ON Semiconductor NTMFS4823NT1G
- Part Number:
- NTMFS4823NT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2485302-NTMFS4823NT1G
- Description:
- MOSFET N-CH 30V 6.9A SO-8FL
- Datasheet:
- NTMFS4823NT1G
ON Semiconductor NTMFS4823NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMFS4823NT1G.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN, 5 Leads
- Surface MountYES
- Number of Pins5
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance10.6MOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Pin Count5
- Number of Elements1
- Power Dissipation-Max860mW Ta 32.5W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation5.43W
- Case ConnectionDRAIN
- Turn On Delay Time10.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10.6m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds795pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6.9A Ta 30A Tc
- Gate Charge (Qg) (Max) @ Vgs13nC @ 11.5V
- Rise Time29ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Vgs (Max)±20V
- Fall Time (Typ)3.8 ns
- Turn-Off Delay Time12.7 ns
- Continuous Drain Current (ID)30A
- Threshold Voltage1.9V
- Gate to Source Voltage (Vgs)16V
- Drain Current-Max (Abs) (ID)6.9A
- Drain to Source Breakdown Voltage30V
- Height1.1mm
- Length5.1mm
- Width6.1mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTMFS4823NT1G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 795pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 6.9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 12.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.In this case, the threshold voltage of the transistor is 1.9V, which means that it will not activate any of its functions when its threshold voltage reaches 1.9V.Using drive voltage (4.5V 11.5V), this device contributes to a reduction in overall power consumption.
NTMFS4823NT1G Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12.7 ns
a threshold voltage of 1.9V
NTMFS4823NT1G Applications
There are a lot of ON Semiconductor
NTMFS4823NT1G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 795pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 6.9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 12.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.In this case, the threshold voltage of the transistor is 1.9V, which means that it will not activate any of its functions when its threshold voltage reaches 1.9V.Using drive voltage (4.5V 11.5V), this device contributes to a reduction in overall power consumption.
NTMFS4823NT1G Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12.7 ns
a threshold voltage of 1.9V
NTMFS4823NT1G Applications
There are a lot of ON Semiconductor
NTMFS4823NT1G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
NTMFS4823NT1G More Descriptions
N-Channel 30 V 10.6 mOhm 860 mW Surface Mount Power MOSFET - SOIC-8
Single N-Channel Power MOSFET 30V, 30A, 10.5mΩ
NTMFS4823NT1G N-channel MOSFET Transistor, 30 A, 30 V, 8-Pin PowerPAK SO | ON Semiconductor NTMFS4823NT1G
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V Rohs Compliant: Yes
Single N-Channel Power MOSFET 30V, 30A, 10.5mΩ
NTMFS4823NT1G N-channel MOSFET Transistor, 30 A, 30 V, 8-Pin PowerPAK SO | ON Semiconductor NTMFS4823NT1G
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V Rohs Compliant: Yes
The three parts on the right have similar specifications to NTMFS4823NT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Nominal VgsSupplier Device PackageDrain to Source Voltage (Vdss)View Compare
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NTMFS4823NT1GACTIVE (Last Updated: 5 days ago)2 WeeksSurface Mount8-PowerTDFN, 5 LeadsYES5SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)5EAR9910.6MOhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT51860mW Ta 32.5W TcSingleENHANCEMENT MODE5.43WDRAIN10.8 nsN-ChannelSWITCHING10.6m Ω @ 30A, 10V2.5V @ 250μA795pF @ 15V6.9A Ta 30A Tc13nC @ 11.5V29ns4.5V 11.5V±20V3.8 ns12.7 ns30A1.9V16V6.9A30V1.1mm5.1mm6.1mmNo SVHCNoROHS3 CompliantLead Free------
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LAST SHIPMENTS (Last Updated: 1 week ago)-Surface Mount8-PowerTDFN, 5 LeadsYES5SILICON-55°C~150°C TJTape & Reel (TR)2010e3yesObsolete1 (Unlimited)5EAR99-Tin (Sn)-MOSFET (Metal Oxide)DUALFLAT51950mW Ta 96.2W TcSingleENHANCEMENT MODE96.2WDRAIN26 nsN-ChannelSWITCHING2m Ω @ 22A, 10V2.5V @ 1mA5660pF @ 15V17A Ta 171A Tc83.6nC @ 10V24ns4.5V 10V±20V13 ns36 ns171A-20V-30V1.1mm5.1mm6.1mmNo SVHCNoRoHS CompliantLead Free0.003Ohm288A2 V--
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LIFETIME (Last Updated: 1 week ago)34 WeeksSurface Mount8-PowerTDFN, 5 LeadsYES5SILICON-55°C~150°C TJTape & Reel (TR)2009e3yesObsolete1 (Unlimited)5EAR99-Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT51870mW Ta 41.7W TcSingleENHANCEMENT MODE2.16WDRAIN14.4 nsN-ChannelSWITCHING5.9m Ω @ 30A, 10V2.5V @ 250μA1850pF @ 12V9.5A Ta 66A Tc20nC @ 4.5V39.8ns4.5V 11.5V±16V5.2 ns18.6 ns15A-16V100A30V----NoRoHS CompliantLead Free0.0087Ohm----
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--Surface Mount8-PowerTDFN, 5 Leads----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----900mW Ta-----N-Channel-4.5mOhm @ 26A, 10V2.5V @ 250μA3.6pF @ 24V11A Ta50nC @ 4.5V-4.5V 10V±20V------------ROHS3 Compliant----5-DFN (5x6) (8-SOFL)30V
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