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NTJD5121NT2G

ON Semiconductor NTJD5121NT2G

Part Number:
NTJD5121NT2G
Manufacturer:
ON Semiconductor
Ventron No:
2473427-NTJD5121NT2G
Description:
MOSFET 2N-CH 60V 0.295A SOT363
ECAD Model:
Datasheet:
NTJD5121NT2G

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Specifications
ON Semiconductor NTJD5121NT2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTJD5121NT2G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOW THRESHOLD
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    250mW
  • Terminal Form
    GULL WING
  • Base Part Number
    NTJD5121N
  • Pin Count
    6
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    250mW
  • Turn On Delay Time
    22 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.6 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    26pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    0.9nC @ 4.5V
  • Rise Time
    34ns
  • Drain to Source Voltage (Vdss)
    60V
  • Fall Time (Typ)
    32 ns
  • Turn-Off Delay Time
    34 ns
  • Continuous Drain Current (ID)
    295mA
  • Threshold Voltage
    1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1mm
  • Length
    2.2mm
  • Width
    1.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTJD5121NT2G    Description
  The device is designed to provide the lowest possible on-resistance and gate charge in the smallest configuration and has good thermal characteristics in ultra-low shape. Low resistance, small footprint and low shape make the device an ideal choice for battery-powered applications with limited space.
NTJD5121NT2G      FEATURES
Dual P-ChMOSFETs Common Source Configuration Small Footprint 1mm*1.5mm Gate-Source Voltage Clamp Gate ESD Protection-3kV Pb Free ·RoHS Compliant Halogen Free   NTJD5121NT2G     APPLICATIONS
Battery Management Load Switch Battery Protection      



NTJD5121NT2G More Descriptions
Transistor MOSFET Array Dual N-CH 60V 295mA 6-Pin SC-88 T/R - Tape and Reel
Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω
NTJD5121NT2G Dual N-channel MOSFET Transistor, 0.29 A, 60 V, 6-Pin SC-88 | ON Semiconductor NTJD5121NT2G
MOSFET, DUAL N-CH, 60V, 0.295A, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:295mA; Source Voltage Vds:60V; On
MOSFET, DUAL N-CH, 60V, 0.295A, SOT-363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 295mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 250mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to NTJD5121NT2G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Form
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Resistance
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Polarity/Channel Type
    Mount
    Voltage - Rated DC
    Reach Compliance Code
    Qualification Status
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Feedback Cap-Max (Crss)
    View Compare
  • NTJD5121NT2G
    NTJD5121NT2G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    LOW THRESHOLD
    FET General Purpose Power
    250mW
    GULL WING
    NTJD5121N
    6
    2
    Dual
    ENHANCEMENT MODE
    250mW
    22 ns
    2 N-Channel (Dual)
    SWITCHING
    1.6 Ω @ 500mA, 10V
    2.5V @ 250μA
    26pF @ 20V
    0.9nC @ 4.5V
    34ns
    60V
    32 ns
    34 ns
    295mA
    1.7V
    20V
    60V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1mm
    2.2mm
    1.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTJD1155LT1G
    NTJD1155LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 20 hours ago)
    15 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2004
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    -
    Other Transistors
    400mW
    GULL WING
    NTJD1155
    6
    2
    Dual
    ENHANCEMENT MODE
    400mW
    -
    N and P-Channel
    SWITCHING
    175m Ω @ 1.2A, 4.5V
    1V @ 250μA
    -
    -
    -
    8V
    -
    -
    1.3A
    1V
    1V
    -8V
    METAL-OXIDE SEMICONDUCTOR
    Standard
    1mm
    2.2mm
    1.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    130mOhm
    260
    630mA
    40
    N-CHANNEL AND P-CHANNEL
    -
    -
    -
    -
    -
    -
    -
    NTJD5121NT2G vs NTJD1155LT1G
  • NTJD2152PT2G
    NTJD2152PT2G
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 3 days ago)
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    -
    Other Transistors
    270mW
    GULL WING
    NTJD2152P
    6
    2
    Dual
    ENHANCEMENT MODE
    270mW
    -
    2 P-Channel (Dual)
    SWITCHING
    300m Ω @ 570mA, 4.5V
    1V @ 250μA
    225pF @ 8V
    4nC @ 4.5V
    23ns
    -
    23 ns
    50 ns
    775mA
    -
    8V
    -8V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    260
    -775mA
    40
    -
    Surface Mount
    -8V
    unknown
    Not Qualified
    0.775A
    0.3Ohm
    40 pF
    NTJD5121NT2G vs NTJD2152PT2G
  • NTJD4401NT4G
    NTJD4401NT4G
    ON Semiconductor
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    -
    FET General Purpose Power
    270mW
    GULL WING
    NTJD4401N
    6
    2
    Dual
    ENHANCEMENT MODE
    270mW
    -
    2 N-Channel (Dual)
    SWITCHING
    375m Ω @ 630mA, 4.5V
    1.5V @ 250μA
    46pF @ 20V
    3nC @ 4.5V
    227ns
    -
    227 ns
    786 ns
    630mA
    -
    12V
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    260
    775mA
    40
    -
    Surface Mount
    20V
    -
    Not Qualified
    -
    0.375Ohm
    5 pF
    NTJD5121NT2G vs NTJD4401NT4G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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