NTMFS5C646NLT1G

ON Semiconductor NTMFS5C646NLT1G

Part Number:
NTMFS5C646NLT1G
Manufacturer:
ON Semiconductor
Ventron No:
2484956-NTMFS5C646NLT1G
Description:
MOSFET N-CH 60V 32A SO-8FL
ECAD Model:
Datasheet:
NTMFS5C646NLT1G

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Specifications
ON Semiconductor NTMFS5C646NLT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMFS5C646NLT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.7W Ta 79W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10.4 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    4.7m Ω @ 50A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2164pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    19A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    33.7nC @ 10V
  • Rise Time
    14.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5.1 ns
  • Turn-Off Delay Time
    23.6 ns
  • Continuous Drain Current (ID)
    19A
  • Threshold Voltage
    2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0063Ohm
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    750A
  • Height
    1.05mm
  • Length
    6.1mm
  • Width
    5.1mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTMFS5C646NLT1G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2164pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 19A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23.6 ns.Peak drain current is 750A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

NTMFS5C646NLT1G Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23.6 ns
based on its rated peak drain current 750A.
a threshold voltage of 2V


NTMFS5C646NLT1G Applications
There are a lot of ON Semiconductor
NTMFS5C646NLT1G applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
NTMFS5C646NLT1G More Descriptions
ON SEMICONDUCTOR NTMFS5C646NLT1GMOSFET Transistor, N Channel, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V
NTMFS5C646NLT1G N-channel MOSFET Transistor, 89 A, 60 V, 8-Pin SO-8FL | ON Semiconductor NTMFS5C646NLT1G
NFET SO8FL 60V 92A 4.5MOH; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Diss
Product Comparison
The three parts on the right have similar specifications to NTMFS5C646NLT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Surface Mount
    Subcategory
    Pin Count
    Qualification Status
    Power Dissipation
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    View Compare
  • NTMFS5C646NLT1G
    NTMFS5C646NLT1G
    ACTIVE (Last Updated: 1 day ago)
    16 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2014
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PDSO-F5
    1
    1
    3.7W Ta 79W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    10.4 ns
    N-Channel
    4.7m Ω @ 50A, 10V
    2V @ 250μA
    2164pF @ 25V
    19A Ta
    33.7nC @ 10V
    14.9ns
    4.5V 10V
    ±20V
    5.1 ns
    23.6 ns
    19A
    2V
    20V
    0.0063Ohm
    60V
    750A
    1.05mm
    6.1mm
    5.1mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTMFS4823NT3G
    LAST SHIPMENTS (Last Updated: 5 days ago)
    -
    -
    Surface Mount
    8-PowerTDFN, 5 Leads
    5
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    1
    -
    860mW Ta 32.5W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    -
    N-Channel
    10.6m Ω @ 30A, 10V
    2.5V @ 250μA
    795pF @ 15V
    6.9A Ta 30A Tc
    13nC @ 11.5V
    29ns
    4.5V 11.5V
    ±20V
    3.8 ns
    12.7 ns
    30A
    -
    16V
    0.018Ohm
    30V
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    YES
    FET General Purpose Power
    5
    Not Qualified
    5.43W
    SWITCHING
    6.9A
    -
    -
  • NTMFS4846NT3G
    LAST SHIPMENTS (Last Updated: 21 hours ago)
    -
    -
    Surface Mount
    8-PowerTDFN, 5 Leads
    5
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    1
    -
    890mW Ta 55.5W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    -
    N-Channel
    3.4m Ω @ 30A, 10V
    2.5V @ 250μA
    3250pF @ 12V
    12.7A Ta 100A Tc
    53nC @ 11.5V
    18.9ns
    4.5V 11.5V
    ±20V
    7.1 ns
    34.2 ns
    20.3A
    -
    16V
    -
    30V
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    YES
    FET General Purpose Power
    5
    Not Qualified
    5.9W
    SWITCHING
    100A
    -
    -
  • NTMFS4836NT1G
    -
    -
    -
    Surface Mount
    8-PowerTDFN, 5 Leads
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    890mW Ta 55.6W Tc
    -
    -
    -
    -
    N-Channel
    4mOhm @ 30A, 10V
    2.5V @ 250μA
    2.677pF @ 12V
    11A Ta 90A Tc
    28nC @ 4.5V
    -
    4.5V 11.5V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    5-DFN (5x6) (8-SOFL)
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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