NTJD1155LT1

ON Semiconductor NTJD1155LT1

Part Number:
NTJD1155LT1
Manufacturer:
ON Semiconductor
Ventron No:
2848427-NTJD1155LT1
Description:
MOSFET N/P-CH 8V 1.3A SOT-363
ECAD Model:
Datasheet:
NTJD1155LT1

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Specifications
ON Semiconductor NTJD1155LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTJD1155LT1.
  • Lifecycle Status
    OBSOLETE (Last Updated: 2 weeks ago)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn80Pb20)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -8V
  • Max Power Dissipation
    400mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -1.3A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    NTJD1155
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    400mW
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    175m Ω @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Drain to Source Voltage (Vdss)
    8V
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Continuous Drain Current (ID)
    1.3A
  • Gate to Source Voltage (Vgs)
    1V
  • Drain-source On Resistance-Max
    0.175Ohm
  • Drain to Source Breakdown Voltage
    -8V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
NTJD1155LT1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTJD1155LT1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTJD1155LT1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NTJD1155LT1 More Descriptions
Dual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ
MOSFETs- Power and Small Signal 8V /-1.3A P-Channel No-Cancel/No-Return
Small Signal Field-Effect Transistor, 1.3A I(D), 8V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to NTJD1155LT1.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    RoHS Status
    Lead Free
    Mount
    JESD-30 Code
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Drain Current-Max (Abs) (ID)
    Feedback Cap-Max (Crss)
    View Compare
  • NTJD1155LT1
    NTJD1155LT1
    OBSOLETE (Last Updated: 2 weeks ago)
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e0
    no
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin/Lead (Sn80Pb20)
    Other Transistors
    -8V
    400mW
    GULL WING
    240
    not_compliant
    -1.3A
    30
    NTJD1155
    6
    Not Qualified
    2
    Dual
    ENHANCEMENT MODE
    400mW
    N and P-Channel
    SWITCHING
    175m Ω @ 1.2A, 4.5V
    1V @ 250μA
    8V
    N-CHANNEL AND P-CHANNEL
    1.3A
    1V
    0.175Ohm
    -8V
    METAL-OXIDE SEMICONDUCTOR
    Standard
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTJD2152PT4G
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    Other Transistors
    -8V
    270mW
    GULL WING
    260
    -
    -775mA
    NOT SPECIFIED
    NTJD2152P
    6
    Not Qualified
    2
    Dual
    ENHANCEMENT MODE
    270mW
    2 P-Channel (Dual)
    SWITCHING
    300m Ω @ 570mA, 4.5V
    1V @ 250μA
    -
    -
    775mA
    8V
    0.3Ohm
    -8V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    RoHS Compliant
    Lead Free
    Surface Mount
    R-PDSO-G6
    225pF @ 8V
    4nC @ 4.5V
    23ns
    23 ns
    50 ns
    0.775A
    40 pF
  • NTJD2152PT2G
    LAST SHIPMENTS (Last Updated: 3 days ago)
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    Other Transistors
    -8V
    270mW
    GULL WING
    260
    unknown
    -775mA
    40
    NTJD2152P
    6
    Not Qualified
    2
    Dual
    ENHANCEMENT MODE
    270mW
    2 P-Channel (Dual)
    SWITCHING
    300m Ω @ 570mA, 4.5V
    1V @ 250μA
    -
    -
    775mA
    8V
    0.3Ohm
    -8V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    RoHS Compliant
    Lead Free
    Surface Mount
    -
    225pF @ 8V
    4nC @ 4.5V
    23ns
    23 ns
    50 ns
    0.775A
    40 pF
  • NTJD4401NT4G
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    FET General Purpose Power
    20V
    270mW
    GULL WING
    260
    -
    775mA
    40
    NTJD4401N
    6
    Not Qualified
    2
    Dual
    ENHANCEMENT MODE
    270mW
    2 N-Channel (Dual)
    SWITCHING
    375m Ω @ 630mA, 4.5V
    1.5V @ 250μA
    -
    -
    630mA
    12V
    0.375Ohm
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    RoHS Compliant
    Lead Free
    Surface Mount
    -
    46pF @ 20V
    3nC @ 4.5V
    227ns
    227 ns
    786 ns
    -
    5 pF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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