

-

-

-

NZT651 vs NZT6717