ON Semiconductor NTMFS4H01NT1G

Name: NTMFS4H01NT1G
Brand: ON Semiconductor
SKU: 2850617-NTMFS4H01NT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTMFS4H01NT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2850617-NTMFS4H01NT1G

Description:: MOSFET N-CH 25V 54A SO8FL

ECAD Model:

Datasheet:: NTMFS4H01NT1G

Specifications

ON Semiconductor NTMFS4H01NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMFS4H01NT1G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
36 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Single
Power Dissipation-Max
3.2W Ta 125W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
0.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5693pF @ 12V
Current - Continuous Drain (Id) @ 25°C
54A Ta 334A Tc
Gate Charge (Qg) (Max) @ Vgs
85nC @ 10V
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
334A
Gate to Source Voltage (Vgs)
20V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NTMFS4H01NT1G Description
NTMFS4H01NT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor. Based on its low RDS(on), it is able to minimize conduction losses, and it is capable of minimizing driver losses on the basis of its low capacitance. Due to its superior quality and reliable performance, it is well suited for a wide range of applications, including DC-DC converters, system voltage rails, and more.

NTMFS4H01NT1G Features
Low RDS(on)
Low capacitance
Optimized gate charge
Low conduction losses
Available in the SO8-FL package

NTMFS4H01NT1G Applications
Netcom, telecom
System voltage rails
Servers & point of load
High-performance DC-DC converters

NTMFS4H01NT1G More Descriptions

Single N−Channel Power MOSFET 25V, 334A, 0.7mΩ
Nfet So8Fl 25V 334A 700Mo/Reel Rohs Compliant: Yes |Onsemi NTMFS4H01NT1G
Single N-Channel 25 V 0.97 mOhm 39 nC 3.2 W Silicon SMT Mosfet - DFN-5
MOSFET, N-CH, 25V, 334A, DFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 334A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 550µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 125W; Transistor Case Style: DFN; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Product Comparison

The three parts on the right have similar specifications to NTMFS4H01NT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Subcategory

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Configuration

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Number of Terminations

Terminal Finish

Terminal Position

Terminal Form

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Supplier Device Package

View Compare
NTMFS4H01NT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

36 Weeks

Tin

Surface Mount

Surface Mount

8-PowerTDFN

8

150°C TJ

Tape & Reel (TR)

2014

e3

yes

Active

1 (Unlimited)

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Single

3.2W Ta 125W Tc

N-Channel

0.7m Ω @ 30A, 10V

2.1V @ 250μA

5693pF @ 12V

54A Ta 334A Tc

85nC @ 10V

25V

4.5V 10V

±20V

334A

20V

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTMFS4897NFT3G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

-

-

Surface Mount

8-PowerTDFN, 5 Leads

5

-55°C~150°C TJ

Tape & Reel (TR)

2010

e3

yes

Obsolete

1 (Unlimited)

EAR99

-

MOSFET (Metal Oxide)

-

-

-

-

950mW Ta 96.2W Tc

N-Channel

2m Ω @ 22A, 10V

2.5V @ 1mA

5660pF @ 15V

17A Ta 171A Tc

83.6nC @ 10V

-

4.5V 10V

±20V

171A

20V

RoHS Compliant

Lead Free

YES

SILICON

5

Tin (Sn)

DUAL

FLAT

5

1

Single

ENHANCEMENT MODE

96.2W

DRAIN

26 ns

SWITCHING

24ns

13 ns

36 ns

0.003Ohm

30V

288A

2 V

1.1mm

5.1mm

6.1mm

No SVHC

No

-

NTMFS4H01NT1G vs NTMFS4897NFT3G
NTMFS4898NFT3G

ON Semiconductor

-

-

-

-

Surface Mount

8-PowerTDFN, 5 Leads

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

930mW Ta 73.5W Tc

N-Channel

3mOhm @ 30A, 10V

2.5V @ 1mA

3.233pF @ 12V

13.2A Ta 117A Tc

49.5nC @ 10V

30V

4.5V 10V

±20V

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

5-DFN (5x6) (8-SOFL)

NTMFS4H01NT1G vs NTMFS4898NFT3G
NTMFS4836NT1G

ON Semiconductor

-

-

-

-

Surface Mount

8-PowerTDFN, 5 Leads

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

890mW Ta 55.6W Tc

N-Channel

4mOhm @ 30A, 10V

2.5V @ 250μA

2.677pF @ 12V

11A Ta 90A Tc

28nC @ 4.5V

30V

4.5V 11.5V

±20V

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

5-DFN (5x6) (8-SOFL)

NTMFS4H01NT1G vs NTMFS4836NT1G