ON Semiconductor NTJD1155LT1
- Part Number:
- NTJD1155LT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2848427-NTJD1155LT1
- Description:
- MOSFET N/P-CH 8V 1.3A SOT-363
- Datasheet:
- NTJD1155LT1
ON Semiconductor NTJD1155LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTJD1155LT1.
- Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn80Pb20)
- SubcategoryOther Transistors
- Voltage - Rated DC-8V
- Max Power Dissipation400mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-1.3A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberNTJD1155
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation400mW
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs175m Ω @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Drain to Source Voltage (Vdss)8V
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Continuous Drain Current (ID)1.3A
- Gate to Source Voltage (Vgs)1V
- Drain-source On Resistance-Max0.175Ohm
- Drain to Source Breakdown Voltage-8V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NTJD1155LT1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTJD1155LT1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTJD1155LT1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTJD1155LT1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTJD1155LT1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NTJD1155LT1 More Descriptions
Dual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ
MOSFETs- Power and Small Signal 8V /-1.3A P-Channel No-Cancel/No-Return
Small Signal Field-Effect Transistor, 1.3A I(D), 8V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs- Power and Small Signal 8V /-1.3A P-Channel No-Cancel/No-Return
Small Signal Field-Effect Transistor, 1.3A I(D), 8V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to NTJD1155LT1.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Polarity/Channel TypeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageFET TechnologyFET FeatureRoHS StatusLead FreeMountJESD-30 CodeInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeDrain Current-Max (Abs) (ID)Feedback Cap-Max (Crss)View Compare
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NTJD1155LT1OBSOLETE (Last Updated: 2 weeks ago)Surface Mount6-TSSOP, SC-88, SOT-363YES6SILICON-55°C~150°C TJTape & Reel (TR)2009e0noObsolete1 (Unlimited)6EAR99Tin/Lead (Sn80Pb20)Other Transistors-8V400mWGULL WING240not_compliant-1.3A30NTJD11556Not Qualified2DualENHANCEMENT MODE400mWN and P-ChannelSWITCHING175m Ω @ 1.2A, 4.5V1V @ 250μA8VN-CHANNEL AND P-CHANNEL1.3A1V0.175Ohm-8VMETAL-OXIDE SEMICONDUCTORStandardNon-RoHS CompliantContains Lead----------
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-Surface Mount6-TSSOP, SC-88, SOT-363--SILICON-55°C~150°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)6EAR99Tin (Sn)Other Transistors-8V270mWGULL WING260--775mANOT SPECIFIEDNTJD2152P6Not Qualified2DualENHANCEMENT MODE270mW2 P-Channel (Dual)SWITCHING300m Ω @ 570mA, 4.5V1V @ 250μA--775mA8V0.3Ohm-8VMETAL-OXIDE SEMICONDUCTORLogic Level GateRoHS CompliantLead FreeSurface MountR-PDSO-G6225pF @ 8V4nC @ 4.5V23ns23 ns50 ns0.775A40 pF
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LAST SHIPMENTS (Last Updated: 3 days ago)Surface Mount6-TSSOP, SC-88, SOT-363-6SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)6EAR99Tin (Sn)Other Transistors-8V270mWGULL WING260unknown-775mA40NTJD2152P6Not Qualified2DualENHANCEMENT MODE270mW2 P-Channel (Dual)SWITCHING300m Ω @ 570mA, 4.5V1V @ 250μA--775mA8V0.3Ohm-8VMETAL-OXIDE SEMICONDUCTORLogic Level GateRoHS CompliantLead FreeSurface Mount-225pF @ 8V4nC @ 4.5V23ns23 ns50 ns0.775A40 pF
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-Surface Mount6-TSSOP, SC-88, SOT-363-6SILICON-55°C~150°C TJTape & Reel (TR)2008e3-Obsolete1 (Unlimited)6EAR99Tin (Sn)FET General Purpose Power20V270mWGULL WING260-775mA40NTJD4401N6Not Qualified2DualENHANCEMENT MODE270mW2 N-Channel (Dual)SWITCHING375m Ω @ 630mA, 4.5V1.5V @ 250μA--630mA12V0.375Ohm20VMETAL-OXIDE SEMICONDUCTORLogic Level GateRoHS CompliantLead FreeSurface Mount-46pF @ 20V3nC @ 4.5V227ns227 ns786 ns-5 pF
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