Fairchild/ON Semiconductor NZT660A
- Part Number:
- NZT660A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3068939-NZT660A
- Description:
- TRANS PNP 60V 3A SOT223
- Datasheet:
- NZT660A
Fairchild/ON Semiconductor NZT660A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NZT660A.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time24 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight188mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-3A
- Frequency75MHz
- Base Part NumberNZT660
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product75MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency75MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-5V
- hFE Min250
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NZT660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In this part, there is a transition frequency of 75MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 3A volts.
NZT660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 75MHz
NZT660A Applications
There are a lot of ON Semiconductor
NZT660A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In this part, there is a transition frequency of 75MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 3A volts.
NZT660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 75MHz
NZT660A Applications
There are a lot of ON Semiconductor
NZT660A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NZT660A More Descriptions
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT PNP 60V 3A 2000mW 4-Pin(3 Tab) SOT-223 T/R / TRANS PNP 60V 3A SOT223
TRANSISTOR,BJT,PNP,60V V(BR)CEO,3A I(C),SOT-223
NZT660A Series 2 W 60 V Surface Mount PNP General Purpose Amplifier - SOT-223
60V 2W 3A 250@500mA2V 75MHz PNP 500mV@3A300mA -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -60V, SOT-223-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:75MHz; Power
These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.
Trans GP BJT PNP 60V 3A 2000mW 4-Pin(3 Tab) SOT-223 T/R / TRANS PNP 60V 3A SOT223
TRANSISTOR,BJT,PNP,60V V(BR)CEO,3A I(C),SOT-223
NZT660A Series 2 W 60 V Surface Mount PNP General Purpose Amplifier - SOT-223
60V 2W 3A 250@500mA2V 75MHz PNP 500mV@3A300mA -55¡Í~ 150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Transistor, BIPOL, PNP, -60V, SOT-223-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:75MHz; Power
These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.
The three parts on the right have similar specifications to NZT660A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationCase ConnectionGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusLead FreePublishedTransistor ApplicationContact PlatingHeightLengthWidthView Compare
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NZT660AACTIVE (Last Updated: 4 days ago)24 WeeksSurface MountSurface MountTO-261-4, TO-261AA4188mgSILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)4EAR99Tin (Sn)Other Transistors-60V2WDUALGULL WING-3A75MHzNZT6601Single2WCOLLECTOR75MHzPNPPNP60V3A250 @ 500mA 2V100nA ICBO500mV @ 300mA, 3A60V75MHz500mV60V-60V-5V250No SVHCNoROHS3 CompliantLead Free-------
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LAST SHIPMENTS (Last Updated: 1 week ago)-Surface MountSurface MountTO-261-4, TO-261AA4188mgSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)4EAR99Tin (Sn)Other Transistors-80V1WDUALGULL WING-1A-NZT67291Single1WCOLLECTOR-PNPPNP80V1A50 @ 250mA 1V100nA ICBO500mV @ 10mA, 250mA80V-500mV80V-80V-5V50-NoROHS3 CompliantLead Free2000SWITCHING----
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ACTIVE (Last Updated: 4 days ago)17 WeeksSurface MountSurface MountTO-261-4, TO-261AA4188mgSILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)4EAR99-Other Transistors-60V2WDUALGULL WING-3A75MHzNZT6601Single2WCOLLECTOR75MHzPNPPNP60V3A100 @ 500mA 2V100nA ICBO550mV @ 300mA, 3A60V75MHz550mV60V-80V-5V100No SVHCNoROHS3 CompliantLead Free2017-Tin1.7mm6.7mm3.7mm
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ACTIVE (Last Updated: 4 days ago)45 WeeksSurface MountSurface MountTO-261-4, TO-261AA4188mgSILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)4EAR99Tin (Sn)Other Transistors60V1.2WDUALGULL WING4A75MHzNZT6511Single1.2WCOLLECTOR75MHzNPNNPN60V4A40 @ 2A 2V100nA ICBO500mV @ 200mA, 2A60V75MHz500mV60V80V5V75-NoROHS3 CompliantLead Free-SWITCHING-6.35mm6.35mm6.35mm
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