Nexperia USA Inc. NX3008NBKMB,315
- Part Number:
- NX3008NBKMB,315
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2482570-NX3008NBKMB,315
- Description:
- MOSFET N-CH 30V 530MA 3DFN
- Datasheet:
- NX3008NBKMB,315
Nexperia USA Inc. NX3008NBKMB,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. NX3008NBKMB,315.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case3-XFDFN
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Pin Count3
- Number of Elements1
- Power Dissipation-Max360mW Ta 2.7W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation715mW
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.4 Ω @ 350mA, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 15V
- Current - Continuous Drain (Id) @ 25°C530mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.68nC @ 4.5V
- Rise Time11ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time69 ns
- Continuous Drain Current (ID)530mA
- Gate to Source Voltage (Vgs)8V
- Max Dual Supply Voltage30V
- Drain to Source Breakdown Voltage30V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
NX3008NBKMB,315 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 530mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 69 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Powered by 30V, it supports the maximal dual supply voltage.By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
NX3008NBKMB,315 Features
a continuous drain current (ID) of 530mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 69 ns
NX3008NBKMB,315 Applications
There are a lot of Nexperia USA Inc.
NX3008NBKMB,315 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 530mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 69 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Powered by 30V, it supports the maximal dual supply voltage.By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
NX3008NBKMB,315 Features
a continuous drain current (ID) of 530mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 69 ns
NX3008NBKMB,315 Applications
There are a lot of Nexperia USA Inc.
NX3008NBKMB,315 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
NX3008NBKMB,315 More Descriptions
Mosfet Transistor, N Channel, 530 Ma, 30 V, 1 Ohm, 4.5 V, 900 Mv Rohs Compliant: Yes
Single N-Channel 30 V 1.4 Ohm 0.68 nC 715 mW Silicon SMT Mosfet - SOT-883
MOSFET, N-CH, 30V, 0.53A, SOT883B-3; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Source Voltage Vds:30V; On Resistance
MOSFET, N-CH, 30V, 0.53A, SOT883B-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 530mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Power Dissipation Pd: 360mW; Transistor Case Style: SOT-883B; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Single N-Channel 30 V 1.4 Ohm 0.68 nC 715 mW Silicon SMT Mosfet - SOT-883
MOSFET, N-CH, 30V, 0.53A, SOT883B-3; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Source Voltage Vds:30V; On Resistance
MOSFET, N-CH, 30V, 0.53A, SOT883B-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 530mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Power Dissipation Pd: 360mW; Transistor Case Style: SOT-883B; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
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