ON Semiconductor NTMFS5C646NLT1G
- Part Number:
- NTMFS5C646NLT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2484956-NTMFS5C646NLT1G
- Description:
- MOSFET N-CH 60V 32A SO-8FL
- Datasheet:
- NTMFS5C646NLT1G
ON Semiconductor NTMFS5C646NLT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMFS5C646NLT1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3.7W Ta 79W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time10.4 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs4.7m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2164pF @ 25V
- Current - Continuous Drain (Id) @ 25°C19A Ta
- Gate Charge (Qg) (Max) @ Vgs33.7nC @ 10V
- Rise Time14.9ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)5.1 ns
- Turn-Off Delay Time23.6 ns
- Continuous Drain Current (ID)19A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0063Ohm
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)750A
- Height1.05mm
- Length6.1mm
- Width5.1mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTMFS5C646NLT1G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2164pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 19A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23.6 ns.Peak drain current is 750A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NTMFS5C646NLT1G Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23.6 ns
based on its rated peak drain current 750A.
a threshold voltage of 2V
NTMFS5C646NLT1G Applications
There are a lot of ON Semiconductor
NTMFS5C646NLT1G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2164pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 19A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23.6 ns.Peak drain current is 750A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.4 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NTMFS5C646NLT1G Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 23.6 ns
based on its rated peak drain current 750A.
a threshold voltage of 2V
NTMFS5C646NLT1G Applications
There are a lot of ON Semiconductor
NTMFS5C646NLT1G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
NTMFS5C646NLT1G More Descriptions
ON SEMICONDUCTOR NTMFS5C646NLT1GMOSFET Transistor, N Channel, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V
NTMFS5C646NLT1G N-channel MOSFET Transistor, 89 A, 60 V, 8-Pin SO-8FL | ON Semiconductor NTMFS5C646NLT1G
NFET SO8FL 60V 92A 4.5MOH; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Diss
NTMFS5C646NLT1G N-channel MOSFET Transistor, 89 A, 60 V, 8-Pin SO-8FL | ON Semiconductor NTMFS5C646NLT1G
NFET SO8FL 60V 92A 4.5MOH; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Diss
The three parts on the right have similar specifications to NTMFS5C646NLT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountSubcategoryPin CountQualification StatusPower DissipationTransistor ApplicationDrain Current-Max (Abs) (ID)Supplier Device PackageDrain to Source Voltage (Vdss)View Compare
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NTMFS5C646NLT1GACTIVE (Last Updated: 1 day ago)16 WeeksSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~175°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)5EAR99Tin (Sn)MOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-F5113.7W Ta 79W TcSingleENHANCEMENT MODEDRAIN10.4 nsN-Channel4.7m Ω @ 50A, 10V2V @ 250μA2164pF @ 25V19A Ta33.7nC @ 10V14.9ns4.5V 10V±20V5.1 ns23.6 ns19A2V20V0.0063Ohm60V750A1.05mm6.1mm5.1mmNo SVHCROHS3 CompliantLead Free----------
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LAST SHIPMENTS (Last Updated: 5 days ago)--Surface Mount8-PowerTDFN, 5 Leads5SILICON-55°C~150°C TJTape & Reel (TR)2009e3yesObsolete1 (Unlimited)5EAR99Tin (Sn)MOSFET (Metal Oxide)DUALFLATNOT SPECIFIED-NOT SPECIFIED-1-860mW Ta 32.5W TcSingleENHANCEMENT MODEDRAIN-N-Channel10.6m Ω @ 30A, 10V2.5V @ 250μA795pF @ 15V6.9A Ta 30A Tc13nC @ 11.5V29ns4.5V 11.5V±20V3.8 ns12.7 ns30A-16V0.018Ohm30V-----RoHS CompliantLead FreeYESFET General Purpose Power5Not Qualified5.43WSWITCHING6.9A--
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LAST SHIPMENTS (Last Updated: 21 hours ago)--Surface Mount8-PowerTDFN, 5 Leads5SILICON-55°C~150°C TJTape & Reel (TR)2009e3yesObsolete1 (Unlimited)5EAR99Tin (Sn)MOSFET (Metal Oxide)DUALFLATNOT SPECIFIED-NOT SPECIFIED-1-890mW Ta 55.5W TcSingleENHANCEMENT MODEDRAIN-N-Channel3.4m Ω @ 30A, 10V2.5V @ 250μA3250pF @ 12V12.7A Ta 100A Tc53nC @ 11.5V18.9ns4.5V 11.5V±20V7.1 ns34.2 ns20.3A-16V-30V-----RoHS CompliantLead FreeYESFET General Purpose Power5Not Qualified5.9WSWITCHING100A--
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---Surface Mount8-PowerTDFN, 5 Leads---55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--------890mW Ta 55.6W Tc----N-Channel4mOhm @ 30A, 10V2.5V @ 250μA2.677pF @ 12V11A Ta 90A Tc28nC @ 4.5V-4.5V 11.5V±20V------------ROHS3 Compliant--------5-DFN (5x6) (8-SOFL)30V
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