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NTMFS4C09NT1G

ON Semiconductor NTMFS4C09NT1G

Part Number:
NTMFS4C09NT1G
Manufacturer:
ON Semiconductor
Ventron No:
3586346-NTMFS4C09NT1G
Description:
MOSFET N-CH 30V 9A SO8FL
ECAD Model:
Datasheet:
NTMFS4C09NT1G

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Specifications
ON Semiconductor NTMFS4C09NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMFS4C09NT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    16 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Surface Mount
    YES
  • Number of Pins
    5
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    5
  • Power Dissipation-Max
    760mW Ta 25.5W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5.8m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1252pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    9A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    10.9nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    52A
  • Threshold Voltage
    2.1V
  • Gate to Source Voltage (Vgs)
    20V
  • Height
    1.05mm
  • Length
    6.1mm
  • Width
    5.1mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTMFS4C09NT1G Description
NTMFS4C09NT1G is an N-Channel power MOSFET from the manufacturer of ON Semiconductor with an operating temperature of -55°C~150°C TJ. It has 5 pins, each pin has its own function, and it is available in Tape & Reel (TR) packaging way. Input Capacitance (Ciss) (Max) @ Vds of NTMFS4C09NT1G is 1252pF @ 15V, Gate Charge (Qg) (Max) @ Vgs is 10.9nC @ 4.5V, and Drive Voltage (Max Rds On,Min Rds On) is 4.5V 10V.

NTMFS4C09NT1G  Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant

NTMFS4C09NT1G Applications
CPU Power Delivery
DC?DC Converters
NTMFS4C09NT1G More Descriptions
NTMFS4C09NT1G N-channel MOSFET Transistor; 52 A; 30 V; 8-Pin SO-8FL
Single N-Channel Power MOSFET 30V, 52A, 5.8mΩ
Trans MOSFET N-CH 30V 16.4A 5-Pin(4 Tab) SO-FL T/R / MOSFET N-CH 30V 9A SO8FL
N Channel Mosfet, 30V, Dfn-5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:52A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V; Product Range:-Rohs Compliant: Yes |Onsemi NTMFS4C09NT1G
Product Comparison
The three parts on the right have similar specifications to NTMFS4C09NT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Supplier Device Package
    Transistor Element Material
    Number of Terminations
    Terminal Position
    Terminal Form
    Number of Elements
    Operating Mode
    Power Dissipation
    Case Connection
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Radiation Hardening
    Qualification Status
    View Compare
  • NTMFS4C09NT1G
    NTMFS4C09NT1G
    ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    16 Weeks
    Surface Mount
    8-PowerTDFN
    YES
    5
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    5
    760mW Ta 25.5W Tc
    Single
    10 ns
    N-Channel
    5.8m Ω @ 30A, 10V
    2.1V @ 250μA
    1252pF @ 15V
    9A Ta
    10.9nC @ 4.5V
    30V
    4.5V 10V
    ±20V
    20 ns
    52A
    2.1V
    20V
    1.05mm
    6.1mm
    5.1mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTMFS4898NFT3G
    NTMFS4898NFT3G
    ON Semiconductor
    -
    -
    Surface Mount
    8-PowerTDFN, 5 Leads
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    930mW Ta 73.5W Tc
    -
    -
    N-Channel
    3mOhm @ 30A, 10V
    2.5V @ 1mA
    3.233pF @ 12V
    13.2A Ta 117A Tc
    49.5nC @ 10V
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    5-DFN (5x6) (8-SOFL)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NTMFS4C09NT1G vs NTMFS4898NFT3G
  • NTMFS4851NT1G
    NTMFS4851NT1G
    ON Semiconductor
    LIFETIME (Last Updated: 1 week ago)
    34 Weeks
    Surface Mount
    8-PowerTDFN, 5 Leads
    YES
    5
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    5
    870mW Ta 41.7W Tc
    Single
    14.4 ns
    N-Channel
    5.9m Ω @ 30A, 10V
    2.5V @ 250μA
    1850pF @ 12V
    9.5A Ta 66A Tc
    20nC @ 4.5V
    -
    4.5V 11.5V
    ±16V
    18.6 ns
    15A
    -
    16V
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    SILICON
    5
    DUAL
    FLAT
    1
    ENHANCEMENT MODE
    2.16W
    DRAIN
    SWITCHING
    39.8ns
    5.2 ns
    100A
    0.0087Ohm
    30V
    No
    -
    NTMFS4C09NT1G vs NTMFS4851NT1G
  • NTMFS4846NT3G
    NTMFS4846NT3G
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 21 hours ago)
    -
    Surface Mount
    8-PowerTDFN, 5 Leads
    YES
    5
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    NOT SPECIFIED
    5
    890mW Ta 55.5W Tc
    Single
    -
    N-Channel
    3.4m Ω @ 30A, 10V
    2.5V @ 250μA
    3250pF @ 12V
    12.7A Ta 100A Tc
    53nC @ 11.5V
    -
    4.5V 11.5V
    ±20V
    34.2 ns
    20.3A
    -
    16V
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    SILICON
    5
    DUAL
    FLAT
    1
    ENHANCEMENT MODE
    5.9W
    DRAIN
    SWITCHING
    18.9ns
    7.1 ns
    100A
    -
    30V
    -
    Not Qualified
    NTMFS4C09NT1G vs NTMFS4846NT3G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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